High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 9N140G IXBH 9N160G N-Channel, Enhancement Mode MOSFET compatible C VCES IC25 VCE(sat) tfi = = = = 1400/1600 V 9A 4.9 V typ. 70 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Preliminary Data Symbol Conditions Maximum Ratings 9N140G 9N160G VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1400 1600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C, 9 A IC90 TC = 90°C 5 A ICM TC = 25°C, 1 ms 10 A SSOA (RBSOA) VGE = 10 V, TVJ = 125°C, RG = 27 Ω VCE = 0.8•VCES Clamped inductive load, L = 100 µH ICM = 12 A PC TC = 25°C 100 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 1.15/10 Nm/lb.in. Weight 6 Symbol Conditions BVCES IC = 0.25 mA, VGE = 0 V VGE(th) IC = 0.5 mA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V g C = Collector, TAB = Collector Features • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage • Monolithic construction - high blocking voltage capability - very fast turn-off characteristics • International standard package JEDEC TO-247 AD • Reverse conducting capability C4 Applications • • • • Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies • CRT deflection • Lamp ballasts Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Advantages IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC 9N140G 9N160G 1400 1600 V V 3.5 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V V 100 µA mA ± 500 nA 7 V V 0.1 4.9 5.6 046 TJ = 125°C 5.5 • Easy to mount with 1 screw (isolated mounting screw hole) • Space savings • High power density © 2000 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1 -4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXBH 9N140G IXBH 9N160G Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg td(on) tri td(off) tfi IC = 5 A, VCE = 600 V, VGE = 10 V Inductive load, TJ = 125°° C IC = IC90, VGE = 10 V, L = 100 µH, VCE = 960 V, RG = 27 Ω 550 pF 36 pF 5 pF 34 nC 140 ns 200 ns 120 ns 70 ns 1.25 K/W RthJC RthCK 0.25 Reverse Conduction Symbol VF K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Conditions IF = IC90, VGE = 0 V min. typ. max. 3.6 5 TO-247 AD Outline Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 C D 15.75 16.26 0.610 0.640 3.55 3.65 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 C4 © 2000 IXYS All rights reserved 2 -4 IXBH 9N140G IXBH 9N160G 30 30 TJ = 25°C VGE = 17V TJ = 125°C 15V 13V 25 15V VGE = 17V 25 IC - Amperes IC - Amperes 11V 20 9V 15 10 7V 5 13V 11V 20 9V 15 10 7V 5 0 0 0 2 4 6 8 10 12 14 16 0 18 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 30 30 VCE = 20V 25 25 TJ = 25°C TJ = 125°C IF - Amperes IC - Amperes TJ = 25°C 20 15 10 TJ = 125°C 20 15 10 5 5 C4 0 0 4 6 8 10 12 0 14 2 VGE - Volts 4 6 8 10 VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 16 15 VCE = 600V IC = 5A 14 ICM - Amperes VGE - Volts 12 10 8 6 10 TJ = 125°C VCEK < VCES 5 IXBH 9N140G IXBH 9N160G 4 2 0 0 10 20 30 40 50 QG - nanocoulombs Fig. 5 Typ. Gate Charge characteristics © 2000 IXYS All rights reserved 0 0 400 800 1200 1600 VCE - Volts Fig. 6 Reverse Biased Safe Operating Area RBSOA 3 -4 IXBH 9N140G IXBH 9N160G 140 250 tfi - nanoseconds 120 td(off )- nanoseconds VCE = 960V VGE = 10V RG = 27Ω TJ = 125°C 100 80 60 40 VCE = 960V VGE = 10V IC = 5A TJ = 125°C 200 150 100 50 0 0 2 4 6 8 10 12 14 16 0 IC - Amperes 10 20 30 40 50 60 Rg - Ohms Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 10 ZthJC - K/W 1 0.1 Single Pulse 0.01 C4 0.001 0.00001 IXBH 9-140/160G 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4 -4