NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –60° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit µA Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 0.2 DC Current Gain hFE VCE = 10V, IC = 2mA 20 60 200 fT VCE = 10V, IE = –2mA 400 530 – MHz Current–Gain Bandwidth Product Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz – 0.5 1.0 pF Noise Figure NF IE = –2mA, f = 200MHz – 2.5 3.3 dB Power Gain PG IE = –2mA, f = 200MHz 20 23 – dB AGC Current IAGC PG = –30dB – –9 –11 mA .157 (4.0) Base Emitter Collector .026 (0.66) .079 (2.02) Max .008 (0.20) .150 (3.81) Dia Max