Product Description Stanford Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional RF choke are required for operation. 0 -10 Gain (dB) IRL -20 16 ORL -30 12 Return Loss (dB) GAIN 20 -40 8 0 1 2 3 4 Frequency (GHz) Sy mbol 5 DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features High Gain : 18.6 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology Gain & Return Loss vs. Freq. @T L=+25°C 24 NGA-586 6 Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Units Frequency Min. Ty p. Max. dB dB dB 850 M Hz 1950 M Hz 2400 M Hz 17.8 19.8 18.6 17.9 21.8 Output Pow er at 1dB Compression dBm dBm 850 M Hz 1950 M Hz 18.9 18.5 Output Third Order Intercept Point (Pow er out per tone = 0dBm) dBm dBm 850 M Hz 1950 M Hz 39.6 34.0 Bandw idth Determined by Return Loss (<-10dB) M Hz G P1dB OIP3 IRL Parameter Operates From Single Supply Low Thermal Resistance Package Small Signal Gain 5500 Input Return Loss dB 1950 M Hz 14.9 Output Return Loss dB 1950 M Hz 19.5 NF Noise Figure dB 1950 M Hz 3.5 VD Device Voltage V RTh Thermal Resistance ORL Test Conditions: VS = 8v RBIAS = 39 Ohms °C/W ID = 80mA Typ. TL = 25ºC 4.5 4.9 5.4 121 IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol G Parameter Unit 100 500 850 1950 2400 3500 dB 20.5 20.1 19.8 18.6 17.9 15.5 Small Signal Gain OIP3 Output Third Order Intercept Point dBm 37.7 38.6 39.6 34.0 32.0 27.4 P1dB Output Pow er at 1dB Compression dBm 20.1 19.0 18.9 18.5 17.9 13.7 IRL Input Return Loss dB 29.3 21.3 17.7 14.9 15.4 15.8 ORL Output Return Loss dB 35.9 33.8 28.7 19.5 19.6 25 S21 Reverse Isolation dB 22.7 22.7 22.6 22.1 21.9 21.1 NF Noise Figure dB 3.7 3.5 3.4 3.5 3.5 3.6 VS = 8 V RBIAS = 39 Ohms Test Conditions: ID = 80 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure vs. Frequency Absolute Maximum Ratings Noise Figure (dB) VD= 4.9 V, ID= 80 mA 5.0 Parameter Absolute Limit 4.5 Max. Device Current (ID) 120 mA TL=+25ºC 4.0 Max. Device Voltage (VD) 6V Max. RF Input Pow er +15 dBm 3.5 Max. Junction Temp. (TJ) +150°C 3.0 Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C 2.5 Operation of this device beyond any one of these limits may cause permanent damage. 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth Frequency (GHz) OIP3 vs. Frequency P1dB vs. Frequency VD= 4.9 V, ID= 80 mA VD= 4.9 v, ID= 80 mA 22 45 35 30 25 +25°C -40°C +85°C TL 20 P1dB (dBm) OIP3 (dBm) +25°C -40°C +85°C TL 40 18 16 14 12 20 10 15 0 0.5 1 1.5 2 2.5 3 3.5 726 Palomar Ave., Sunnyvale, CA 94085 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Frequency (GHz) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier S21 vs. Frequency 25 VD= 4.9 v, ID= 80 mA 0 +25°C -40°C +85°C TL -5 +25°C -40°C +85°C TL -10 S11(dB) 20 S21(dB) S11 vs. Frequency VD= 4.9 v, ID= 80 mA 15 -15 -20 10 -25 -30 5 0 1 2 3 4 Frequency (GHz) 5 0 6 1 S12 vs. Frequency TL 6 5 6 VD= 4.9 v, ID= 80 mA -5 +25°C -40°C +85°C TL -10 +25°C -40°C +85°C -15 -19 S22(dB) S12(dB) -17 5 S22 vs. Frequency VD= 4.9 v, ID= 80 mA -15 2 3 4 Frequency (GHz) -21 -20 -25 -23 -30 -25 -35 0 1 2 3 4 Frequency (GHz) 5 6 0 VD vs. ID over Temperature for fixed VS= 8 v, RBIAS= 39 ohms * 2 3 4 Frequency (GHz) VD vs. Temperature for Constant ID = 80 mA 95 5.3 90 5.1 VD(Volts) +85°C 85 ID(mA) 1 +25°C 80 -40°C 75 4.9 4.7 4.5 70 4.3 65 4.6 4.7 4.8 4.9 VD(Volts) 5.0 5.1 -40 -15 10 35 Temperature(°C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier NGA-586 Basic Application Circuit Application Circuit Element Values R BIAS VS 1 uF 1000 pF 500 850 1950 2400 3500 CB 220 pF 100 pF 68 pF 56 pF 39 pF CD 100 pF 68 pF 22 pF 22 pF 15 pF LC 68 nH 33 nH 22 nH 18 nH 15 nH CD LC 1 RF in 4 NGA-586 3 RF out CB 2 CB Frequency (Mhz) Reference Designator Recommended Bias Resistor Values for ID=80mA Supply Voltage(VS) RBIAS 33 8V 39 10V 62 12V 91 Note: RBIAS provides DC bias stability over temperature. VS 1 uF RBIAS 1000 pF LC N5 CB 7.5V CD Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Part Identification Marking The part will be marked with an N5 designator on the top surface of the package. 3 4 N5 Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. 1 For package dimensions, refer to outline drawing at www.stanfordmicro.com Caution: ESD sensitive 4 GND Sames as Pin 2 Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 Description Part Number Reel Size Devices/Reel NGA-586 7" 1000 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101105 Rev. D