NTE NTE3101

NTE3101
Photon Coupled Interrupter Module
NPN Darlington Output
Description:
The NTE3101 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon
Darlington connected phototransistor in a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. The
gap in the housing provides a means of interrupting the signal with an opaque material, switching the
output from “ON” into an “OFF” state.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Infrared Emitting Diode
Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/°C
Forward Current, IF
Continuos . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width ≤ 1µs, PRR ≤ 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Phototransistor
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/°C
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V
Emitter–Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Total Device
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Lead Temperature (During Soldering, 5sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Emitter Characteristics
Reverse Breakdown Voltage
V(BR)R
IR = 10µA
6
–
–
V
Forward Voltage
VF
IF = 60mA
–
–
1.7
V
Reverse Current
IR
VR = 5V
–
–
100
nA
Capacitance
Ci
V = 0, f = 1MHz
–
30
–
pF
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
Electrical Characteristics (Cont’d): (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Detector Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
55
–
–
V
Emitter–Collector Breakdown Voltage
V(BR)ECO IE = 100µA
6
–
–
V
Collector Dark Current
ICEO
VCE = 45V
–
–
100
nA
Capacitance
Cce
VCE = 5V, f = 1MHz
–
3.3
5.0
pF
ICE(on)
VCE = 5V, IF = 5mA
0.15
–
–
mA
VCE = 5V, IF = 20mA
1.0
–
–
mA
VCE = 5V, IF = 30mA
1.9
–
–
mA
Coupled Characteristics
Collector ON Current
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1.8mA, IF = 30mA
–
–
0.4
V
Turn–On Time
ton
–
8
–
µs
Turn–Off Time
toff
VCC = 5V, IF = 30mA,
RL = 2.5kΩ
Ω
–
50
–
µs
Note 1. Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
1
.972 (24.69)
.750 (19.05)
+
D
E
+
D – Detector
E – Emitter
.129 (3.28) Max
.246 (6.25)
.136 (3.45) Min
Sensing Area
.122
(3.1)
.433 (11.0)
Max
Seating
Plane
.295 (7.49) Max
.315
(8.0)
.110 (2.79) Max