DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05 Cre = 0.4 pF TYP. +0.1 1.5 0.65 –0.15 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 3 +0.1 2SC4955-T2 1 0.4 –0.05 Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. 0.3 Marking * Please contact with responsible NEC person, if you evaluation 0 to 0.1 sample. Unit sample quantity shall be 50 pcs. +0.1 3 Kpcs/Reel. 0.16 –0.06 2SC4955-T1 PACKING STYLE 0.95 QUANTITY 2 1.1 to 1.4 PART NUMBER 0.95 2.9±0.2 ORDERING INFORMATION (Part No.: 2SC4955) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 9 V PIN CONNECTIONS Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage 1. Emitter 2. Base 3. Collector VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 180 mW Junction Temperature Tj 150 ˚C Storage Temperature Tstg –64 to +150 ˚C Document No. P10377EJ2V0DS00 (2nd edition) (Previous No. TD-2406) Date Published July 1995 P Printed in Japan © 1993 2SC4955 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 µA VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 µA VEB = 1 V, IC = 0 DC Current Gain hFE 75 Gain Bandwidth Product fT 12 Feed-back Capacitance Cre 0.4 Insertion Gain |S21e|2 Noise Figure NF 7 VCB = 3 V, IC = 10 mA*1 150 GHz 0.7 8.5 1.5 2.5 VCE = 3 V, IC = 10 mA pF VCB = 3 V, IE = 0, f = 1 MHz*2 dB VCE = 3 V, IC = 10 mA,f = 2.0 GHz dB VCE = 3 V, IC = 3 mA,f = 2.0 GHz *1 Pulse Measurement; PW ≤ 350 µs, Duty Cycle ≤ 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank T83 Marking T83 hFE 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Free Air 200 IC - Collector Current - mA PT - Total Power Dissipation - mW 50 180 mW 100 0 50 100 TA - Ambient Temperature - ˚C 2 150 VCE = 3 V 40 30 20 10 0 0.5 VBE - Base to Emitter Voltage - V 1.0 2SC4955 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 60 200 50 400 µA 40 300 µA 30 200 µ A 20 IB = 100 µA hFE - DC Current Gain IC - Collector Current - mA 500 µA 5V VCE = 3 V 100 10 0 1 2 3 4 5 0 0.1 0.2 6 0.5 1 3V 10 8 VCE = 1 V 6 4 |S21e|2 - Insertion Power Gain - dB fT - Gain Bandwidth Product - GHz 5V f = 2 GHZ 5V 10 3V VCE = 1 V 8 6 4 1 2 5 10 20 1 50 2 5 10 20 IC - Collector Current - mA IC - Collector Current - mA NOISE FIGURE vs. COLLECTOR CURRENT FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 50 0.5 4 Cre - Feed-back Capacitance - pF f = 2 GHZ VCE = 3 V NF - Noise Figure - dB 50 100 12 f = 2 GHZ 12 3 2 1 0 0.5 10 20 INSERTION GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 2 0.5 5 IC - Collector Current - mA VCE - Collector to Emitter Voltage - V 14 2 1 2 5 10 20 IC - Collector Current - mA 50 f = 1 MHZ 0.4 0.3 0.2 0.1 0.5 1 2 5 10 20 VCB - Collector to Base Voltage - V 3 2SC4955 S-PARAMETER (VCE = 3 V, IC = 1 mA, ZO = 50 Ω) FREQUENCY S11 (GHz) MAG 0.200 0.400 S21 S12 S22 ANG MAG ANG MAG ANG MAG ANG 0.9400 –15.3 3.4560 165.0 0.0420 76.0 0.9780 –8.7 0.8770 –29.0 3.1870 149.2 0.0800 71.7 0.9490 –16.0 0.600 0.8020 –43.6 3.0390 136.4 0.1140 63.8 0.8910 –23.4 0.800 0.7030 –55.3 2.8000 123.9 0.1340 56.7 0.8280 –29.1 1.000 0.6240 –67.2 2.5890 113.1 0.1520 52.2 0.7630 –33.7 1.200 0.5570 –79.0 2.4320 102.9 0.1690 49.0 0.7170 –37.9 1.400 0.4670 –89.9 2.2140 94.7 0.1810 45.6 0.6940 –41.8 1.600 0.4130 –99.8 2.0430 86.9 0.1880 45.2 0.6450 –43.9 1.800 0.3680 –108.1 1.8790 79.0 0.1910 43.0 0.6050 –46.2 2.000 0.3140 –120.9 1.7720 73.0 0.1990 44.3 0.5860 –50.5 2.200 0.2690 –137.1 1.7010 66.9 0.2140 45.9 0.5600 –53.7 2.400 0.2740 –147.6 1.6030 61.4 0.2170 44.2 0.5520 –54.5 2.600 0.2530 –157.0 1.5010 57.1 0.2270 46.9 0.5260 –58.3 2.800 0.2200 –175.7 1.4330 51.6 0.2460 46.7 0.5160 –61.4 3.000 0.2130 173.7 1.3860 47.5 0.2500 48.9 0.4870 –64.7 ANG MAG ANG MAG ANG MAG ANG (VCE = 3 V, IC = 3 mA, ZO = 50 Ω) FREQUENCY 4 S11 S21 S12 S22 (GHz) MAG 0.200 0.8160 –24.9 8.5180 154.3 0.0410 77.4 0.9240 –14.9 0.400 0.6610 –42.6 6.9310 133.1 0.0680 67.4 0.8190 –24.8 0.600 0.5300 –58.7 5.7770 118.4 0.0900 64.1 0.7120 –31.7 0.800 0.4090 –69.1 4.8150 106.7 0.1070 61.2 0.6430 –34.3 1.000 0.3280 –79.6 4.1130 97.3 0.1250 62.3 0.5820 –36.7 1.200 0.2670 –88.9 3.6270 89.7 0.1440 58.4 0.5300 –38.1 1.400 0.2080 –98.5 3.1680 83.4 0.1570 57.1 0.5100 –40.9 1.600 0.1800 –108.0 2.8600 77.1 0.1680 58.4 0.4870 –41.6 1.800 0.1300 –112.7 2.5690 71.9 0.1870 57.7 0.4550 –42.6 2.000 0.0970 –132.3 2.3660 66.9 0.2030 56.7 0.4490 –45.7 2.200 0.0830 –156.8 2.2340 62.7 0.2230 55.3 0.4250 –50.3 2.400 0.1010 –167.1 2.0840 57.4 0.2450 56.3 0.4270 –48.0 2.600 0.0840 169.7 1.9230 54.3 0.2540 56.5 0.4120 –55.0 2.800 0.0950 156.3 1.8400 49.5 0.2760 54.9 0.3850 –58.0 3.000 0.1010 126.6 1.7450 46.5 0.2930 52.0 0.3650 –59.7 2SC4955 S-PARAMETER (VCE = 3 V, IC = 5 mA, ZO = 50 Ω) FREQUENCY S11 (GHz) MAG 0.200 0.7170 0.400 0.5230 0.600 0.800 S21 ANG S12 S22 MAG ANG MAG ANG MAG ANG –30.9 11.5670 147.4 0.0340 77.4 0.8840 –18.6 –48.6 8.6210 124.7 0.0630 68.1 0.7490 –28.2 0.4020 –64.1 6.7610 110.7 0.0840 67.1 0.6190 –32.6 0.2860 –71.9 5.4360 100.2 0.0970 62.7 0.5560 –34.2 1.000 0.2270 –77.9 4.5550 91.8 0.1110 65.0 0.5030 –35.0 1.200 0.1830 –85.3 3.9560 85.3 0.1380 63.9 0.4750 –36.8 1.400 0.1280 –95.6 3.4140 79.5 0.1600 62.8 0.4630 –38.5 1.600 0.1080 –105.1 3.0630 74.3 0.1800 62.2 0.4440 –38.5 1.800 0.0680 –113.1 2.7510 69.4 0.1920 61.5 0.4240 –38.5 2.000 0.0370 –131.4 2.5150 64.9 0.2190 60.4 0.4100 –44.3 2.200 0.0410 171.2 2.3620 60.5 0.2310 59.8 0.3850 –49.2 2.400 0.0480 170.0 2.2000 56.8 0.2460 57.9 0.3960 –45.0 2.600 0.0540 146.9 2.0470 53.7 0.2700 56.4 0.3650 –54.6 2.800 0.0760 127.6 1.9320 49.2 0.2980 56.3 0.3790 –55.9 3.000 0.0900 111.8 1.8520 45.8 0.3190 52.5 0.3160 –61.2 ANG MAG ANG MAG ANG MAG ANG (VCE = 3 V, IC = 10 mA, ZO = 50 Ω) FREQUENCY S11 S21 S12 S22 (GHz) MAG 0.200 0.542 –38.9 15.738 136.5 0.035 73.8 0.789 –22.9 0.400 0.348 –53.6 10.350 114.2 0.058 66.8 0.626 –29.9 0.600 0.247 –62.6 7.604 102.2 0.075 70.8 0.529 –31.7 0.800 0.168 –70.7 5.939 93.4 0.094 69.1 0.474 –30.9 1.000 0.120 –73.9 4.899 86.4 0.106 69.3 0.457 –31.3 1.200 0.091 –79.6 4.218 81.0 0.138 68.3 0.427 –33.1 1.400 0.060 –85.7 3.615 76.0 0.160 66.9 0.407 –34.6 1.600 0.041 –97.8 3.244 71.5 0.179 65.2 0.408 –35.2 1.800 0.016 –68.1 2.884 66.9 0.200 66.8 0.383 –38.5 2.000 0.017 54.7 2.625 63.0 0.217 62.8 0.375 –39.4 2.200 0.040 109.0 2.480 59.0 0.238 62.1 0.361 –45.8 2.400 0.053 114.8 2.291 55.5 0.262 58.2 0.356 –42.6 2.600 0.054 97.4 2.139 52.6 0.289 59.3 0.337 –51.4 2.800 0.084 99.5 1.995 47.9 0.292 54.8 0.326 –49.9 3.000 0.108 87.6 1.917 45.4 0.331 54.4 0.274 –58.4 5 2SC4955 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6