NEC 2SC4554

DATA SHEET
SILICON POWER TRANSISTOR
2SC4554
NPN SILICON EPITAXIAL TRANSISTOR
FOR SWITCHING
The 2SC4554 is a power transistor designed especially for low
PACKAGE DRAWING (UNIT: mm)
collector saturation voltage and features large current switching at a
low power dissipation.
In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 5 A)
VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±15
A
IC(pulse)*
±22
A
IB(DC)
4.0
A
Total power dissipation
PT (Tc = 25°C)
35
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15600EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SC4554
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
17
mA
DC current gain
hFE1
VCE = 2.0 V, IC = 5.0 A
450
DC current gain
hFE2
VCE = 2.0 V, IC = 10 A
150
Collector saturation voltage
VCE(sat)1
IC = 5.0 A, IB = 100 mA
Collector saturation voltage
VCE(sat)2
IC = 5.0 A, IB = 50 mA
Collector saturation voltage
VCE(sat)3
Collector saturation voltage
800
2,000
0.25
V
0.3
V
IC = 10 A, IB = 200 mA
0.4
V
VCE(sat)4
IC = 10 A, IB = 100 mA
0.75
V
Base saturation voltage
VBE(sat)
IC = 10 A, IB = 100 mA
1.2
V
Gain bandwidth product
fT
VCE = 5.0 V, IC = 1.0 A
100
MHz
0.12
Collector capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
210
pF
Turn-on time
ton
0.5
µs
Storage time
tstg
IC = 8.0 A, RL = 2.0 Ω,
IB1 = −IB2 = 80 mA, VCC ≅ 16 V
2.0
µs
0.5
µs
1.6
V
Refer to the test circuit.
Fall time
Diode forward voltage
tf
VDF
IDF = 10 A
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
MAX.
Data Sheet D15600EJ2V0DS
2SC4554
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
Collector Current IC (A)
Case Temperature TC (°C)
Single pulse
Transient Thermal Resistance r(t) (°C/W)
Collector to Emitter Voltage VCE (V)
Without heatsink
With infinite heatsink
Pulse Width PW (s)
Data Sheet D15600EJ2V0DS
3
DC Current Gain hFE
Collector Current IC (A)
2SC4554
Collector Current IC (A)
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
4
Collector Current IC (A)
Data Sheet D15600EJ2V0DS
2SC4554
[MEMO]
Data Sheet D15600EJ2V0DS
5
2SC4554
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
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and/or types are available in every country. Please check with an NEC sales representative for
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