IXYS VUM24-05

VUM 24-05
ID25
= 35 A
VDSS = 500 V
RDS(on) = 0.12 W
Power MOSFET Stage
for Boost Converters
Module for Power Factor Correction
VRRM (Diode)
VDSS
V
V
600
500
5
Type
4 6
VDSS
VDGR
VGS
TVJ = 25°C to 150°C
TVJ = 25°C to 150°C; RGS = 10 kW
Continuous
Maximum Ratings
500
500
±20
V
V
V
24
35
95
A
A
A
170
W
24
95
A
A
TS = 85°C, rectangular d = 0.5
600
40
V
A
TVJ = 45°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
300
320
A
A
TVJ = 150°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
260
280
A
A
36
W
TS = 85°C, sinus 180°
800
40
V
A
TVJ = 45°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
300
320
A
A
TVJ = 150°C, t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
260
280
A
A
TS = 85°C
TS = 25°C
TS = 25°C, tp = ①
TS = 85°C
IS
ISM
VGS = 0 V, TS = 25°C
VGS = 0 V, TS = 25°C, tp = ①
●
●
●
●
Boost Diode
●
TS = 85°C
●
IFSM
Rectifier Diodes
●
VRRM
IdAV
TVJ
TJM
Tstg
VISOL
Md
Weight
Package with DCB ceramic base plate
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Low RDS(on) HDMOSTM process
Low package inductance for high
speed switching
Ultrafast boost diode
Kelvin source for easy drive
Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
Boost topology for SMPS including
1~ rectifier bridge
Power supply for welding equipment
Advantages
●
●
●
●
TS = 85°C
Module
P
7 8
Applications
●
P
6
Features
●
IFSM
3 4
5
●
PD
VRRM
IdAV
2
VUM 24-05N
Test Conditions
MOSFET
2 7 8
1
Symbol
ID
ID
IDM
1 3
50/60 Hz
IISOL £ 1 mA
33
W
●
●
t = 1 min
t=1s
Mounting torque (M5)
-40...+150
150
-40...+150
°C
°C
°C
3000
3600
V~
V~
●
3 functions in one package
Output power up to 5 kW
No external isolation
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
Fits easiliy to all available PFC
controller ICs
2-2.5/18-22 Nm/lb.in.
28
g
① Pulse width limited by TVJ
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
VUM 24-05
Symbol
Test Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VGS = 0 V, ID = 2 mA
VDS = 20 V, ID = 20 mA
VDSS
VGS(th)
500
2
5
V
V
350
A
V = 0.8V
R
RRM
300
250
IFSM
TVJ= 45°C
200
IGSS
VGS = ±20 V, VDS = 0 V
±500
nA
IDSS
VDS = 500 V, VGS = 0 V
2
mA
RDS(on)
RGint
TVJ = 25°C
TVJ = 25°C
0.12
1.5
W
W
1.5
S
V
100
220
ns
ns
gfs
VDS
MOSFET
150
VDS = 15 V,
IDS = 24 A,
IDS = 12 A
VGS = 0 V
30
td(on)
td(off)
VDS = 250 V, IDS = 12 A, VGS = 10 V
Zgen. = 1 W, L-load
Ciss
Coss
Crss
VDS = 25 V, f = 1 MHz, VGS = 0 V
VGS = 10 V
8.5
0.9
0.3
nF
nF
nF
350
nC
0.38 K/W
100
TVJ= 125°C
50
0
0.001
0.01
t
0.1
s
1
Fig. 1 Non-repetitive peak surge
current (Rectifier Diodes)
500
A2s
400
Qg
RthJS
VDS = 250 V, ID = 12 A,
VF
IF
= 22 A;
TVJ = 25°C
TVJ =150°C
1.65
1.4
V
V
IR
VR
VR
= 600 V, TVJ = 25°C
= 480 V, TVJ = 25°C
TVJ =125°C
1.5
0.25
7
mA
mA
mA
100
1.14
V
10 mW
0
300
TVJ= 45°C
I2t
VT0
rT
Boost Diode
200
IRM
For power-loss calculations only
TVJ = 125°C
IF
VR
= 30 A; -diF/dt = 240 A/ms
= 350 V, TVJ = 100°C
Rectifier Diodes
VF
VT0
rT
11
A
1
t
ms
10
Fig. 2 I2t for fusing (Rectifier Diodes)
1.8 K/W
RthJS
IR
10
TVJ= 125°C
IF
= 20 A,
TVJ = 25°C
TVJ =125°C
1.4
1.4
V
V
VR
VR
= 800 V TVJ = 25°C
= 640 V, TVJ =125°C
0.25
2
mA
mA
For power-loss calculations only
TVJ = 125°C
RthJS
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
1.05
V
16 mW
2 K/W
2-4
VUM 24-05
80
A
70
60
6V
ID 50
ID 50
40
40
30
RDS(on) ID=18A
2.0
7V
60
2.5
80
A
70
10 V
norm.
1.5
TVJ = 25°C
TVJ = 125°C
1.0
30
VGS= 5 V
20
20
10
10
0.5
0
0
0
2
4
6
8
V 10
2
3
4
VDS
6
V 7
0.0
-50
VGS
Fig. 3 Typ. output characteristic
ID = f (VDS) (MOSFET)
Fig. 4 Typ. transfer characteristics
ID = f (VGS) (MOSFET)
1.4
BVDSS
VGS(th)
1.2
5
12
Fig. 5 Typ. normalized
RDS(on) = f (TVJ) (MOSFET)
nF
10
VDS= 250 V
VDSS
ID = 18 A
8
VGS
1.0
norm.
100 °C 150
50
100
V
VGS(th)
0
TVJ
Ciss
10
IG = 10 mA
C
6
0.8
Coss
1
4
0.6
2
0.4
-50
0
0
100 °C 150
50
Crss
0.1
0
100
TVJ
Fig. 6 Typ. normalized BVDSS = f (TVJ)
VGS(th) = f (TVJ) (MOSFET)
200
Qg
300 nC 400
0
5
10
15
V
20
VDS
Fig. 7 Typ. turn-on gate charge
characteristics, VGS = f (Qg) (MOSFET)
Fig. 8 Typ. capacitances C = f (VDS),
f = 1 MHz (MOSFET)
80
120
3.0
s
A
µC
100
2.5
80
Qrr 2.0
TVJ=100°C
VR= 350 V
max.
60
gfs
IF
40
60
TVJ=150°C
IF = 37 A
IF = 74 A
TVJ=100°C
1.5
IF = 37 A
IF = 18.5 A
TVJ= 25°C
40
1.0
20
0.5
20
typ.
0
0
20
40
60
80 A 100
ID
Fig. 9 Typ. transconductance,
gfs = f (ID) (MOSFET)
© 2000 IXYS All rights reserved
0
0.5
1.0
1.5
VF
2.0 V 2.5
Fig. 10 Forward current versus
voltage drop (Boost Diode)
0.0
10
100
-diF/dt
A/ms 1000
Fig. 11 Recovery charge versus -diF/dt
(Boost Diode)
3-4
VUM 24-05
1.4
50
A TVJ=100°C
VR= 350 V
40
max.
VR= 350 V
0.5
1.2
trr
Kt
IF = 74 A
30
TVJ=100°C
µs
IF = 37 A
IRM
0.6
0.4
IF = 37 A
IF = 37 A
max.
1.0
IF = 74 A
0.3
IRM
IF = 18.5 A
IF = 37 A
0.8
20
IF = 18.5 A
0.2
typ.
10
Qr
0.6
0.1
typ.
0
0
100
200
300 400
-diF/dt
0.4
20
A/ms 600
500
Fig. 12 Peak reverse current versus
-diF/dt (Boost Diode)
18
V
16
60
80 100 120 140
°C 160
TTVJ
J
Fig. 13 Dynamic parameters versus
junction temperature (Boost Diode)
ms
0.7
VFR
0
100
200
300 400 A/
500
ms 600
-diF/dt
Fig. 14 Recovery time versus
-diF/dt (Boost Diode)
7
kW TS =85°C
6
8
kW TS =85°C
7
0.9
14
VFR
12
0.0
40
6
Pout
5
5
Vin = 230 V/50 Hz
fc = 40 kHz
Pout
4
10
4
0.5
3
8
3
Vin = 115 V/60 Hz
6
tFR
tFR
4
2
0
100
200
0.1
ms 600
300 400 A/
500
diF/dt
Fig. 15 Peak forward voltage versus
-diF/dt (Boost Diode)
0
20
40
60
80
100
kHz 120
fc
Fig. 16 Output power versus carrier
frequency (Module)
2.5
K/W
fc = 80 kHz
0
0
6
Vin = 230 V/50 Hz
fc = 80 kHz
1
1
kW
5
0
50
100
V
200
150
Vin (RMS)
250
Fig. 17 Output power versus
mains voltage
VUM 24
2.0
ZthJC
4
Pout
2
2
0.3
Rectifier Diodes
1.5
Boost Diode
3
Vin = 115 V/60 Hz
1.0
2
0
40
MOSFET
0.5
1
60
80
100 °C 120
TS
Fig. 18 Output power versus
heatsink temperature (Module)
© 2000 IXYS All rights reserved
0.0
0.01
0.1
1
s
10
t
Fig. 19 Transient thermal impedance junction to case for all devices
4-4