TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘1082 ● TO-220 PACKAGE (TOP VIEW) V(BO) A(T) 1 V V C(G) 2 - 58 - 82 B(R) 3 V(Z) Planar Passivated Junctions Low Off-State Current < 10 µA Pin 2 is in electrical contact with the mounting base. MDXXANA ● Rated for International Surge Wave Shapes STANDARD 8/20 µs ANSI C62.41 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45 0.2/310 µs 10/700 µs 10/1000 µs ● ITSP WAVE SHAPE A 150 RLM 88 38 FTZ R12 50 VDE 0433 50 CCITT IX K17/K20 50 REA PE-60 50 device symbol A(T) B(R) UL Recognized, E132482 C(G) description The TISP1082 is designed specifically for telephone line card protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B. Negative transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. Positive transients are clipped by diode action. PRODUCT These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 ITSP 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) A 38 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) 50 Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2) ITSM 10 A rms Initial rate of rise of on-state current, diT/dt 250 A/µs TJ 150 °C 0 to 70 °C Linear current ramp, Maximum ramp value < 38 A Junction temperature Operating free - air temperature range Storage temperature range Tstg -40 to +150 °C Lead temperature 1.5 mm from case for 10 s Tlead 260 °C NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature 2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has returned to thermal equilibrium. 3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting loaded current waveform is specified. . electrical characteristics for the A and B terminals, TJ = 25°C PARAMETER VZ ID Coff NOTE TEST CONDITIONS Reference zener MIN IZ = ± 1mA voltage Off-state leakage TYP ± 58 Off-state capacitance VD = 0 f = 1 kHz (see Note 4) UNIT V VD = ± 50 V current MAX 1 ± 10 µA 5 pF 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge. electrical characteristics for the A and C or the B and C terminals, TJ = 25°C PARAMETER VZ ∝ VZ TEST CONDITIONS Reference zener IZ = - 1mA voltage Temperature coefficient Breakover voltage (see Notes 5 and 6) Breakover current (see Note 5) Forward voltage IF = 5 A (see Notes 5 and 6) Peak on-state voltage IT = - 5 A (see Notes 5 and 6) Holding current (see Note 5) IH dv/dt ID Coff Critical rate of rise of off-state voltage Off-state leakage current Off-state capacitance MAX UNIT V %/oC 0.1 of reference voltage I(BO) VF TYP - 58 V(BO) VTM MIN - 0.15 - 2.2 - 82 V - 0.6 A 3 V -3 V - 150 mA (see Note 7) -5 kV/µs VD = - 50 V - 10 µA 500 pF VD = 0 f = 1 kHz (see Note 4) 300 NOTES: 5. These parameters must be measured using pulse techniques, tw = 100 µs, duty cycle ≤ 2%. 6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm (0.125 inch) from the device body. 7. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum).. PRODUCT 2 INFORMATION TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 PARAMETER MEASUREMENT INFORMATION Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND B Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A AND C OR B AND C† †Polarity is determined at terminal A or B with respect to C PRODUCT INFORMATION 3 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 thermal characteristics PARAMETER MIN TYP Junction to free air thermal resistance RθJA MAX UNIT 62.5 °C/W TYPICAL CHARACTERISTICS A and C, or B and C terminals ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES IT , IF - On-State Current, Forward Current - A VZ , V(BO) - Zener Voltage, Breakover Voltage - V TCR1LAA 1000 IF IT 100 10 IF IT 1 1 10 100 VT , VF - On-State Voltage, Forward Voltage - V Figure 3. PRODUCT 4 ZENER AND BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE INFORMATION TCR1LAB 85 80 75 VZ 70 V(BO) V(BO) 65 60 55 -25 VZ 0 25 50 75 100 TJ - Junction Temperature - °C Figure 4. 125 150 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS A and C, or B and C terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE TCR1LAC 1 10 I(BO) IH IH 0·1 I(BO) 0·01 -25 0 25 50 75 100 125 1 0·1 0·01 0·001 -25 150 TJ - Junction Temperature - °C 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 5. Figure 6. ON-STATE VOLTAGE & FORWARD VOLTAGE vs JUNCTION TEMPERATURE NORMALISED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT TCR1LAE 3.0 2.5 IT = -5A IF = 5A 2.0 VT 1.5 VF 1.0 TCR1LAI 2.00 Normalised Breakover Voltage VT , VF - On-State Voltage, Forward Voltage - V TCR1LAD VD = -50 V ID - Off-State Current - µA IH , I(BO) - Holding Current, Breakover Current - A HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE 1.75 1.50 1.25 0.5 0.0 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 7. PRODUCT 1.00 0·001 0·01 0·1 1 10 100 di/dt - Rate of Rise of Principle Current - A/µs Figure 8. INFORMATION 5 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS A and C, or B and C terminals PEAK DIODE FORWARD VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT OFF-STATE CAPACITANCE vs A OR B TERMINAL VOLTAGE (POSITIVE) TCR1LAJ 100 TCR1LAK 1000 Off-State Capacitance - pF Diode Forward Voltage Overshoot - V Third terminal = 0 to -50 V 75 50 25 0 0·001 0·01 0·1 1 10 100 0·01 100 di/dt - Rate of Rise of Principle Current - A/µs 0·1 A or B Terminal Voltage (Positive) - V Figure 9. Figure 10. OFF-STATE CAPACITANCE vs A OR B TERMINAL VOLTAGE (NEGATIVE) TCR1LAL 1000 Off State Capacitance - pF Third terminal = 0 to -50 V 100 10 1 10 A or B Terminal Voltage (Negative) - V Figure 11. PRODUCT 6 INFORMATION 100 1 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS A and B terminals ZENER VOLTAGE & BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE JUNCTION TEMPERATURE TCR1LAF 1 IH , I(BO) - Holding Current, Breakover Current - A 85 VZ , V(BO) - Zener Voltage, Breakover Voltage - V HOLDING CURRENT & BREAKOVER CURRENT vs 80 75 VZ 70 V(BO) V(BO) 65 VZ 60 55 -25 0 25 50 75 100 125 I(BO) IH IH 0·1 I(BO) 0·01 -25 150 TCR1LAG 0 25 TJ - Junction Temperature - °C 50 75 100 125 150 TJ - Junction Temperature - °C Figure 12. Figure 13. OFF-STATE CURRENT vs JUNCTION TEMPERATURE 10 TCR1LAH ID - Off-State Current - µA Vd = ± 50 V 1 0·1 0·01 0·001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - °C Figure 14. PRODUCT INFORMATION 7 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS A and B terminals OFF-STATE CURRENT OFF-STATE CAPACITANCE vsvs A OR B JUNCTION TERMINAL TEMPERATURE VOLTAGE (POSITIVE) NORMALISED BREAKDOWN VOLTAGES OFF-STATE CAPACITANCE vs vs A OR B TERMINAL VOLTAGE (NEGATIVE) JUNCTION TEMPERATURE TC2LAK TCR1LAM 100 10 TC2LAN TCR1LAN 10 VD =for ±50 V +50 V Only C= Normalised to V V(BR) Only for C = +50 I(BR) = 100 µA and 25°C Normalised Breakdown Voltages Off-State Capacitance - pF IDOff-State - Off-State Current - µA Capacitance - pF 1.2 10 1 1 0·1 0·01 0·001 0·1 1 -25 0 25 50 10 75 100 125 100 150 Both Polarities V(BR)M 1.1 1 V(BO) 1.0 V(BR) 0.9 0·1 1 -25 0 25 5010 100 125 - Junction Temperature - °C A orTB J Terminal Voltage (Negative) - V Figure 15. Figure 16. NORMALISED BREAKOVER VOLTAGE SURGE CURRENT vsvs RATE OF RISE OF PRINCIPLE DECAY TIME CURRENT TCR1LAO TC2LAG Maximum Surge Current -A Normalised Breakover Voltage 2.5 1000 2.0 100 1.5 1.010 0·001 2 0·01 10 0·1 1 100 10 di/dt - Rate of Rise of Principle Decay Time - µsCurrent - A/µs Figure 17. PRODUCT 8 75 - Junction Temperature - °C A or BTJTerminal Voltage (Positive) -V INFORMATION 100 1000 150 100 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 THERMAL INFORMATION MAXIMUM NON-RECURRENT 50Hz CURRENT vs CURRENT DURATION THERMAL RESPONSE TIR1LAA IRMS - Maxmimun Non-Recurrent 50Hz Current - A ZθJA - Transient Thermal Impedance - °C/W 100 10 1 0·1 0·0001 0·001 0·01 0·1 1 10 100 TCR1LAB 10 1 0·1 VGEN = 250 VRMS RGEN = 20 to 1000 ohms TAMB = 70°C 0·01 0·01 1000 0·1 t - Power Pulse Duration - s 1 10 100 t - Current Duration - s Figure 18. Figure 19. FREE AIR TEMPERATURE DERATING CURVE TIR1LAC Percent of Rated Power - % 100 80 60 40 20 0 25 50 75 100 125 150 TA - Free Air Temperature - °C Figure 20. PRODUCT INFORMATION 9 TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 10 INFORMATION MDXXBE TISP1082 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS NOVEMBER 1986 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 11