Description The PerkinElmer family of large-area InGaAs PIN photodiodes provide high responsivity from 800 nm to 1700 nm for applications Large-Area InGaAs Photodiodes C30619, C30641, C30642, C30665 EVERYTHING IN A including optical power meters, fiber optic test NEW equipment, near-IR spectoscopy and instrumentation. All devices are planar LIGHT. passivated and feature low capacitance for extended bandwidth, and high shunt resistance for maximum sensitivity. Typical devices feature <1% non-linearity to optical powers >+13 dBm (20 mW), and uniformity within ±2% across the detector active area. Typical responsivity of 0.2 A/W at 850 nm for our large-area InGaAs devices allows use of a single detector in fiber optic test instrumentation designed to operate at 850, 1300, and 1550 nm. Features Devices are available with active areas from • 0.5, 1.0, 2.0, and 3.0 mm diameters 0.5 mm to 3.0 mm in TO-type packages or on • High responsivity from 850 nm to 1550 nm thermoelectric coolers for increased sensitivity • High shunt resistance, low dark current (see below). Photodiodes can also be • TE-cooled package options mounted on customized ceramic sub-mounts • Low capacitance for fast response times to suit specific application requirements. PerkinElmer Optoelectronics Canada is Applications qualified to ISO-9001 and operates to MIL-Q9858A and AQAP-1 quality standards. All devices undergo extended life-test and periodic process qualification programs to assure high reliability. In addition, all production devices are sourced from a qualified wafer, screened with a 16 hour, 200°C burn-in at -10V bias (C30619 and C30641) or -5V (C30642 and C30665), and tested to meet responsivity, spectral noise, capacitance, shunt resistance and dark current specifications. • Power meters • Fiber identifiers • Laser burn-in racks • Near infrared instrumentation • F.T.I.R. spectroscopy C30619, C30641, C30642, C30665 Package Options TE-Cooled Devices: Large-area detectors are available Detector and Pre-Amplifier: Large-area InGaAs detectors are mounted on a 1-stage or 2-stage thermoelectric (TE) cooler. also available integrated with a preamplifier and TE-cooler. The Cooling increases shunt resistance (see Figure 2) thereby HTE-series features large-area InGaAs detectors with a high reducing noise for increased sensitivity. Typical detector gain hybrid transimpedence amplifier mounted on a 2-stage TE temperature is -10°C with a 1-stage TE cooler or -35°C cooler. TE-cooling maximizes sensitivity and stabilizes op-amp using a 2-stage cooler. A TE-cooler option can be specified offset and output characteristics. This provides an easy-to-use by adding the extension -TC (1-stage cooler) or -DTC (2- high sensitivity detector platform optimized for good temperature stage cooler) to the standard part number (see ordering stability over a wide operating temperature range. More guide). More information is available from the "TC-Series information is available from the HTE-series datasheet. The Cooled Photodiodes" datasheet from PerkinElmer standard HTE-2642 incorporates a C30642E chip. Optoelectronics Canada. Specifications (at VR = VOP (typical), 22°C) Parameter Min C30619 Typ Active Diameter Responsivity At 850 nm 0.10 At 1300 nm 0.80 At 1550 nm 0.85 Shunt Resistance (VR = 10 mV) 1 10 Dark Current Spectral Noise Current (10 kHz, 1.0 Hz) Capacitance At VR = 0V At VR = VOP Bandwidth (-3 dB, RL = 50Ω) Linearity 2 Available package types 0.5 0.20 0.90 0.95 250 1 0.02 20 8 350 > +13 D2, D14 Max Min 0.10 0.80 0.85 5 20 0.10 25 10 C30641 Typ 1.0 0.20 0.90 0.95 50 5 0.04 100 40 75 > +13 D2, D14 Units Max 50 0.15 125 50 mm A/W A/W A/W MΩ nA pA/√Hz pF pF MHz dBm - Operating Ratings Parameter Operating Voltage Breakdown Voltage Maximum Forward Current Maximum Photocurrent Power Dissipation Storage Temperature Operating Temperature Min C30619 Typ 0 20 5 80 -60 -40 Max Min C30641 Typ 10 0 20 2 80 10 100 100 125 85 -80 -40 Units Max 5 10 100 100 125 85 Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ). V V mA mA mW °C °C C30619, C30641, C30642, C30665 Figure 2. Typical Shunt Resistance as a Function of Temperature. Figure 1. Typical Responsivity vs. Wavelength. Specifications (at VR = VOP (typical), 22°C) Parameter Min Active Diameter Responsivity At 850 nm 0.10 At 1300 nm 0.80 At 1550 nm 0.85 Shunt Resistance (VR = 10 mV) 1 2 Dark Current Spectral Noise Current (10 kHz, 1.0 Hz) Capacitance At VR = 0V At VR = 2.0V (typical) Bandwidth (-3 dB, RL = 50Ω) Linearity 2 Available package types C30642 Typ 2.0 0.20 0.90 0.95 25 103 0.03 300 150 20 +11 D15 Max Min 0.10 0.80 0.85 1 0.15 500 C30665 Typ 3.0 0.20 0.90 0.95 10 253 0.04 1000 400 3.0 +11 D15 Units Max 0.20 1250 mm A/W A/W A/W MΩ nA pA/√Hz pF pF MHz dBm - Operating Ratings Parameter Operating Voltage Breakdown Voltage Maximum Forward Current Maximum Photocurrent Power Dissipation Storage Temperature Operating Temperature Min C30642 Typ 15 0 50 -60 -40 Max Min C30665 Typ 10 0 50 5 10 100 250 125 85 -80 -40 Units Max 5 10 100 250 125 85 Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR = VOP (typ). Note 3. At VR = 2.0V V V mA mA mW °C °C C30619, C30641, C30642, C30665 Figure 3. Typical Capacitance vs. Operating Voltage. Wavelength (nm) 850 1060 1300 1550 1650 Figure 4. Typical Dark Current vs. Operating Voltage. Temperature Coefficient1 (%/°C) -0.121 0.039 0.012 0.009 (20°C to 85°C) 0.085 (-40°C to 20°C) 1.287 Note1: Measured from -40°C to +85°C except 1650nm, as indicated. Figure 5. Typical Responsivity Temperature Coefficients. Figure 6. Typical Responsivity Scan of a 1mm Photodiode. Figure 7. Package D2: TO-18 Low Profile with Silicon Window. To special order. Figure 8. Package D-14: TO-18 with Glass Window. C30619, C30641, C30642, C30665 Figure 9. Package D15: TO-5 with Glass Window. Ordering Guide C30 # # # L - X X X TE-Cooler Option: TC: DTC: 1-stage TE cooler 2-stage TE cooler (Not yet available for C30665) Window Option: E: G: Silicon Glass (See below for availability) Chip Type: 619: 641: 642: 665: 0.5mm diameter 1.0mm diameter 2.0mm diameter 3.0mm diameter Device Package Availability Window Option Window Type C30619 E G Silicon Glass D21 D14 Package Type C30641 C30642 C30665 D21 D14 D15 D15 Note 1: Special Order For more information e-mail us at [email protected] or visit our web site at www.perkinelmer.com/opto All values are nominal; specifications subject to change without notice. ©2000 PerkinElmer, Inc. All rights reserved. 0700 is a registered trademark of PerkinElmer, Inc. PerkinElmer Optoelectronics 22001 Dumberry Road, Vaudreuil, Québec Canada J7V 8P7 Phone: (450) 424-3300 Fax: (450) 424-3411