HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W D trr £ 250 ns Preliminary data sheet S Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM 34 136 34 A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns 600 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 2500 3000 V~ V~ miniBLOC, SOT-227 B E153432 S G S D G = Gate S = Source D = Drain Either Source terminal of miniBLOC can be used as Main or Kelvin Source TJ £ 150°C, RG = 2 W PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL£ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol VDSS VGS(th) 30 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 3 mA VDSS temperature coefficient 800 VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 3.0 5.0 V %/K ±200 nA 100 2 mA mA 0.24 W -0.214 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V %/K 0.096 VDS = VGS, ID = 8 mA VGS(th) temperature coefficient IGSS g Features · International standard packages · miniBLOC, with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls Advantages · Easy to mount · Space savings · High power density 98529D (6/99) 1-4 IXFN 34N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 20 35 S 7500 pF 920 pF 220 pF 45 ns 45 ns M4 screws (4x) supplied 100 ns Dim. 40 ns 270 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 60 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 140 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 K/W N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 K/W P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.15 RthJC 0.21 0.05 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 34 A Repetitive; pulse width limited by TJM 136 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 400 ns ns mC A trr IF = IS, -di/dt = 100 A/ms, VR = 100 V QRM IRM © 2000 IXYS All rights reserved Inches Min. Max. 31.50 7.80 0.22 RthCK Millimeter Min. Max. A B RthJC RthCK miniBLOC, SOT-227 B T J = 25°C TJ = 125°C T J = 25°C 1.4 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 34N80 40 40 ID - Amperes 32 VGS = 9V 8V 7V 6V TJ = 125OC 5V 32 ID - Amperes TJ = 25OC 24 16 4V 8 0 2 4 6 8 16 4V 8 10 0 4 8 Figure 1. Output Characteristics at 25OC RDS(ON) - Normalized RDS(ON) - Normalized 2.0 TJ = 125OC 1.8 1.6 1.4 1.2 TJ = 25OC 1.0 10 20 30 40 VGS = 10V 2.0 1.8 ID = 34A 1.6 ID =17A 1.4 1.2 1.0 25 50 50 ID - Amperes Figure 4. RDS(on) normalized to 0.5 ID25 value vs. ID 40 40 32 32 24 16 8 -50 75 100 0 25 50 75 100 125 150 T C - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 150 RDS(on) normalized to 0.5 ID25 value vs. TJ 24 TJ = 125oC 16 TJ = 25oC 8 -25 125 T J - Degrees C ID - Amperes ID - Amperes Figure 3. 0 20 2.2 VGS = 10V 0 16 Figure 2. Output Characteristics at 125OC 2.4 0.8 12 VDS - Volts VDS - Volts 2.2 5V 24 0 0 VGS = 9V 8V 7V 6V 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts Figure 6. Admittance Curves 3-4 IXFN 34N80 12 10000 8 Capacitance - pF 10 VGS - Volts C ISS V DS = 400V ID = 17A IG = 10mA 6 4 f = 1MHz C OSS 1000 C RSS 2 0 0 50 100 100 150 200 250 300 350 400 0 5 10 Gate Charge - nC 15 20 25 30 35 40 V DS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 80 100 0. 40 ID - Amperes ID - Amperes 60 TJ = 125 OC 20 10 1 10 25OOC C TTJJ == 25 1 D TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 10 V SD - Volts 1 00 1 000 V DS - Volts Figure 8. Forward Voltage Drop of the Intrinsic Diode R(th)JC - K/W 1.000 0.100 0.010 Single Pulse 0.001 10 -4 10 -3 10 -2 10 -1 10 0 Pulse Width - Seconds Figure 9. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4