IXYS IXFT24N50Q

HiPerFETTM
Power MOSFETs
VDSS
IXFH/IXFT 24N50Q
IXFH/IXFT 26N50Q
Q-Class
500 V
24 A
500 V
26 A
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
IDM
TC = 25°C, Note 1
IAR
TC = 25°C
24
26
96
104
24
26
A
A
A
A
A
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
24N50
26N50
24N50
26N50
24N50
26N50
5
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
1.13/10
Nm/lb.in.
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Test Conditions
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 250 µA
500
VGS(th)
V DS = VGS, ID = 4 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
(TAB)
TO-268 (D3) (IXFT) Case Style
G
G = Gate,
S = Source,
4.5
V
nA
TJ = 25°C
TJ = 125°C
RDS(on)
V GS = 10 V, ID = 0.5 ID25
Note 2
24N50Q
26N50Q
© 2001 IXYS All rights reserved
25
1
µA
mA
0.23
0.20
Ω
Ω
D = Drain,
TAB = Drain
Features
l
l
l
IXYS advanced low Qg process
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
l
Fast switching
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
l
VDS = VDSS
VGS = 0 V
(TAB)
S
V
±100
IDSS
0.23 Ω
0.20 Ω
TO-247 AD (IXFH)
l
Symbol
RDS(on)
V/ns
300
TJ
ID25
l
Easy to mount
Space savings
High power density
98512G (5/01)
IXFH 24N50Q
IXFH 26N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
24
S
3900
pF
500
pF
Crss
130
pF
td(on)
28
ns
30
ns
gfs
V DS = 10 V; ID = 0.5 ID25, Note 2
14
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
td(off)
RG = 2 Ω (External),
55
ns
tf
16
ns
Qg(on)
95
nC
27
nC
40
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.42
RthJC
RthCK
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
24N50Q
26N50Q
24
26
A
A
24N50Q
26N50Q
96
104
A
A
1.3
V
250
ns
µC
A
ISM
Repetitive; Note1
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
K/W
0.25
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.85
8
Note 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1
2
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
3
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
2.2
2.6
A2
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Dim.
Min Recommended Footprint
IXFT 24N50Q
IXFT 26N50Q
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH 24N50Q
IXFH 26N50Q
60
50
40
40
6V
30
20
5V
10
4
8
12
16
6V
30
20
5V
10
0
0
0
20
0
4
8
VDS - Volts
12
16
20
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
Fig.2 Output Characteristics @ Tj = 125°C
2.4
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
VGS=10V
9V
8V
7V
TJ = 125OC
ID - Amperes
ID - Amperes
50
VGS=10V
9V
8V
7V
TJ = 25OC
IXFT 24N50Q
IXFT 26N50Q
TJ = 125oC
2.0
1.6
TJ = 25oC
1.2
10
20
30
40
50
ID = 26A
1.6
ID = 13A
1.2
0.8
25
0.8
0
2.0
60
50
75
100
125
150
TJ - Degrees C
ID - Amperes
Fig.3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence of Drain
to Source Resistance
30
50
IXF_26N50Q
25
40
ID - Amperes
ID - Amperes
IXF_24N50Q
20
15
10
30
TJ = 125oC
TJ = 25oC
20
10
5
0
-50
-25
0
25
50
75
100 125 150
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
© 2001 IXYS All rights reserved
0
0
2
4
6
8
VGS - Volts
Fig.6 Drain Current vs Gate Source Voltage
IXFH 24N50Q
IXFH 26N50Q
IXFT 24N50Q
IXFT 26N50Q
10000
12
f = 1MHz
10
VGS - Volts
8
Capacitance - pF
VDS = 250 V
ID = 13 A
IG = 10 mA
6
4
Ciss
Coss
1000
Crss
2
100
0
0
20
40
60
80
100
0
120
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
50
45
40
ID - Amperes
35
30
TJ = 125OC
25
20
TJ = 25OC
15
10
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Fig.9 Drain Current vs Drain to Source Voltage
1.00
R(th)JC - K/W
D=0.5
0.10
D=0.2
D=0.1
D=0.05
D=0.02
0.01
D=0.01
Single Pulse
0.00
10-5
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025