NTE2389 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Ratings Drain–Source Breakdown Voltage BVDSS ID = 0.25mA, VGS = 0 60 – – V Gate Threshold Voltage VGS(th) ID = 1mA, VDS = VGS 2.1 3.0 4.0 V TJ = +25°C – 1 10 µA TJ = +125°C – 0.1 1.0 mA VGS = ±30V, VDS = 0 – 10 100 nA RDS(on) ID = 20A, VGS = 10V – 40 45 mΩ – mhos Zero Gate Voltage Drain Current Gate–Source Leakage Current Drain–Source On–State Resistance IDSS IGSS VDS = 60V, VGS = 0 Dynamic Ratings Forward Transconductance gfs ID = 20A, VDS = 25V 8 13.5 Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz – 1650 2000 pF Output Capacitance Coss – 560 750 pF Reverse Transfer Capacitance Crss – 300 400 pF Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 25 40 ns – 60 90 ns td (off) – 125 160 ns tf – 100 130 ns Measured from contact screw on tab to center of die – 3.5 – nH Measured from drain lead 6mm from package to center of die – 4.5 – nH Measured from source lead 6mm from package to source bond pad – 7.5 – nH IDR – – 41 A Pulsed Reverse Drain Current IDRM – – 164 A Diode Forward On–Voltage VSD IF = 41A, VGS = 0 – 1.4 2.0 V IF = 41A, VGS = 0, VR = 30V –diF/dt = 100A/µs – 60 – ns – 0.3 – µC Dynamic Ratings (Cont’d) Turn–On Time td (on) tr Turn–Off Time Internal Drain Inductance Ld Internal Source Inductance Ls VCC = 30V, VGS = 10V, ID = 3A, RGS = 50Ω Ω Reverse Diode Continuous Reverse Drain Current Reverse Recovery Time trr Reverse Recovery Charge Qrr .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Gate .100 (2.54) .500 (12.7) Min Source Drain/Tab