BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1999, Power Innovations Limited, UK ● Designed for Self Oscillating Inverter Applications ● Rugged 1500 V Planar Construction ● Integral Free-Wheeling Anti-Parallel Diode MAY 1999 - REVISED SEPTEMBER 1999 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA device symbol C B E absolute maximum ratings at 25°C case temperature (unless otherwise noted) SYMBOL VALUE UNIT Collector-emitter voltage (IB = 0) RATING VCEO 700 V Collector-emitter voltage (VBE = 0) VCES 1500 V Emitter-base voltage (IC = 0) VEBO 11 V A IC 2 ICM 2.5 A IB 2 A Peak base current (see Note 1) IBM 2.5 A Continuous device dissipation at (or below) 25°C case temperature Ptot 50 W °C Continuous collector current Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE Tj -55 to +125 Tstg -55 to +150 °C TL 300 °C 1: This value applies for tp = 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 electrical characteristics at 25°C case temperature PARAMETER VCEO VCBO VEBO ICEO ICES IEBO VBE(sat) VCE(sat) hFE TEST CONDITIONS Collector-emitter voltage Collector-base voltage Emitter-base Collector cut-off current Collector-emitter cut-off current Emitter cut-off current Base-emitter saturation voltage TYP MAX UNIT IC = 1 mA 700 V IC = 100 µA 1500 V 11 V IEB = voltage MIN 1 mA VCE = 700 V IB = 0 100 µA VCE = 1500 V VBE = 0 100 µA VEB = 11 V IC = 0 1 mA IB = 100 mA IC = 500 mA IB = 100 mA IC = 1 A IB = 400 mA IC = 2 A 1.0 (see Notes 2 and 3) 1.1 V 1.2 Collector-emitter IB = 50 mA IC = 250 mA saturation voltage IB = 100 mA IC = 500 mA VCE = 5 V IC = 10 mA 10 21 Forward current VCE = 5 V IC = 100 mA 10 25 transfer ratio VCE = 5 V IC = 250 mA 10 25 VCE = 5 V IC = 500 mA 7 18 (see Notes 2 and 3) (see Notes 2 and 3) 0.3 1.2 0.7 3.0 V NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics PARAMETER RθJA Junction to free air thermal resistance RθJC Junction to case thermal resistance MIN TYP MAX UNIT 62.5 °C/W 2 °C/W MAX UNIT resistive switching characteristics at 25°C case temperature PARAMETER Delay time tr Rise time IC = 500 mA IB(on) = 50 mA ts Storage time VCC = 125 V IB(off) = 250 mA tf Fall time PRODUCT 2 TEST CONDITIONS td INFORMATION MIN TYP 0.1 µs tp = 300 µs 0.6 µs Duty cycle = 2% 1.0 µs 0.2 µs BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT R3636CHF 100 hFE - Forward Current Transfer Ratio VCE = 5 V TC = 125°C TC = 25°C TC = 0°C 10 1·0 0·01 0·1 1·0 10 IC - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 MAXIMUM REVERSE-BIAS SAFE OPERATING AREA R3636CFB 3 1·0 0·1 R3636CRB IB(on) = IC / 10 VBE(off) = -5 V TC = 25°C IC - Collector Current - A IC - Collector Current - A TC = 25°C 2 1 tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 2. PRODUCT 0 0 200 400 600 800 1000 1200 1400 1600 VCE - Collector-Emitter Voltage - V Figure 3. INFORMATION 3 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 6,6 6,0 15,32 14,55 18,0 TYP. 6,1 5,6 1,47 1,07 0,97 0,66 1 2 14,1 12,7 3 2,74 2,34 5,28 4,68 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 4 INFORMATION 0,64 0,41 2,90 2,40 BUPD1520 NPN SILICON TRANSISTOR WITH INTEGRATED DIODE MAY 1999 - REVISED SEPTEMBER 1999 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1999, Power Innovations Limited PRODUCT INFORMATION 5