NTE3086 Optoisolator Dual NPN Transistor Output

NTE3086
Optoisolator
Dual NPN Transistor Output
Description:
The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.
Features:
D Two isolated Channels per Package
D 7500V Withstand Test Voltage
D CTR Minimum: 20%
Absolute Maximum Ratings:
Gallium Arsenide LED (Each Channel)
Power Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/5C
Forward Current, IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1 s, 300pps) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Phototransistor (Each Channel)
Power Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/5C
Collector−Emitter Breakdown Voltage, V(BR)CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector−Base Breakdown Voltage, V(BR)CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Collector Breakdown Voltage, V(BR)ECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Total Device
Power Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.33mW/5C
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1005C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering, 10sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2505C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gallium Arsenide LED
Forward Voltage
VF
IF = 20mA
−
1.1
1.5
V
Reverse Voltage
VR
IR = 10 A
3
25
−
V
Reverse Current
IR
VR = 3V
−
−
10
A
V = 0, f = 1MHz
−
80
−
pF
Junction Capacitance
Rev. 2−14
Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Phototransistor Detector
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 100 A, IF = 0
30
85
−
V
Emitter−Collector Breakdown Voltage
V(BR)ECO
IE = 100 A, IF = 0
6
13
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 10 A, IF = 0
80
−
−
V
Collector−Emitter Leakage Current
ICEO
VCE = 10V, IF = 0
−
5
100
nA
Collector−Emitter Capacitance
CCE
VCE = 0, IF = 0
−
8
−
pF
VCE(sat)
IC = 2mA, IF = 16mA
−
0.2
0.4
V
CTR
VCE = 10V, IF = 10mA
20
50
−
%
1500 2500
−
V
1011
1012
−
5
f = 1MHz
−
0.4
−
pF
BW
IC = 2mA, VCC = 10V, RL = 1005
−
150
−
kHz
Non−Saturated Rise Time, Fall Time
tr, tf
VCC = 10V, IC = 2mA, RL = 1005 ,
Note 1
−
2.4
−
s
Non−Saturated Rise Time, Fall Time
tr, tf
VCC = 10V, IC = 2mA, RL = 1k5 ,
Note 1
−
15
−
s
Coupled Electrical Characteristics
Collector−Emitter Saturation Voltage
DC Current Transfer Ratio
Isolation Voltage
V(BR)(I−O) t = 1sec
Isolation Resistance
R(I−O)
Input to Output Capacitance
Bandwidth
VI−O = 500V
Switching Times
Saturated Turn−On Time
(From 5V to 0.8V)
ton(sat)
RL = 2k5 , IF = 40mA
−
5
−
s
Saturated Turn−Off Time
(From Saturation to 2V)
toff(sat)
RL = 2k5 , IF = 40mA
−
25
−
s
Note 1. The frequency at which IC is 3dB down from the 1kHz value.
Anode
1
8 Emitter
Cathode
2
7 Collector
Cathode
3
6 Collector
Anode
4
5 Emitter
8
5
.250
(6.35)
1
4
.390 (9.9) Max
.185
(4.7)
Max
Seating
Plane
.100 (2.54)
.115 (2.94) Min
NOTE: Pin1 locator dot is for reference ONLY.
For additional Pin1 location options, click here.