NEC RD56S

DATA SHEET
ZENER DIODES
RD2.0S to RD120S
ZENER DIODES
200 mW 2 PINS SUPER MINI MOLD
DESCRIPTION
PACKAGE DIMENSIONS
Type RD2.0S to RD120S Series are 2 PIN Super Mini
(in millimeter)
Mold Package zener diodes possessing an allowable power
dissipation of 200 mW.
PACKAGE DIMENSIONS
• Sharp Breakdown characteristic.
0.3±0.05
1.25±0.1
(in millimeters)
FEATURES
2.5±0.15
• Vz: Applied E24 standard.
Circuit for Constant Voltage, Constant Current, Wave form
Clipper, Surge absorber, etc.
,,
,,,,
APPLICATIONS
0.11 +0.05
–0.01
0±0.05
0.9±0.1
Cathode
Indication
0.19
1.7±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
200 mW
Forward Current
IF
100 mA
Reverse Surge Power
PRSM
85 W (at t=10 µs/1 pulse) Show Fig. 12
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
–55 to +150 °C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. D11444EJ3V0DS00 (3rd edition)
Date Published March 1999 N CP(K)
Printed in Japan
©
1995
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Zener Voltage
Vz (V)Note 1
Dynamic
Impedance Zz (Ω)Note 2
Reverse Current
IR (µA)
MIN.
MAX.
Iz (mA)
MAX.
Iz (mA)
MAX.
VR (V)
RD2.0S
B
1.90
2.20
5
100
5
120
0.5
RD2.2S
B
2.10
2.40
5
100
5
120
0.7
RD2.4S
B
2.30
2.60
5
100
5
120
1.0
RD2.7S
B
2.50
2.90
5
110
5
120
1.0
B1
2.50
2.75
B2
2.65
2.90
B
2.80
3.20
5
120
5
50
1.0
B1
2.80
3.05
B2
2.95
3.20
B
3.10
3.50
5
130
5
20
1.0
B1
3.10
3.35
B2
3.25
3.50
B
3.40
3.80
5
130
5
10
1.0
B1
3.40
3.65
B2
3.55
3.80
B
3.70
4.10
5
130
5
10
1.0
B1
3.70
3.97
B2
3.87
4.10
B
4.00
4.49
5
130
5
10
1.0
B1
4.00
4.22
B2
4.14
4.35
B3
4.27
4.49
B
4.40
4.92
5
130
5
10
1.0
B1
4.40
4.63
B2
4.53
4.77
B3
4.67
4.92
B
4.82
5.39
5
130
5
5
1.5
B1
4.82
5.06
B2
4.96
5.22
B3
5.12
5.39
B
5.29
5.94
5
80
5
5
2.5
B1
5.29
5.57
B2
5.47
5.75
B3
5.65
5.94
B
5.84
6.55
5
50
5
2
3.0
B1
5.84
6.14
B2
6.04
6.35
B3
6.24
6.55
RD3.0S
RD3.3S
RD3.6S
RD3.9S
RD4.3S
RD4.7S
RD5.1S
RD5.6S
RD6.2S
2
Class
Data Sheet D11444EJ3V0DS00
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Class
Zener Voltage
Vz (V)Note 1
Dynamic
Impedance Zz (Ω)Note 2
Reverse Current
IR (µA)
MIN.
MAX.
Iz (mA)
MAX.
Iz (mA)
MAX.
VR (V)
B
6.44
7.17
5
30
5
2
3.5
B1
6.44
6.76
B2
6.62
6.96
B3
6.83
7.17
B
7.03
7.87
5
30
5
2
4.0
B1
7.03
7.39
B2
7.25
7.63
B3
7.49
7.87
B
7.73
8.67
5
30
5
2
5.0
B1
7.73
8.13
B2
7.98
8.39
B3
8.25
8.67
B
8.53
9.58
5
30
5
2
6.0
B1
8.53
8.96
B2
8.81
9.26
B3
9.12
9.58
B
9.42
10.58
5
30
5
2
7.0
B1
9.42
9.90
B2
9.74
10.24
B3
10.08
10.58
B
10.40
11.60
5
30
5
2
8.0
B1
10.40
10.92
B2
10.72
11.26
B3
11.06
11.60
B
11.38
12.64
5
35
5
2
9.0
B1
11.38
11.94
B2
11.69
12.28
B3
12.04
12.64
RD13S
B
12.43
14.00
5
35
5
2
10
RD15S
B
13.80
15.56
5
40
5
2
11
RD16S
B
15.31
17.14
5
40
5
2
12
RD18S
B
16.89
19.08
5
45
5
2
13
RD20S
B
18.80
21.14
5
50
5
2
15
RD22S
B
20.81
23.25
5
55
5
2
17
RD24S
B
22.86
25.66
5
60
5
2
19
RD27S
B
25.10
28.90
2
70
2
2
21
RD30S
B
28.00
32.00
2
80
2
2
23
RD33S
B
31.00
35.00
2
80
2
2
25
RD36S
B
34.00
38.00
2
90
2
2
27
RD6.8S
RD7.5S
RD8.2S
RD9.1S
RD10S
RD11S
RD12S
Data Sheet D11444EJ3V0DS00
3
RD2.0S to RD120S
ELECTRICAL CHARACTERISTICS (TA = 25 ± 2 °C)
Type Number
Class
Zener Voltage
Vz (V)Note 1
Dynamic
Impedance Zz (Ω)Note 2
MIN.
MAX.
Iz (mA)
MAX.
Iz (mA)
MAX.
VR (V)
RD39S
B
37.00
41.00
2
100
2
2
30
RD43S
B
40.00
45.00
2
130
2
2
33
RD47S
B
44.00
49.00
2
150
2
2
36
RD51S
B
48.00
54.00
2
180
2
1
39
RD56S
B
53.00
60.00
2
180
2
1
43
RD62S
B
58.00
66.00
2
200
2
0.2
47
RD68S
B
64.00
72.00
2
250
2
0.2
52
RD75S
B
70.00
79.00
2
300
2
0.2
57
RD82S
B
77.00
87.00
2
300
2
0.2
63
RD91S
B
85.00
96.00
1
700
1
0.2
69
RD100S
B
94.00
106.0
1
700
1
0.2
76
RD110S
B
104.0
116.0
1
800
1
0.2
84
RD120S
B
114.0
126.0
1
900
1
0.2
91
Note 1. Vz is tested with pulsed (40 ms).
2. Zz is measured at Iz by given a very small A.C. current signal.
4
Reverse Current
IR (µA)
Data Sheet D11444EJ3V0DS00
RD2.0S to RD120S
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE
P - Power Dissipation - mW
250
200
30×30×1.6
P. C. B. (Glass Epoxy)
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Fig. 2 ZENER CURRENT vs. ZENER VOLTAGE
Fig. 3 ZENER CURRENT vs. ZENER VOLTAGE
RD2.2S
RD2.0S
RD2.4S
100 m
RD2.7S
RD3.0S
RD3.3S
10 m RD3.6S
RD3.9S
RD6.8S
RD7.5S
RD8.2S
RD9.1S
TA = 25 °C
TYP.
100 m
RD13S
10 m
1m
1m
IZ - Zener Current - A
IZ - Zener Current - A
RD10S RD11S
RD12S
100 µ
10 µ
100 µ
10 µ
1µ
1µ
100 n
100 n
RD4.3S
RD4.7S
RD5.1S
RD5.6S
10 n
10 n
RD6.2S
1n
0
1
2
3
4
5
6
7
VZ - Zener Voltage - V
8
9
10
1n
Data Sheet D11444EJ3V0DS00
0
7
8
9 10 11 12 13 14 15
Vz - Zener Voltage - V
5
RD2.0S to RD120S
Fig. 4 ZENER CURRENT vs. ZENER VOLTAGE
Fig. 5 ZENER CURRENT vs. ZENER VOLTAGE
TA = 25 °C
TYP
TA = 25 °C
TYP
100 m
100 m
RD15S
RD22S
RD18S RD20S
RD16S
10 m
10 m
1m
Iz - Zener Current - A
1m
Iz - Zener Current - A
RD27S RD30S
RD24S
100 µ
10 µ
1 µ
100 µ
10 µ
1 µ
100 n
100 n
10 n
10 n
1n
1n
0
0
12 13 14 15 16 17 18 19 20
Vz - Zener Voltage - V
Fig. 6 ZENER CURRENT vs. ZENER VOLTAGE
16 18 20 22 24 26 28 30 32
Vz - Zener Voltage - V
Fig. 7 ZENER CURRENT vs. ZENER VOLTAGE
TA = 25 °C
TYP
TA = 25 °C
TYP
100 m
100 m
RD68S
RD62S
RD82S RD91S
RD47S
RD75S
RD100S
10 m
RD110S
RD43S
RD120S
RD56S
RD33S RD36S
10 m
RD39S
1m
100 µ
10 µ
1µ
100 µ
10 µ
1µ
100 n
100 n
10 n
10 n
1n
6
Iz - Zener Current - A
Iz - Zener Current - A
1m
1n
0 25
30
35
Vz - Zener Voltage - V
40
Data Sheet D11444EJ3V0DS00
0 30
60
90
Vz - Zener Voltage - V
120
RD2.0S to RD120S
Fig. 8 DYNAMIC IMPEDANCE vs. ZENER CURRENT
ZZ - Zener Impedance - Ω
1000
RD2.0S
RD2.4S
RD3.0S
RD3.9S
RD4.7S
RD5.1S
100 RD5.6S
RD39S
RD24S
RD20S
RD15S
RD10S
10 RD7.5S
1
0.1
1
10
100
IZ - Zener Current - mA
Fig. 9 ZENER VOLTAGE TEMPERATURE
Fig. 10 ZENER VOLTAGE TEMPERATURE
32
0.06
24
0.04
16
%mV/°C
0.02
8
0
0
–0.02
–8
–0.04
–16
–0.06
RD2.0S to RD39S
0
4
8
12
16
20
24
28
VZ - Zener Voltage - V
32
36
–24
40
0.12
γ Z - Zener Voltage Temperature Coefficient - mV/ °C
%V/°C
0.08
γ Z - Zener Voltage Temperature Coefficient - % / °C
40
0.1
COEFFICIENT vs. ZENER VOLTAGE
γ Z - VZ Temperature Coefficient - mV/°C
γ Z - VZ Temperature Coefficient - %/°C
COEFFICIENT vs. ZENER VOLTAGE
140
TYP.
120
0.11
%/°C
0.10
100
80
0.09
mV/°C
0.08
60
0.07
RD43S to RD120S
0
Data Sheet D11444EJ3V0DS00
40 50
60
70
80
90 100 110 120
Vz - Zener Voltage - V
40
20
7
RD2.0S to RD120S
Fig. 11 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Zth - Transient Thermal Impedance -°C
5000
1000
RD[ ]S
100
P.C.B (Glass Epoxy)
10
(30mm × 30mm × 1.6mm)
5
1m
10m
100m
1
10
100
t - Time - s
Fig. 12 SURGE REVERSE POWER RATINGS
1 000
PRSM
PRSM - Surge Reverse Power - W
TA = 25 °C
Repetitive
tT
100
10
1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
8
Data Sheet D11444EJ3V0DS00
10 m
100 m
RD2.0S to RD120S
[MEMO]
Data Sheet D11444EJ3V0DS00
9
RD2.0S to RD120S
[MEMO]
10
Data Sheet D11444EJ3V0DS00
RD2.0S to RD120S
[MEMO]
Data Sheet D11444EJ3V0DS00
11
RD2.0S to RD120S
[MEMO]
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights
or other intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated “quality assurance program“ for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98.8