NEC 2SD2425AB3

DATA SHEET
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2425 is a transistor featuring high current
capacitance in small dimension.
PACKAGE DRAWING (UNIT: mm)
This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• New package with dimensions in between those of small
signal and power signal package
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1578
QUALITY GRADES
Electrode connection
1. Emitter
2. Collector
3.Base
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
VEBO
6.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
7.0
A
Base current (DC)
IB(DC)
1.0
A
2.0
W
Emitter to base voltage
PW ≤ 10 ms, duty cycle ≤ 50 %
7.5 cm × 0.7 mm ceramic board mounted
2
Total power dissipation
PT
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16157EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD2425
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
10
µA
Emitter cutoff current
IEBO
VEB = 6.0 V, IC = 0
10
µA
DC current gain
hFE1
VCE = 1.0 V, IC = 0.1 A
60
180
DC current gain
hFE2
VCE = 1.0 V, IC = 2.0 A
100
200
DC current gain
hFE3
VCE = 2.0 V, IC = 5.0 A
50
150
−
400
−
−
Collector saturation voltage
VCE(sat)
IC = 2.0 A, IB = 0.2 A
90
300
mV
Base saturation voltage
VBE(sat)
IC = 2.0 A, IB = 0.2 A
0.9
1.2
V
Turn-on time
ton
0.6
µs
Storage time
tstg
IC = 2.0 A, VCC= 10 V
IB1 = −IB2 = 0.2 A
RL = 5.0 Ω
0.8
µs
0.08
µs
Fall time
tf
hFE CLASSIFICATION
Marking
AB1
AB2
AB3
hFE2
100 to 200
160 to 320
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25°°C)
2
MIN.
Data Sheet D16157EJ1V0DS
2SD2425
Data Sheet D16157EJ1V0DS
3
2SD2425
4
Data Sheet D16157EJ1V0DS
2SD2425
[MEMO]
Data Sheet D16157EJ1V0DS
5
2SD2425
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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(Note)
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M8E 00. 4