NTE NTE2638

NTE2638
Silicon NPN Transistor
Darlington
Features:
D High Voltage, High Forward and Clamped Reverse Energy
D 10A Peak Collector Current
D 80W at +25°C Case Temperature
D Collector–Emitter Sustaining Voltage: 400V Min at 7A
Absolute Maximum Ratings: (TC = +25°C unless otherwise specifieid)
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Continuous Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/°C
Continuous Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Linearly to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Typical Thermal Resistance, Case–to–Heat Sink (Note 2), RthCHS . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Lead Temperature (During Soldering, 1/8” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. This value applies for tw ≤ 5ms, duty cycle ≤ 10%.
Note 2. This parameter is measured using 0.003” (0.08mm) mica insulator with Dow–Corning 11
compound on both sides of the insulator, a 0.138–32 (formally 6–32) mounting screw with
bushing, and a mounting torque of 8 in•lb (0.9 n•m).
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0, Note 3
400
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
400
–
–
V
Collector–Emitter Sustaining Voltage
VCEX(sus)
400
–
–
V
IC = 7A
Collector Cutoff Current
ICEO
VCE = 400V, IB = 0
–
–
250
µA
Emitter Cutoff Current
IEBO
VEB = 8V, IC = 0
–
–
15
mA
DC Current Gain
hFE
IC = 2.5A, VCE = 5V, Note 3, Note 4
150
–
–
IC = 5A, VCE = 5V, Note 3, Note 4
50
–
–
IC = 7A, VCE = 5V, Note 3, Note 4
15
–
–
IB = 100mA, IC = 2A, Note 3, Note 4
–
–
2.2
V
IB = 250mA, IC = 5A, Note 3, Note 4
–
–
2.3
V
IB = 10mA, IC = 1A, Note 3, Note 4
–
–
1.5
V
IB = 100mA, IC = 2A, Note 3, Note 4
–
–
1.5
V
IB = 250mA, IC = 5A, Note 3, Note 4
–
–
2.0
V
–
–
3.5
V
Base–Emitter Voltage
Collector–Emitter Saturation
Voltage
VBE
VCE(sat)
Diode Forward Voltage
VF
IF = 7A, Note 3, Note 4
Small–Signal Current Gain
hfe
VCE = 5V, IC = 500mA, f = 1kHz
200
–
–
Small–Signal Forward Current
Transfer Ratio
|hfe|
VCE = 5V, IC = 500mA, f = 1kHz
10
–
–
Collector Capacitance
Cobo
IE = 0, VCB = 10V, f = 1MHz
–
–
100
pF
–
3400
–
ns
–
1520
–
ns
Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Turn–Off Storage Time
ts
Turn–Off Fall Time
tf
Turn–Off Rise Time
tr
–
160
–
ns
Turn–On Delay Time
td
–
20
–
ns
–
3900
–
ns
–
4700
–
ns
IC = 5A, IB1 = 250mA,
IB2 = –250mA, VBE(off) = –7.3V,
RL = 50Ω, Note 5
Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Voltage Storage Time
tsv
Current Storage Time
tsi
Voltage Rise Time
trv
–
1200
–
ns
Storage Rise Time
tri
–
1200
–
ns
Turn–Off Crossover Time
txo
–
2000
–
ns
V(clamp) = Min VCEX(sus), ICM = 5A,
IB1 = 250mA, IB2 = –250mA,
Note 5
Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle ≤ 2%.
Note 4. These parameters are measured with voltage–sensing contacts separate from the current–
carrying contacts located within 1/8” (3.2mm) from the device body.
Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
C
B
E
.420 (10.67)
Max
.110 (2.79)
C
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector