PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) • High fT 16 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0 to 0.1 3 kpcs/reel 0.7 2SC5409-T1 QUANTITY 0.9±0.1 PART NUMBER E 2.0±0.2 ORDERING INFORMATION T97 • 6-pin Small Mini Mold Package 1.3 0.65 0.65 @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 0.2 +0.1 –0 1.25±0.1 |S21e|2 = 14 dB TYP. Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 5 V Collector to Emitter Voltage VCEO 3 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 90 mW Junction Temperature Tj 150 °C Storage Temperature Tstg –65 to +150 °C E: Emitter C: Collector B: Base Because this product uses high-frequency process, avoid excessive input of static electricity, etc. Document No. P12096EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan © 1997 2SC5409 ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 µA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 µA DC Current Gain hFE VCE = 2 V, IC = 20 mA Note 1 70 VCE = 2 V, IC = 20 mA, f = 2.0 GHz 13 Gain Bandwidth Product fT Feed-back Capacitance Cre Insertion Power Gain |S21e| Noise Figure 16 VCB = 2 V, IE = 0, f = 1 MHz Note 2 2 NF Rank 140 GHz 0.2 VCE = 2 V, IC = 20 mA, f = 2.0 GHz 12 0.3 pF 14 VCE = 2 V, IC = 3 mA, f = 2.0 GHz dB 1.1 1.8 dB FB Marking T97 hFE 70 to 140 Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed 2. Measured with three-pin bridge, with emitter pin connected to the bridge guard. TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 2 V Free Air IC - Collector Current - mA PT - Total Power Dissipation - mW 200 100 90 mW 40 30 20 10 0 50 100 TA - Ambient Temperature - °C 0 150 0.5 VBE - Base to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 20 200 µ A 180 µ A 160 µ A 140 µ A 15 120 µ A 100 µ A 10 80 µ A 60 µ A 5 40 µ A IB = 20 µA 1.0 2.0 3.0 VCE - Collector to Emitter Voltage - V 2 200 hFE - DC Current Gain IC - Collector Current - mA 25 0 1.0 VCE = 2 V 100 50 VCE = 1 V 20 10 1 2 5 10 20 IC - Collector Current - mA 50 100 2SC5409 |S21e|2 vs. IC characteristics fT vs. IC characteristics 18 VCE = 2 V f = 2 GHz VCE = 2 V f = 2 GHz 16 |S21e|2 - Insertion Power Gain - dB fT - Gain Bandwidth Product - GHz 20 10 14 12 10 8 6 4 2 0 1 10 IC - Collector Current - mA 0 100 1 10 IC - Collector Current - mA NF vs. IC characteristics Cre vs. VCB 4 0.5 f = 1 MHz Cre - Feed-back Capacitance - pF 3 2 1 1 10 100 0.4 0.3 0.2 0.1 0 1 IC - Collector Current - mA 10 100 VCB - Collector to Base Voltage - V |S21e|2 vs. f characteristics 40 VCE = 2 V |S21e|2 - Insertion Power Gain - dB NF - Noise Figure - dB VCE = 2 V f = 2 GHz 0 100 30 20 IC = 20 mA 10 IC = 3 mA 0 0.1 0.5 f - Frequency - GHz 1.0 2.0 2.6 3 2SC5409 S PARAMETER VCE = 2 V IC = 3 mA FREQUENCY MHz 100.000 200.000 300.000 400.000 500.000 600.000 700.000 800.000 900.000 1 000.000 1 100.000 1 200.000 1 300.000 1 400.000 1 500.000 1 600.000 1 700.000 1 800.000 1 900.000 2 000.000 2 100.000 2 200.000 2 300.000 2 400.000 2 500.000 2 600.000 S 11 MAG 0.907 0.887 0.861 0.826 0.788 0.740 0.700 0.659 0.621 0.585 0.555 0.532 0.508 0.492 0.483 0.473 0.472 0.469 0.469 0.472 0.479 0.482 0.495 0.504 0.512 0.523 ANG –11.3 –22.7 –33.6 –45.1 –54.5 –65.4 –75.2 –84.6 –94.5 –103.3 –112.1 –121.0 –129.0 –137.3 –145.3 –153.1 –160.0 –167.1 –173.9 179.9 173.9 168.5 163.1 157.8 153.7 148.9 S 21 MAG 7.343 7.221 6.963 6.563 6.506 6.264 5.775 5.644 5.314 4.924 4.705 4.442 4.230 3.978 3.795 3.615 3.372 3.237 3.106 2.932 2.825 2.706 2.607 2.479 2.403 2.361 S 12 ANG 170.3 161.1 152.8 143.9 134.8 128.6 120.4 113.8 108.4 101.7 95.6 90.9 85.7 81.1 76.4 72.9 69.1 63.7 60.8 56.9 52.9 49.4 46.0 42.3 37.4 34.8 MAG 0.013 0.026 0.034 0.045 0.053 0.062 0.067 0.073 0.076 0.078 0.080 0.083 0.083 0.083 0.083 0.083 0.083 0.084 0.082 0.083 0.084 0.083 0.082 0.083 0.080 0.082 ANG 157.5 139.8 126.3 115.9 107.9 101.2 95.6 90.7 86.1 82.1 78.4 74.9 71.4 68.3 65.1 61.9 59.2 56.0 53.0 50.1 47.3 44.6 41.7 38.9 36.1 33.2 MAG 0.010 0.018 0.024 0.028 0.032 0.035 0.038 0.040 0.043 0.046 0.049 0.051 0.054 0.058 0.060 0.064 0.067 0.070 0.073 0.075 0.078 0.082 0.084 0.087 0.090 0.093 S 22 ANG 81.4 73.9 66.4 62.4 55.1 50.1 44.8 41.1 35.9 33.6 29.9 27.3 24.7 23.6 21.8 19.9 19.7 17.4 16.3 17.0 16.1 15.3 14.5 15.0 14.7 15.4 MAG 0.977 0.960 0.929 0.894 0.860 0.815 0.772 0.734 0.691 0.658 0.621 0.592 0.565 0.545 0.522 0.504 0.490 0.476 0.461 0.456 0.446 0.438 0.435 0.432 0.429 0.428 ANG 76.4 65.2 59.7 54.2 51.9 51.0 50.1 49.1 49.4 49.5 48.7 48.9 48.8 48.6 48.1 47.6 47.2 46.4 45.9 45.0 44.3 43.6 42.8 41.7 40.6 39.7 MAG 0.877 0.773 0.666 0.573 0.504 0.446 0.403 0.369 0.339 0.319 0.297 0.281 0.268 0.260 0.248 0.242 0.239 0.234 0.230 0.234 0.232 0.233 0.238 0.243 0.244 0.252 ANG –7.0 –13.9 –20.6 –27.1 –33.3 –38.4 –43.2 –48.1 –51.9 –56.1 –59.8 –63.0 –66.2 –69.7 –72.7 –75.9 –79.1 –82.5 –85.7 –89.2 –92.3 –96.1 –99.5 –103.7 –106.9 –110.8 VCE = 2 V IC = 20 mA FREQUENCY MHz 100.000 200.000 300.000 400.000 500.000 600.000 700.000 800.000 900.000 1 000.000 1 100.000 1 200.000 1 300.000 1 400.000 1 500.000 1 600.000 1 700.000 1 800.000 1 900.000 2 000.000 2 100.000 2 200.000 2 300.000 2 400.000 2 500.000 2 600.000 4 S 11 MAG 0.591 0.530 0.475 0.428 0.400 0.380 0.368 0.361 0.359 0.359 0.362 0.368 0.373 0.381 0.392 0.401 0.410 0.422 0.431 0.442 0.455 0.466 0.480 0.492 0.502 0.516 ANG –30.8 –58.2 –80.8 –100.1 –115.3 –128.9 –140.5 –150.7 –159.9 –167.9 –174.9 178.6 172.9 167.3 162.4 157.7 153.9 150.0 146.1 142.8 139.7 136.5 134.0 131.1 128.6 126.0 S 21 MAG 33.233 28.692 24.362 20.644 17.561 15.258 13.430 11.977 10.742 9.780 8.924 8.211 7.608 7.103 6.621 6.229 5.884 5.555 5.256 4.992 4.755 4.540 4.335 4.139 3.972 3.796 S 12 S 22 ANG –17.3 –31.4 –41.4 –49.6 –55.1 –59.4 –62.8 –66.2 –68.9 –72.1 –75.2 –77.9 –81.0 –84.7 –87.9 –91.9 –95.6 –99.9 –104.0 –108.7 –112.7 –118.4 –122.5 –128.0 –132.0 –136.4 2SC5409 [MEMO] 5 2SC5409 [MEMO] 6 2SC5409 [MEMO] 7 2SC5409 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2