Not for new designs Low VCE(sat) IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 40 A I C90 TC = 90°C 20 A I CM TC = 25°C, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, T J = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH ICM = 40 @ 0.8 VCES A tSC (SCSOA) VGE = 15 V, V CE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive 10 µs PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard package JEDEC TO-247 AD High frequency IGBT with guaranteed Short Circuit SOA capability IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses MOS Gate turn-on - drive simplicity ● ● ● ● Mounting torque Md 1.13/10 Nm/lb.in. Weight 6 g 300 °C ● ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ● ● ● ● BVCES IC = 1.75 mA, VGE = 0 V 600 VGE(th) IC = 1.5 mA, VCE = VGE 3.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 20N60U1 20N60AU1 V 6.5 V 500 8 µA mA ±100 nA 2.5 3.0 V V ● AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages ● ● ● ● Space savings (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density 91770D (4/96) IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 20N60U1 IXSH 20N60AU1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IC(on) VGE = 15 V, VCE = 10 V 6 Cies S 65 A 1800 pF 250 pF Cres 45 pF Qg 90 120 nC 40 55 nC 65 80 nC Coes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz 7 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc Eoff Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES , RG = 39 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°°C 100 ns tri IC = IC90, VGE = 15 V, L = 100 µH 200 ns td(on) tri td(off) tfi Eon td(off) tfi Eoff 20N60U1 20N60AU1 100 ns 200 ns 450 ns 350 ns ns 2.5 mJ 1 VCE = 0.8 VCES , RG = 39 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher T J or increased RG 20N60U1 20N60AU1 20N60U1 20N60AU1 9 3 1 = Gate 2 = Collector 3 = Emitter Tab = Collector mJ 1000 ns 1000 600 ns ns 5 mJ mJ 0.83 K/W RthJC 0.25 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = IC90, VGE = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM trr IF = IC90, VGE = 0 V, -diF /dt = 240 A/µs VR = 360 V TJ = 125°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C RthJC TO-247 AD Outline 10 150 35 1.6 V 50 A ns ns 1 K/W IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXSH 20N60U1 IXSH 20N60AU1 Fig. 1 Saturation Characteristics 40 Fig. 2 70 VGE = 15V TJ = 25°C TJ = 25°C 13V IC - Amperes 11V 20 VGE =15V 60 30 IC - Amperes Output Characterstics 50 40 13V 30 11V 20 10 9V 10 9V 7V 7V 0 0 0 1 2 3 4 5 0 2 4 6 VCE - Volts Fig. 4 VCE(sat) - Normalized VCE - Volts 7 6 5 4 3 20 Temperature Dependence of Output Saturation Voltage 1.2 11 12 13 14 I C = 20A 1.1 1.0 0.8 0 IC = 10A 0.7 -50 15 IC = 40A 1.3 1 10 18 1.4 0.9 9 16 1.5 2 8 14 V GE = 15V 1.6 IC = 40A IC = 20A IC = 10A 8 12 1.7 TJ = 25°C 9 10 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 8 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 40 Temperature Dependence of Breakdown and Threshold Volt. 1.3 VCE = 10V BV / VGE(th) - Normalized 35 IC - Amperes 30 25 20 15 TJ = 125°C 10 T J = 25°C 5 1.2 BVCES IC = 3mA 1.1 1.0 0.9 VGE(th) 0.8 IC = 1.5mA T J = - 40°C 0 0.7 5 6 7 8 9 10 11 12 13 VGE - Volts IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 14 15 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 20N60U1 IXSH 20N60AU1 tfi - nanoseconds 500 400 hi-speed 5 500 3 Eoff (-A) hi-speed 200 2 100 0 0 600 4 tfi (-A) 300 6 10 20 30 tfi - nanoseconds TJ = 125°C RG = 22Ω Eoff - millijoules 600 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 6 T J = 125°C IC = 20A 5 tfi (-A) 400 300 3 E off (-A) 200 1 100 0 0 40 1 0 0 20 40 60 80 100 120 Rg - Ohms Fig.9 Gate Charge Characteristic Curve Fig.10 Turn-Off Safe Operating Area 100 IC = 20A VCE = 300V TJ = 125°C 12 10 IC - Amperes VGE - Volts 2 hi-speed IC - Amperes 15 4 hi-speed 9 6 RG = 10Ω dV/dt < 6V/ns 1 0.1 3 0.01 0 0 25 50 75 100 0 100 200 Qg - nanocoulombs 300 400 500 600 VCE - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 D=0.2 0.1 D = Duty Cycle D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 Eoff - millijoules Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current IXSH 20N60U1 IXSH 20N60AU1 Fig.12 Maximum Forward Voltage Drop Fig.13 25 60 IF = 37A 20 TJ = 150°C 800 VFR VFR - Volts Current - Amperes 80 1000 T J = 125°C T J = 100°C 40 TJ = 25°C 20 15 600 10 400 5 tfr - nanoseconds Recovery 100 Time tfr Peak Forward Voltage VFR and Forward 200 tfr 0 0.5 0 1.0 1.5 2.0 2.5 0 100 200 Voltage Drop - Volts 300 400 0 600 500 diF /dt - A/µs Fig.14 Junction Temperature Dependence off IRM and Qr Fig.15 Reverse Recovery Chargee 4 1.4 TJ = 100°C VR = 350V Qr - nanocoulombs Normalized IRM /Qr 1.2 1.0 0.8 IRM 0.6 Qr 0.4 max. 2 typ. IF = 60A IF = 30A 1 IF = 15A 0.2 0.0 0 0 40 80 120 160 1 10 TJ - Degrees C Fig.17 40 1000 Reverse Recovery Time 0.8 TJ = 100°C IF = 30A IF = 30A VR = 350V T J = 100°C max. VR = 350V max. trr - nanoseconds 30 IRM - Amperes 100 diF /dt - A/µs Fig.16 Peak Reverse Recovery Current typ. IF = 60A 20 IF = 30A 3 IF = 30A IF = 15A 10 0 0.6 typ. IF = 60A 0.4 IF = 30A IF = 15A 0.2 0.0 200 400 diF /dt - A/µs IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 600 0 200 400 600 diF /dt - A/µs IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 20N60U1 IXSH 20N60AU1 Fig.18 Diode Transient Thermal resistance junction to case RthJC - K/W 1.00 0.10 0.01 0.001 0.01 0.1 Pulse Width - Seconds 1