TICP206 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK MARCH 1988 - REVISED MARCH 1997 ● 1.5 A RMS ● Glass Passivated Wafer ● 400 V to 600 V Off-State Voltage MT2 ● Max IGT of 10 mA MT1 ● Package Options LP PACKAGE (TOP VIEW) G 1 2 3 MDC2AA PACKAGE PACKING PART # SUFFIX LP Bulk (None) LP with fomed leads Tape and Reel R LP PACKAGE WITH FORMED LEADS (TOP VIEW) G 1 2 3 MT2 MT1 MDC2AB absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL TICP206D Repetitive peak off-state voltage (see Note 1) TICP206M VALUE 400 VDRM UNIT V 600 IT(RMS) 1.5 A Peak on-state surge current full-sine-wave (see Note 3) ITSM 10 A Peak on-state surge current half-sine-wave (see Note 4) ITSM 12 A Peak gate current IGM ±0.2 A P G(AV) 0.3 W Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) Average gate power dissipation at (or below) 85°C case temperature (see Note 5) Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at the rate of 60 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 5. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM IGTM VGTM MIN TEST CONDITIONS Repetitive peak offstate current VD = rated VDRM IG = 0 TYP MAX UNIT ±20 µA Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 8 Peak gate trigger V supply = +12 V† RL = 10 Ω tp(g) > 20 µs -8 current V supply = -12 V† RL = 10 Ω tp(g) > 20 µs -8 V supply = -12 V† RL = 10 Ω tp(g) > 20 µs 10 Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 2.5 Peak gate trigger V supply = +12 V† RL = 10 Ω tp(g) > 20 µs -2.5 voltage V supply = -12 V† RL = 10 Ω tp(g) > 20 µs -2.5 V supply = -12 V† RL = 10 Ω tp(g) > 20 µs 2.5 mA V † All voltages are with respect to Main Terminal 1. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER Peak on-state VTM MIN TEST CONDITIONS ITM = ±1 A voltage IH Holding current IL Latching current IG = 50 mA TYP (see Note 6) MAX UNIT ±2.2 V Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 30 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -30 Vsupply = +12 V† Vsupply = -12 V† mA 40 (see Note 7) mA -40 † All voltages are with respect to Main Terminal 1. NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz. TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE vs GATE TRIGGER CURRENT vs TEMPERATURE TEMPERATURE TC05AA 1000 VAA = ± 12 V RL = 10 Ω 100 + + - + + tp(g) = 20 µs VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA Vsupply IGTM 10 1 0·1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C Figure 1. PRODUCT 2 INFORMATION TC05AB 10 Vsupply IGTM VAA = ± 12 V + + - + } } + RL = 10 Ω tp(g) = 20 µs -40 -20 1 0·1 -60 0 20 40 60 80 TC - Case Temperature - °C Figure 2. 100 120 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS HOLDING CURRENT vs GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT CASE TEMPERATURE TC05AD 100 TC05AC 10 VGF - Gate Forward Voltage - V IH - Holding Current - mA VAA = ± 12 V IG = 0 Initiating ITM = 100 mA 10 1 Vsupply + - 0·1 -60 -40 -20 0 20 40 60 80 100 1 IA = 0 0·1 TC = 25 °C QUADRANT 1 0·01 0·0001 0·001 120 TC - Case Temperature - °C 0·01 0·1 1 IGF - Gate Forward Current - A Figure 3. Figure 4. LATCHING CURRENT vs CASE TEMPERATURE 100 VAA = ± 12 V IL - Latching Current - mA Vsupply IGTM + + - TC05AE + + 10 1 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - °C Figure 5. PRODUCT INFORMATION 3 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 Falls Within JEDEC TO-226AA Dimensions LP003 (TO-92) 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 Seating Plane 1,27 A) (see Note A) 12,7 MIN. 0,56 0,40 1 1,40 1,14 3 2 0,41 0,35 2,67 2,41 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: Lead dimensions are not controlled in this area. PRODUCT 4 INFORMATION MDXXAX TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LP003 (TO-92) 3-pin cylindical plastic package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. LP003 (TO-92) - Formed Leads Version LP003 Falls Within JEDEC TO-226AA Dimensions 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 4,00 MAX. 0,56 0,40 1 2 3 2,90 2,40 0,41 0,35 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAR PRODUCT INFORMATION 5 TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 MECHANICAL DATA LPR tape dimensions LP Package (TO-92) Tape (Formed Lead Version) 5,21 4,44 4,19 3,17 3,43 MIN. 2,67 2,03 2,67 2,03 5,34 4,32 4,00 MAX. 0,56 0,40 0,41 0,35 13,70 11,70 32,00 23,00 27,68 17,66 0,50 0,00 2,50 MIN. 16,50 15,50 11,00 8,50 9,75 8,50 2,90 2,40 2,90 2,40 19,00 5,50 19,00 17,50 ø 4,30 3,70 6,75 5,95 13,00 12,40 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXAS PRODUCT 6 INFORMATION TICP206 SERIES SILICON TRIACS MARCH 1988 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7