SNA-386 Product Description DC-3 GHz, Cascadable GaAs MMIC Amplifier Sirenza Microdevices SNA-386 is a GaAs monolithic broadband amplifier (MMIC) housed in a low-cost surfacemountable plastic package. At 1950 MHz. this amplifier provides 20dB of gain when biased at 35mA. The use of an external resistor allows for bias flexibility and stability. These unconditionally stable amplifiers are designed for use as general purpose 50 ohm gain blocks. Also available in chip form (SNA-300), its small size (0.3mm x 0.3mm) and gold metallization make it an ideal choice for use in hybrid circuits. Output Power vs. Frequency 16 14 dBm Applications PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 12 10 8 0.1 0.5 1 1.5 2 2.5 3 3.5 4 GHz Sy mbol Product Features Patented GaAs HBT Technology Cascadable 50 Ohm Gain Block 21dB Gain, +23dBm TOIP Operates From Single Supply Low Cost Surface Mount Plastic Package Parameter Units Frequency Min. Ty p. 19.0 21.0 20.0 19.5 GP Small Signal Pow er Gain dB dB dB 850 M Hz 1950 M Hz 2400 M Hz GF Gain Flatness dB 0.1-3 GHz BW3dB Max. +/- 1.5 3.0 3dB Bandw idth GHz P1dB Output Pow er at 1dB Compression dBm 1950 M Hz 10.0 OIP3 Output Third Order Intercept Point dBm 1950 M Hz 23.0 NF Noise Figure dB 1950 M Hz 4.0 VSWR Input / Output - 0.1-3 GHz 1.5:1 Reverse Isolation dB 0.1-3 GHz 22.0 VD Device Operating Voltage V 3.2 3.7 4.1 ID Device Operating Current mA 30 35 40 ISOL dG/dT Device Gain Temperature Coefficient dB/°C -0.003 RTH, j-l Thermal Resistance (junction to lead) °C/W 330 Test Conditions: VS = 8 V RBIAS = 120 Ohms ID = 35 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102434 Rev A Preliminary SNA-386 DC-3 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 3.7V, Ids = 35mA) |S21| vs. Frequency |S11| vs. Frequency dB 0 23 -10 21 dB -20 19 17 -30 15 -40 0.1 0.5 1 1.5 2 2.5 0.1 3 0.5 1 GHz 1.5 2 2.5 3 GHz |S22| vs. Frequency |S12| vs. Frequency 0 0 -5 -10 -10 dB dB -15 -20 -20 -30 -25 -30 -40 0.1 0.5 1 1.5 2 2.5 3 0.1 0.5 1 Noise Figure vs. Frequency dB 1.5 2 2.5 3 2.5 3 GHz GHz TOIP vs. Frequency 5 30 4.5 28 dBm 4 3.5 26 24 22 3 20 0.1 0.5 1.0 1.5 2 2.5 3 0.1 GHz 0.5 1 1.5 2 GHz Absolute Maximum Ratings Parameter Absolute Limit Max. Device Current (ID) 70 mA Max. Device Voltage (VD) 6V Max. RF Input Pow er +10 dBm Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the follow ing expression: IDVD < (TJ - TL) / RTH, j-l 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102434 Rev A Preliminary SNA-386 DC-3 GHz Cascadable MMIC Amplifier Application Circuit Element Values Typical Application Circuit R BIAS 1 uF LC 1 RF in 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD 1000 pF 4 SNA-386 Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID 3 RF out CB 2 CB Frequency (Mhz) Reference Designator Supply Voltage(VS) 5V RBIAS 36 6V 68 8V 120 10 V 180 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS 1000 pF LC Mounting Instructions CD S3 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an S3 designator on the top surface of the package. 3 4 S3 2 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. For optimum RF performance, use via holes as close to ground leads as possible to reduce lead inductance. 3 1 Description RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. 522 Almanor Ave., Sunnyvale, CA 94085 Part Number Reel Size Devices/Reel SNA-386-TR1 7" 1000 SNA-386-TR2 13" 3000 SNA-386-TR3 13" 5000 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102434 Rev A Preliminary SNA-386 DC-3 GHz Cascadable MMIC Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102434 Rev A