ISP814X, ISP824X, ISP844X ISP814, ISP824, ISP844 HIGH DENSITY A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 ISP814X ISP814 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 approval pending l ISP814X - Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969 ISP824X, ISP844X - EN60950 pending DESCRIPTION The ISP814, ISP824, ISP844 series of optically coupled isolators consist of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances OPTION SM 1 4 2 3 1.2 5.08 4.08 7.62 4.0 3.0 13° Max 0.5 3.0 0.26 0.5 ISP824X ISP824 3.35 2.54 7.0 6.0 1.2 10.16 9.16 10.46 9.86 1.25 0.75 3/11/99 7 3 4 6 5 7.62 13° Max 0.5 0.26 3.35 1 ISP844X ISP844 16 15 2 3 14 4 13 5 7.0 6.0 6 7 8 12 2.54 1.2 11 10 9 7.62 4.0 3.0 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 2 0.5 7.62 10.16 8 4.0 3.0 20.32 19.32 0.6 0.1 1 3.0 OPTION G SURFACE MOUNT Dimensions in mm 2.54 13° Max 0.5 3.0 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB91070M-AAS/ A1 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Power Dissipation ± 50mA 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) 1.2 Output Collector-emitter Breakdown (BVCEO) 1.4 TEST CONDITION V IF = ± 20mA V IC = 1mA 100 V nA IE = 100µA VCE = 20V 300 150 % % ± 1mAIF , 5V VCE 0.2 V ± 20mAIF , 1mAIC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) µs µs VCE = 2V , IC= 10mA, RL= 100Ω 35 ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) (Note 2) ISP814, ISP824, ISP844 ISP814A, ISP824A, ISP844A 6 20 50 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Note 1 Note 2 3/11/99 tr tf 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91070M-AAS/A1 Collector Power Dissipation vs. Ambient Temperature 100 50 0 -30 0 25 50 75 100 125 TA = 25°C Ic 5 8mA 6 5mA =1mA 2mA 3mA (V) 150 Collector-emitter saturation voltage V CE(SAT) 200 Collector power dissipation P C (mW) Collector-emitter Saturation Voltage vs. Forward Current 4 3 2 1 0 0 5 10 Forward current IF (±mA) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 60 TA = 25°C 50 Collector current I C (mA) Forward current I F (±mA) 50 40 30 20 10 0 ±50 ±30 40 ±20 30 ±15 20 ±10 10 IF = ±5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) (V) 4 6 8 10 Current Transfer Ratio vs. Forward Current 320 0.14 280 0.12 Current transfer ratio CTR (%) CE(SAT) Collector-emitter saturation voltage V 2 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature IF = ±20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 240 200 160 120 80 VCE = 5V TA = 25°C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 3/11/99 15 100 1 2 5 10 20 50 Forward current IF (±mA) DB91070M-AAS/A1