NEC UPD44165082F5-E75-EQ1

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM
2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the
µPD44165362 is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS
technology using full CMOS six-transistor memory cell.
The µPD44165082, µPD44165182 and µPD44165362 integrates unique synchronous peripheral circuitry and a
burst counter. All input registers controlled by an input clock pair (K and /K) are latched on the positive edge of K and
/K.
These products are suitable for application which require synchronous operation, high speed, low voltage, high
density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
• 1.8 ± 0.1 V power supply and HSTL I/O
• DLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR READ and WRITE operation
• Two-tick burst for low DDR transaction size
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output clocks (C and /C) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop capability with µs restart
• User programmable impedance output
• Fast clock cycle time : 5.0 ns (200 MHz), 6.0 ns (167 MHz), 7.5 ns (133 MHz)
• Simple control logic for easy depth expansion
• JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M15824EJ7V1DS00 (7th edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2001
µPD44165082, 44165182, 44165362
Ordering Information
Part number
Cycle
Clock
Time
Frequency
ns
MHz
µPD44165082F5-E50-EQ1
5.0
200
µPD44165082F5-E60-EQ1
6.0
167
µPD44165082F5-E75-EQ1
7.5
133
µPD44165182F5-E50-EQ1
5.0
200
µPD44165182F5-E60-EQ1
6.0
167
µPD44165182F5-E75-EQ1
7.5
133
µPD44165362F5-E50-EQ1
5.0
200
µPD44165362F5-E60-EQ1
6.0
167
µPD44165362F5-E75-EQ1
7.5
133
2
Organization Core Supply
(word x bit)
Voltage
I/O
Package
Interface
V
2 M x 8-bit
1.8 ± 0.1
HSTL
165-pin PLASTIC
BGA (13 x 15)
1 M x 18-bit
512 K x 36-bit
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
Pin Configurations
/××× indicates active low signal.
165-pin PLASTIC BGA (13 x 15)
(Top View)
[µPD44165082F5-EQ1]
1
2
3
4
5
6
7
8
9
10
11
A
/CQ
VSS
A
/W
/NW1
/K
NC
/R
A
VSS
CQ
B
NC
NC
NC
A
NC
K
/NW0
A
NC
NC
Q3
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
D3
D
NC
D4
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D5
Q5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
/DLL
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q1
D1
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D0
N
NC
D7
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
R
TDO
TCK
A
A
A
/C
A
A
A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D7
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q7
: Data outputs
TCK
: IEEE 1149.1 Clock input
/R
: Read input
TDO
: IEEE 1149.1 Test output
/W
: Write input
VREF
: HSTL input reference input
/NW0, /NW1
: Nibble Write data select
VDD
: Power Supply
K, /K
: Input clock
VDDQ
: Power Supply
C, /C
: Output clock
VSS
: Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remark Refer to Package Drawing for the index mark.
Data Sheet M15824EJ7V1DS
3
µPD44165082, 44165182, 44165362
165-pin PLASTIC BGA (13 x 15)
(Top View)
[µPD44165182F5-EQ1]
1
2
3
4
5
6
7
8
9
10
11
A
/CQ
VSS
NC
/W
/BW1
/K
NC
/R
A
VSS
CQ
B
NC
Q9
D9
A
NC
K
/BW0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
A
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
/DLL
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
/C
A
A
A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D17
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q17
: Data outputs
TCK
: IEEE 1149.1 Clock input
/R
: Read input
TDO
: IEEE 1149.1 Test output
/W
: Write input
VREF
: HSTL input reference input
/BW0, /BW1
: Byte Write data select
VDD
: Power Supply
K, /K
: Input clock
VDDQ
: Power Supply
C, /C
: Output clock
VSS
: Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remark Refer to Package Drawing for the index mark.
4
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
165-pin PLASTIC BGA (13 x 15)
(Top View)
[µPD44165362F5-EQ1]
1
2
3
4
5
6
7
8
9
10
11
A
/CQ
VSS
NC
/W
/BW2
/K
/BW1
/R
NC
VSS
CQ
B
Q27
Q18
D18
A
/BW3
K
/BW0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
A
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
/DLL
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
/C
A
A
A
TMS
TDI
A
: Address inputs
TMS
: IEEE 1149.1 Test input
D0 to D35
: Data inputs
TDI
: IEEE 1149.1 Test input
Q0 to Q35
: Data outputs
TCK
: IEEE 1149.1 Clock input
/R
: Read input
TDO
: IEEE 1149.1 Test output
/W
: Write input
VREF
: HSTL input reference input
/BW0 to /BW3
: Byte Write data select
VDD
: Power Supply
K, /K
: Input clock
VDDQ
: Power Supply
C, /C
: Output clock
VSS
: Ground
CQ, /CQ
: Echo clock
NC
: No connection
ZQ
: Output impedance matching
/DLL
: DLL disable
Remark Refer to Package Drawing for the index mark.
Data Sheet M15824EJ7V1DS
5
µPD44165082, 44165182, 44165362
Pin Identification
Symbol
A
Description
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the
rising edge of K for READ cycles and must meet the setup and hold times around the rising edge of /K for
WRITE cycles. Balls 9A, 3A, 10A, and 2A are reserved for the next higher-order address inputs on future
devices. All transactions operate on a burst of two words (one clock period of bus activity). These inputs are
ignored when device is deselected.
D0 to Dxx
Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and /K
during WRITE operations. See Pin Configurations for ball site location of individual signals.
x8 device uses D0 to D7.
x18 device uses D0 to D17.
x36 device uses D0 to D35.
Q0 to Qxx
Synchronous Data Outputs: Output data is synchronized to the respective C and /C or to K and /K rising edges
if C and /C are tied HIGH. This bus operates in response to /R commands. See Pin Configurations for ball site
location of individual signals.
x8 device uses Q0 to Q7.
x18 device uses Q0 to Q17.
x36 device uses Q0 to Q35.
/R
Synchronous Read: When LOW this input causes the address inputs to be registered and a READ cycle to be
/W
Synchronous Write: When LOW this input causes the address inputs to be registered and a WRITE cycle to be
initiated. This input must meet setup and hold times around the rising edge of K.
initiated. This input must meet setup and hold times around the rising edge of K.
/BWx
Synchronous Byte Writes (Nibble Writes on x8): When LOW these inputs cause their respective byte or nibble
/NWx
to be registered and written during WRITE cycles. These signals must meet setup and hold times around the
rising edges of K and /K for each of the two rising edges comprising the WRITE cycle. See Pin Configurations
for signal to data relationships.
K, /K
Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data
on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous
inputs must meet setup and hold times around the clock rising edges.
C, /C
Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of
/C is used as the output timing reference for first output data. The rising edge of C is used as the output
reference for second output data. Ideally, /C is 180 degrees out of phase with C. C and /C may be tied HIGH to
force the use of K and /K as the output reference clocks instead of having to provide C and /C clocks. If tied
HIGH, C and /C must remain HIGH and not be toggled during device operation.
CQ, /CQ
Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous
data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q
tristates.
ZQ
Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus
impedance. DQ and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to
ground. This pin cannot be connected directly to GND or left unconnected. Also, in this product, there is no
function to minimize the output impedance by connecting ZQ directly to VDDQ.
/DLL
DLL Disable: When LOW, this input causes the DLL to be bypassed for stable low frequency operation.
TMS
IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not
TDI
used in the circuit.
TCK
IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to VSS if the JTAG function is not used in the
circuit.
TDO
IEEE 1149.1 Test Output: 1.8V I/O level.
VREF
HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers.
VDD
Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.
VDDQ
Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics
and Operating Conditions for range.
VSS
NC
Power Supply: Ground
No Connect: These signals are internally connected and appear in the JTAG scan chain as the logic level
applied to the ball sites. These signals may be connected to ground to improve package heat dissipation.
6
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
Block Diagrams
[µPD44165082]
20
ADDRESS
/R
ADDRESS
/W
20
REGISTRY
& LOGIC
K
/K
/W
/NW0
/R
ARRAY
16
MUX
16
OUTPUT
BUFFER
& LOGIC
MEMORY
OUTPUT
SELECT
REGISTRY
20
2 x 16
OUTPUT
REGISTER
16
SENSE
AMPS
DATA
WRITE
DRIVER
D0 to D7
8
WRITE
REGISTER
/NW1
8
Q0 to Q7
2
CQ,
/CQ
K
K
/K
K
C, /C
OR
K, /K
[µPD44165182]
19
ADDRESS
/R
ADDRESS
/W
19
REGISTRY
& LOGIC
K
/K
/W
/BW0
/R
36
OUTPUT
BUFFER
ARRAY
36
MUX
OUTPUT
SELECT
& LOGIC
19
2 x 36
MEMORY
OUTPUT
REGISTER
36
REGISTRY
SENSE
AMPS
DATA
WRITE
DRIVER
18
WRITE
REGISTER
/BW1
D0 to D17
18
Q0 to Q17
2
CQ,
/CQ
K
K
/K
K
C, /C
OR
K, /K
[µPD44165362]
18
ADDRESS
/R
ADDRESS
/W
18
REGISTRY
& LOGIC
K
/K
/W
72
OUTPUT
BUFFER
ARRAY
72
MUX
OUTPUT
SELECT
& LOGIC
MEMORY
OUTPUT
REGISTER
REGISTRY
18
2 x 72
SENSE
AMPS
36
72
WRITE
DRIVER
D0 to D35
DATA
WRITE
REGISTER
/BW0
/BW1
/BW2
/BW3
36
Q0 to Q35
2
CQ,
/CQ
/R
K
/K
K
K
Data Sheet M15824EJ7V1DS
C, /C
OR
K, /K
7
µPD44165082, 44165182, 44165362
Truth Table
Operation
WRITE cycle
CLK
/R
/W
D or Q
L→H
X
L
Data in
Load address, input write data on
Input data
DA (A+0)
DA (A+1)
consecutive K and /K rising edge
Input clock
K( t ) ↑
/K( t ) ↑
L→H
READ cycle
L
X
Data out
Load address, output data on
Output data
QA (A+0)
QA (A+1)
consecutive C and /C rising edge
Output clock
/C(t+1) ↑
C(t+2) ↑
NOP (No operation)
STANDBY(Clock stopped)
L→H
H
H
D=X or Q=High-Z
Stopped
X
X
Previous state
Remarks 1. H : High level, L : Low level, × : don’t care, ↑ : rising edge.
2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges
except if C and /C are HIGH then Data outputs are delivered at K and /K rising edges.
3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
K. All control inputs are registered during the rising edge of K.
4. This device contains circuitry that will ensure the outputs will be in high impedance during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommended that K = /(/K) = C = /(/C) when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetrically.
8
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
Byte Write Operation
[µPD44165082]
K
/K
/NW0
/NW1
Write D0 to D7
Operation
L→H
–
0
0
–
L→H
0
0
Write D0 to D3
L→H
–
0
1
–
L→H
0
1
Write D4 to D7
L→H
–
1
0
–
L→H
1
0
L→H
–
1
1
–
L→H
1
1
Write nothing
Remarks 1. H : High level, L : Low level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /NW0 and /NW1 can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
[µPD44165182]
Operation
Write D0 to D17
Write D0 to D8
Write D9 to D17
Write nothing
K
/K
/BW0
/BW1
L→H
–
0
0
–
L→H
0
0
L→H
–
0
1
–
L→H
0
1
L→H
–
1
0
–
L→H
1
0
L→H
–
1
1
–
L→H
1
1
Remarks 1. H : High level, L : Low level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /BW0 and /BW1 can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
[µPD44165362]
K
/K
/BW0
/BW1
/BW2
/BW3
Write D0 to D35
Operation
L→H
–
0
0
0
0
–
L→H
0
0
0
0
Write D0 to D8
L→H
–
0
1
1
1
–
L→H
0
1
1
1
Write D9 to D17
L→H
–
1
0
1
1
–
L→H
1
0
1
1
Write D18 to D26
L→H
–
1
1
0
1
–
L→H
1
1
0
1
L→H
–
1
1
1
0
–
L→H
1
1
1
0
L→H
–
1
1
1
1
–
L→H
1
1
1
1
Write D27 to D35
Write nothing
Remarks 1. H : High level, L : Low level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /BW0 to /BW3 can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
Data Sheet M15824EJ7V1DS
9
µPD44165082, 44165182, 44165362
Bus Cycle State Diagram
LOAD NEW
WRITE ADDRESS
AT /K
Always
LOAD NEW
READ ADDRESS
/R = L
/W = L
WRITE DOUBLE
AT /K
Always
READ DOUBLE
/R = L
/W = L
/W = H
/R = H
/W = H
WRITE PORT NOP
/R = H
Supply voltage
provided
Power UP
Supply voltage
provided
READ PORT NOP
R_Init = 0
Remarks 1. The address is concatenated with 1 additional internal LSB to facilitate burst operation.
The address order is always fixed as: xxx...xxx+0, xxx...xxx+1.
Bus cycle is terminated at the end of this sequence (burst count = 2).
2. Read and write state machines can be active simultaneously.
3. State machine control timing sequence is controlled by K.
10
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
Electrical Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VDD
–0.5
+2.9
V
VDDQ
–0.5
VDD
V
Input voltage
VIN
–0.5
VDD + 0.5 (2.9 V MAX.)
V
Input / Output voltage
VI/O
–0.5
VDDQ + 0.5 (2.9 V MAX.)
V
Operating ambient temperature
TA
0
70
°C
Storage temperature
Tstg
–55
+125
°C
Output supply voltage
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to 70 °C)
Parameter
Supply voltage
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
VDD
1.7
1.9
V
Output supply voltage
VDDQ
1.4
VDD
V
1
High level input voltage
VIH (DC)
VREF + 0.1
VDDQ + 0.3
V
1, 2
Low level input voltage
VIL (DC)
–0.3
VREF – 0.1
V
1, 2
Clock input voltage
VIN
–0.3
VDDQ + 0.3
V
1, 2
Reference voltage
VREF
0.68
0.95
V
MAX.
Unit
Note
Notes 1. During normal operation, VDDQ must not exceed VDD.
2. Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms
Recommended AC Operating Conditions (TA = 0 to 70 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
High level input voltage
VIH (AC)
VREF + 0.2
–
V
1
Low level input voltage
VIL (AC)
–
VREF – 0.2
V
1
Note 1. Overshoot: VIH (AC) ≤ VDD + 0.7 V for t ≤ TKHKH/2
Undershoot: VIL (AC) ≥ – 0.5 V for t ≤ TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
Data Sheet M15824EJ7V1DS
11
µPD44165082, 44165182, 44165362
DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V)
Parameter
Symbol
Test condition
MIN.
TYP.
MAX.
x8, x18
Unit
x36
Input leakage current
ILI
–2
–
+2
µA
I/O leakage current
ILO
–2
–
+2
µA
Operating supply current
IDD
(Read Write cycle)
Standby supply current
ISB1
(NOP)
High level output voltage
VOH
Low level output voltage
VIN ≤ VIL or VIN ≥ VIH,
–E50
610
700
II/O = 0 mA
–E60
530
600
Cycle = MAX.
–E75
470
530
VIN ≤ VIL or VIN ≥ VIH,
–E50
270
II/O = 0 mA
–E60
250
Cycle = MAX.
–E75
230
VOH(Low) |IOH| ≤ 0.1 mA
Note1
VOL
Note2
mA
mA
VDDQ – 0.2
–
VDDQ
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
VSS
–
0.2
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
VOL(Low) IOL ≤ 0.1 mA
Note
V
3,4
3,4
V
3,4
3,4
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.
2. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
Capacitance (TA = 25 °C, f = 1MHz)
Parameter
Symbol
Test conditions
MIN.
TYP.
MAX.
Unit
Input capacitance(Address, Control)
CIN
VIN = 0 V
4
5
pF
Input / Output capacitance(D, Q)
CI/O
VI/O = 0 V
6
7
pF
Clock Input capacitance
Cclk
Vclk = 0 V
5
6
pF
Remark These parameters are periodically sampled and not 100% tested.
12
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
AC Characteristics (TA = 0 to 70 °C, VDD = 1.8 ± 0.1 V)
AC Test Conditions
Input waveform (Rise / Fall time ≤ 0.3 ns)
1.25 V
0.75 V
Test Points
0.75 V
0.25 V
Output waveform
Test Points
VDDQ / 2
VDDQ / 2
Output load condition
Figure 1. External load at test
VDDQ / 2
0.75 V
50 Ω
VREF
ZO = 50 Ω
SRAM
250 Ω
ZQ
Data Sheet M15824EJ7V1DS
13
µPD44165082, 44165182, 44165362
Read and Write Cycle
Parameter
-E50
-E60
-E75
(200 MHz)
(167 MHz)
(133 MHz)
Symbol
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Unit
Note
Clock
Average Clock cycle time (K, /K, C, /C)
TKHKH
5.0
8.4
6.0
8.4
7.5
8.4
ns
1
Clock phase jitter (K, /K, C, /C)
TKC var
–
0.2
–
0.2
–
0.2
ns
2
Clock HIGH time (K, /K, C, /C)
TKHKL
2.0
–
2.4
–
3.0
–
ns
ns
Clock LOW time (K, /K, C, /C)
TKLKH
2.0
–
2.4
–
3.0
–
Clock to /clock (K→/K., C→/C.)
TKH /KH
2.2
–
2.7
–
3.38
–
ns
Clock to /clock (/K→K., /C→C.)
T /KHKH
2.2
–
2.7
–
3.38
–
ns
Clock to data clock 167 to 200 MHz
TKHCH
ns
(K→C., /K→/C.)
0
2.3
–
–
–
–
133 to 167 MHz
0
2.8
0
2.8
–
–
< 133 MHz
0
3.55
0
3.55
0
3.55
DLL lock time (K, C)
TKC lock
1,024
–
1,024
–
1,024
–
Cycle
K static to DLL reset
TKC reset
30
–
30
–
30
–
ns
ns
3
Output Times
C, /C HIGH to output valid
TCHQV
–
0.45
–
0.5
–
0.5
C, /C HIGH to output hold
TCHQX
–0.45
–
–0.5
–
–0.5
–
ns
C, /C HIGH to echo clock valid
TCHCQV
–
0.45
–
0.5
–
0.5
ns
C, /C HIGH to echo clock hold
TCHCQX
–0.45
–
–0.5
–
–0.5
–
ns
CQ, /CQ HIGH to output valid
TCQHQV
–
0.35
–
0.4
–
0.4
ns
4
CQ, /CQ HIGH to output hold
TCQHQX
–0.35
–
–0.4
–
–0.4
–
ns
4
C HIGH to output High-Z
TCHQZ
–
0.45
–
0.5
–
0.5
ns
C HIGH to output Low-Z
TCHQX1
–0.45
–
–0.5
–
–0.5
–
ns
Address valid to K rising edge
TAVKH
0.4
–
0.5
–
0.5
–
ns
5
Control inputs (/R, /W) valid to K rising
TIVKH
0.4
–
0.5
–
0.5
–
ns
5
TDVKH
0.4
–
0.5
–
0.5
–
ns
5
K rising edge to address hold
TKHAX
0.4
–
0.5
–
0.5
–
ns
5
K rising edge to control inputs (/R, /W)
hold
TKHIX
0.4
–
0.5
–
0.5
–
ns
5
K, /K rising edge to data inputs and
TKHDX
0.4
–
0.5
–
0.5
–
ns
5
Setup Times
edge
Data inputs and write data select
inputs (/BWx, /NWx) valid to K, /K
rising edge
Hold Times
write data select inputs (/BWx, /NWx)
hold
14
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
Notes 1. The device will operate at clock frequencies slower than TKHKH(MAX.).
2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
3. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.
DLL lock time begins once VDD and input clock are stable.
It is recommended that the device is kept inactive during these cycles.
4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ± 0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
5. This is a synchronous device. All addresses, data and control lines must meet the specified setup
and hold times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions
unless otherwise noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).
4. If C, /C are tied HIGH, K, /K become the references for C, /C timing parameters.
5. VDDQ is 1.5 V DC.
Data Sheet M15824EJ7V1DS
15
µPD44165082, 44165182, 44165362
Read and Write Timing
READ
WRITE
1
2
READ
WRITE
3
4
READ
WRITE
5
NOP
6
7
WRITE
NOP
8
9
10
K
TKHKL
TKLKH
TKH/KH T/KHKH
TKHKH
/K
/R
TKHIX
TIVKH
/W
Address
A0
A1
TAVKH
Data in
A2
A3
A4
A5
A6
D50
D51
TKHAX
TKHAX
TAVKH
D11
D30
D10
D31
TDVKH TKHDX
Data out
D60
D61
TDVKH TKHDX
Q00
Q01
TCHQX
TCHQX
Q20
Q40
TCHQZ
TCHQV
CQ
TCHCQX
TCHCQV
/CQ
TKHCH
TCHCQX
TCHCQV
C
TKHKL
TKLKH
TKHKH
TKH/KH
T/KHKH
TKHCH
/C
Remarks 1. Q00 refers to output from address A0+0.
Q01 refers to output from the next internal burst address following A0,i.e.,A0+1.
2. Outputs are disable (high impedance) one clock cycle after a NOP.
3. In this example, if address A0=A1, data Q00=D10, Q01=D11.
Write data is forwarded immediately as read results.
16
Data Sheet M15824EJ7V1DS
Q41
TCQHQV
TCHQX1
TCHQV
Q21
µPD44165082, 44165182, 44165362
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.
Test Access Port (TAP) Pins
Pin name
TCK
Pin assignments
2R
Description
Test Clock Input.
All input are captured on the rising edge of TCK and all outputs
propagate from the falling edge of TCK.
TMS
10R
TDI
11R
Test Mode Select. This is the command input for the TAP controller state machine.
Test Data Input. This is the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is determined by the state of the TAP
controller state machine and the instruction that is currently loaded in the TAP instruction.
TDO
1R
Test Data Output. Output changes in response to the falling edge of TCK. This is the
output side of the serial registers placed between TDI and TDO.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held high
for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.
JTAG DC Characteristics (TA = 0 to 70°C, VDD = 1.8 ± 0.1 V, unless otherwise noted)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
JTAG Input leakage current
ILI
0 V ≤ VIN ≤ VDD
–5.0
–
+5.0
µA
JTAG I/O leakage current
ILO
0 V ≤ VIN ≤ VDDQ ,
–5.0
–
+5.0
µA
Note
Outputs disabled
JTAG input high voltage
VIH
1.3
–
VDD + 0.3
V
JTAG input low voltage
VIL
–0.3
–
+0.5
V
JTAG output high voltage
JTAG output low voltage
VOH1
| IOHC | = 100 µA
1.6
–
–
V
VOH2
| IOHT | = 2 mA
1.4
–
–
V
VOL1
IOLC = 100 µA
–
–
0.2
V
VOL2
IOLT = 2 mA
–
–
0.4
V
Data Sheet M15824EJ7V1DS
17
µPD44165082, 44165182, 44165362
JTAG AC Test Conditions
Input waveform (Rise / Fall time ≤ 1 ns)
1.8 V
0.9 V
Test Points
0.9 V
0.9 V
Test Points
0.9 V
0V
Output waveform
Output load
Figure 2. External load at test
VTT = 0.9 V
50 Ω
ZO = 50 Ω
TDO
20 pF
18
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
JTAG AC Characteristics (TA = 0 to 70 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
Clock
Clock cycle time
tTHTH
100
–
–
ns
Clock frequency
fTF
–
–
10
MHz
Clock high time
tTHTL
40
–
–
ns
Clock low time
tTLTH
40
–
–
ns
TCK low to TDO unknown
tTLOX
0
–
–
ns
TCK low to TDO valid
tTLOV
–
–
20
ns
TDI valid to TCK high
tDVTH
10
–
–
ns
TCK high to TDI invalid
tTHDX
10
–
–
ns
tMVTH
10
–
–
ns
tCS
10
–
–
ns
Output time
Setup time
TMS setup time
Capture setup time
Hold time
TMS hold time
Capture hold time
tTHMX
10
–
–
ns
tCH
10
–
–
ns
JTAG Timing Diagram
tTHTH
TCK
tTLTH
tTHTL
tMVTH
TMS
tTHMX
tDVTH
TDI
tTHDX
tTLOX
tTLOV
TDO
Data Sheet M15824EJ7V1DS
19
µPD44165082, 44165182, 44165362
Scan Register Definition (1)
Register name
Instruction register
Description
The instruction register holds the instructions that are executed by the TAP controller when it is
moved into the run-test/idle or the various data register state. The register can be loaded when it is
placed between the TDI and TDO pins. The instruction register is automatically preloaded with the
IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.
Bypass register
The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial
test data to be passed through the RAMs TAP to another device in the scan chain with as little delay
as possible.
ID register
The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when
the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.
The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR
state.
Boundary register
The boundary register, under the control of the TAP controller, is loaded with the contents of the
RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and
TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to
activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary register
location. The first column defines the bit’s position in the boundary register. The second column is
the name of the input or I/O at the bump and the third column is the bump number.
Scan Register Definition (2)
Register name
Bit size
Unit
Instruction register
3
bit
Bypass register
1
bit
ID register
32
bit
Boundary register
107
bit
ID Register Definition
Part number
Organization ID [31:28] vendor revision no.
ID [27:12] part no.
ID [11:1] vendor ID no.
ID [0] fix bit
µPD44165082
2M x 8
XXXX
0000 0000 0000 1100
00000010000
1
µPD44165182
1M x 18
XXXX
0000 0000 0000 1101
00000010000
1
µPD44165362
512K x 36
XXXX
0000 0000 0000 1110
00000010000
1
20
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
SCAN Exit Order
Bit
no.
Signal name
x8
x18
x36
Bump
Bit
Signal name
ID
no.
x8
x18
Bump
Bit
x36
ID
no.
Signal name
Bump
x8
x18
x36
ID
1
/C
6R
37
NC
NC
D15
10D
73
NC
NC
Q28
2C
2
C
6P
38
NC
NC
Q15
9E
74
Q4
Q11
Q20
3E
3
A
6N
39
NC
Q7
Q7
10C
75
D4
D11
D20
2D
4
A
7P
40
NC
D7
D7
11D
76
NC
NC
D29
2E
5
A
7N
41
NC
NC
D16
9C
77
NC
NC
Q29
1E
6
A
7R
42
NC
NC
Q16
9D
78
NC
Q12
Q21
2F
7
A
8R
43
Q3
Q8
Q8
11B
79
NC
D12
D21
3F
8
A
8P
44
D3
D8
D8
11C
80
NC
NC
D30
1G
9
A
9R
45
NC
NC
D17
9B
81
NC
NC
Q30
1F
NC
NC
Q17
10B
82
Q5
Q13
Q22
3G
10
NC
Q0
Q0
11P
46
11
NC
D0
D0
10P
47
CQ
11A
83
D5
D13
D22
2G
12
NC
NC
D9
10N
48
–
Internal
84
NC
NC
D31
1J
13
NC
NC
Q9
9P
49
9A
85
NC
NC
Q31
2J
14
NC
Q1
Q1
10M
50
A
8B
86
NC
Q14
Q23
3K
15
NC
D1
D1
11N
51
A
7C
87
NC
D14
D23
3J
16
NC
NC
D10
9M
52
A
6C
88
NC
NC
D32
2K
17
NC
NC
Q10
9N
53
/R
8A
89
NC
NC
Q32
1K
18
Q0
Q2
Q2
11L
54
/BW1
7A
90
Q6
Q15
Q24
2L
19
D0
D2
D2
11M
55
/NW0 /BW0 /BW0
7B
91
D6
D15
D24
3L
20
NC
NC
D11
9L
56
K
6B
92
NC
NC
D33
1M
21
NC
NC
Q11
10L
57
/K
6A
93
NC
NC
Q33
1L
22
NC
Q3
Q3
11K
58
/BW3
5B
94
NC
Q16
Q25
3N
23
NC
D3
D3
10K
59
/NW1 /BW1 /BW2
5A
95
NC
D16
D25
3M
24
NC
NC
D12
9J
60
/W
4A
96
NC
NC
D34
1N
25
NC
NC
Q12
9K
61
A
5C
97
NC
NC
Q34
2M
26
Q1
Q4
Q4
10J
62
A
4B
98
Q7
Q17
Q26
3P
27
D1
D4
D4
11J
63
3A
99
D7
D17
D26
2N
11H
64
/DLL
1H
100
NC
NC
D35
2P
/CQ
1A
101
NC
NC
Q35
1P
28
ZQ
A
NC
NC
A
A
NC
NC
NC
NC
NC
29
NC
NC
D13
10G
65
30
NC
NC
Q13
9G
66
NC
Q9
Q18
2B
102
A
3R
31
NC
Q5
Q5
11F
67
NC
D9
D18
3B
103
A
4R
32
NC
D5
D5
11G
68
NC
NC
D27
1C
104
A
4P
33
NC
NC
D14
9F
69
NC
NC
Q27
1B
105
A
5P
34
NC
NC
Q14
10F
70
NC
Q10
Q19
3D
106
A
5N
35
Q2
Q6
Q6
11E
71
NC
D10
D19
3C
107
A
5R
36
D2
D6
D6
10E
72
NC
NC
D28
1D
Data Sheet M15824EJ7V1DS
21
µPD44165082, 44165182, 44165362
JTAG Instructions
Instructions
EXTEST
Description
The EXTEST instruction allows circuitry external to the component package to be tested. Boundaryscan register cells at output pins are used to apply test vectors, while those at input pins capture test
results. Typically, the first test vector to be applied using the EXTEST instruction will be shifted into the
boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of EXTEST,
the output driver is turned on and the PRELOAD data is driven onto the output pins.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in
capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The
IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed
in the test-logic-reset state.
BYPASS
The BYPASS instruction is loaded in the instruction register when the bypass register is placed between
TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the
board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE / PRELOAD
SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction.
When the SAMPLE /
PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture-DR
state loads the data in the RAMs input and Q pins into the boundary scan register. Because the RAM
clock(s) are independent from the TAP clock (TCK) it is possible for the TAP to attempt to capture the
I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing
the TAP to sample metastable input will not harm the device, repeatable results cannot be expected.
RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus
hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except
capturing the I/O ring contents into the boundary scan register. Moving the controller to shift-DR state
then places the boundary scan register between the TDI and TDO pins.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM Q pins are forced to an inactive
drive state (high impedance) and the boundary register is connected between TDI and TDO when the
TAP controller is moved to the shift-DR state.
JTAG Instruction Coding
IR2
IR1
IR0
Instruction
0
0
0
EXTEST
0
0
1
IDCODE
0
1
0
SAMPLE-Z
0
1
1
RESERVED
1
0
0
SAMPLE / PRELOAD
1
0
1
RESERVED
1
1
0
RESERVED
1
1
1
BYPASS
Note 1. TRISTATE all Q pins and CAPTURE the pad values into a SERIAL SCAN LATCH.
22
Data Sheet M15824EJ7V1DS
Note
1
µPD44165082, 44165182, 44165362
TAP Controller State Diagram
1
Test-Logic-Reset
0
1
0
1
Run-Test / Idle
1
Select-DR-Scan
Select-IR-Scan
0
0
1
1
Capture-DR
Capture-IR
0
0
0
Shift-DR
0
Shift-IR
1
1
1
1
Exit1-DR
Exit1-IR
0
0
0
Pause-DR
0
Pause-IR
1
1
0
0
Exit2-DR
Exit2-IR
1
1
Update-DR
1
Update-IR
0
1
0
Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal
operation of the device, TCK must be tied to VSS to preclude mid level inputs.
TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and
may be left unconnected. But they may also be tied to VDD through a 1 kΩ resistor.
TDO should be left unconnected.
Data Sheet M15824EJ7V1DS
23
24
Test Logic Operation (Instruction Scan)
TCK
Run-Test/Idle
Update-IR
Exit1-IR
Shift-IR
Exit2-IR
Pause-IR
Exit1-IR
Shift-IR
Capture-IR
TDI
µPD44165082, 44165182, 44165362
New Instruction
IDCODE
Instruction
Register state
Select-IR-Scan
Select-DR-Scan
Run-Test/Idle
Output Inactive
TDO
Test-Logic-Reset
Controller
state
Data Sheet M15824EJ7V1DS
TMS
Test Logic (Data Scan)
TCK
Test-Logic-Reset
Select-IR-Scan
Select-DR-Scan
Run-Test/Idle
Update-DR
Exit1-DR
Shift-DR
Exit2-DR
Pause-DR
Exit1-DR
Shift-DR
TDI
25
µPD44165082, 44165182, 44165362
Output Inactive
IDCODE
Instruction
Instruction
Register state
Capture-DR
Select-DR-Scan
TDO
Run-Test/Idle
Controller
state
Data Sheet M15824EJ7V1DS
TMS
µPD44165082, 44165182, 44165362
Package Drawing
165-PIN PLASTIC BGA (13x15)
E
w S B
ZD
ZE
B
11
10
9
8
7
6
5
4
3
2
1
A
D
R PMM L K J H G F E D C BA
w S A
INDEX MARK
A
y1
A2
S
S
y
e
S
A1
(UNIT:mm)
φb
φx
M
S AB
ITEM
D
DIMENSIONS
13.00±0.10
E
15.00±0.10
w
0.15
e
1.00
A
1.40±0.11
A1
0.40±0.05
A2
1.00
b
0.50±0.05
x
0.08
y
0.10
y1
0.20
ZD
1.50
ZE
26
Data Sheet M15824EJ7V1DS
0.50
P165F5-100-EQ1
µPD44165082, 44165182, 44165362
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products.
Types of Surface Mount Devices
µPD44165082F5-EQ1: 165-pin PLASTIC BGA (13 x 15)
µPD44165182F5-EQ1: 165-pin PLASTIC BGA (13 x 15)
µPD44165362F5-EQ1: 165-pin PLASTIC BGA (13 x 15)
Data Sheet M15824EJ7V1DS
27
µPD44165082, 44165182, 44165362
Revision History
Edition/
Date
7th edition/
Page
Type of
This
Previous
edition
edition
p.12
p.12
Location
Description
(Previous edition → This edition)
revision
Modification DC Characteristics IDD (MAX.)
Feb. 2004
MAX.
Unit
x8, x18
x36
-E50
560
670
-E60
480
-E75
420
MAX.
Unit
x8, x18
x36
-E50
610
700
570
-E60
530
600
500
-E75
470
530
mA
mA
DC Characteristics ISB1 (MAX.)
MAX.
x8, x18
p.26
28
p.26
-E50
210
-E60
-E75
Unit
MAX.
x36
x8, x18
-E50
270
190
-E60
250
170
-E75
230
Modification Package Drawing
Data Sheet M15824EJ7V1DS
mA
Unit
x36
mA
Preliminary version → Standardized version
µPD44165082, 44165182, 44165362
[MEMO]
Data Sheet M15824EJ7V1DS
29
µPD44165082, 44165182, 44165362
[MEMO]
30
Data Sheet M15824EJ7V1DS
µPD44165082, 44165182, 44165362
NOTES FOR CMOS DEVICES
1
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed,
and also in the transition period when the input level passes through the area between VIL (MAX) and
VIH (MIN).
2
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND
via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must
be judged separately for each device and according to related specifications governing the device.
3
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred.
Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded.
The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
4
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
Data Sheet M15824EJ7V1DS
31
µPD44165082, 44165182, 44165362
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor,
Renesas, IDT, Micron Technology, Inc., NEC Electronics, and Samsung.
• The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
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redundancy, fire-containment and anti-failure features.
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
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"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1