VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C 50 A I C90 T C = 90°C 25 A I CM T C = 25°C, 1 ms 100 A SSOA (RBSOA) V GE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 30 µH ICM = 50 @ 0.8 VCES A tSC (SCSOA) V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 33 Ω, non repetitive 10 µs PC T C = 25°C 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Mounting torque 1.13/10 Nm/lb.in. Weight g G C E TO-204 AE (IXSM) C TJ Md TO-247 AD (IXSH) TO-204 = 18 g, TO-247 = 6 G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz ● ● ● Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 ● ● Symbol Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 2.5 mA, VCE = VGE I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25°C TJ = 125°C ● V 8 V 250 1 µA mA ±100 nA Applications AC motor speed control Uninterruptible power supplies (UPS) Welding ● ● ● Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density ● VCE(sat) IC = IC90, VGE = 15 V 25N100 25N100A 3.5 4.0 V V ● IXYS reserves the right to change limits, test conditions and dimensions. © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 91548F (4/96) IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I C(on) VGE = 15 V, VCE = 10 V Cies 17 S 140 A 2850 pF 210 pF C res 50 pF Qg 112 130 nC 28 40 nC 50 75 nC C oes Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz 10 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc td(on) Inductive load, T J = 25°°C tri IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 4.7 Ω td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 70 ns 580 ns 150 ns 25N100 25N100A 1200 800 ns ns 25N100 25N100A 10 8 mJ mJ 70 ns Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 580 ns 4.2 mJ 200 550 ns 25N100 25N100A 1500 1000 3000 1500 ns ns 25N100 25N100A 15 11 RthCK TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-204AE Outline mJ mJ 0.63 K/W 0.25 K/W 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A Fig. 1 Saturation Characteristics 50 TJ = 25°C 160 40 VGE =15V 140 IC - Amperes IC - Amperes Output Characterstics 180 13V 11V VGE = 15V TJ = 25°C Fig. 2 30 20 9V 120 13V 100 80 11V 60 40 10 9V 20 7V 0 7V 0 0 1 2 3 4 5 0 2 4 6 8 VCE - Volts Fig. 4 16 18 20 Temperature Dependence of Output Saturation Voltage VGE = 15V VCE(sat) - Normalized 8 7 VCE - Volts 14 1.6 T J = 25°C 9 12 VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 10 6 IC = 50A 5 IC = 25A 4 3 IC = 12.5A 2 IC = 50A 1.4 1.2 IC = 25A 1.0 IC = 12.5A 0.8 1 0 8 9 10 11 12 13 14 0.6 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 50 1.3 IC - Amperes 40 30 20 T J = 125°C TJ = 25°C 10 BV / VGE(th) - Normalized VCE = 10V 1.2 1.1 VGE(th) IC = 2.5mA 1.0 BVCES 0.9 IC = 3mA 0.8 T J = - 40°C 0 0.7 5 6 7 8 9 10 11 12 13 14 15 V - Volts GE © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A 1500 20 1500 TJ = 125°C 16 10 8 600 6 Eoff 300 tfi - nanoseconds 12 9 IC = 25A 1200 Eoff - Millijoules 14 tfi 900 10 T J = 125°C 18 RG = 10Ω 1200 tfi - nanoseconds Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 8 7 tfi 900 6 5 Eoff 600 4 3 300 4 2 2 0 1 0 0 10 15 20 25 30 35 40 45 50 0 0 10 20 30 40 50 60 70 80 90 100 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 Turn-Off Safe Operating Area 100 IC = 25A T J = 125°C RG = 4.7Ω 10 IC - Amperes VGE - Volts Fig.10 VCE = 500V 12 Eoff - Millijoules Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 9 6 dV/dt < 6V/ns 1 0.1 3 0 0.01 0 25 50 75 100 125 150 0 200 QG- nanocoulombs 400 600 800 1000 VCE - Volts Fig.11 Transient Thermal Impedance 1.000 D=0.5 ZthJC - K/W D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.010 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 © IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627