polyfet rf devices F1077 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 125 Watts Single Ended Package Style AM TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 250 Watts 0.7 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 12 A Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 125WATTS OUTPUT ) MAX 11 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.2 A, Vds = 28.0 V, F = 150 MHz % Idq = 1.2 A, Vds = 28.0 V, F = 150 MHz Relative Idq = 1.2 A, Vds = 28.0 V, F = 150 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdown Voltag 65 Idss Zero Bias Drain Curren 6 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat Saturation Curren Ciss Common Source Input Capacitanc Crss Common Source Feedback Capacitanc Coss Common Source Output Capacitanc UNITS V 1 TEST CONDITIONS Ids = 0.3 A, Vgs = 0V mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.6 A, Vgs = Vds 4.8 Mho Vds = 10V, Vgs = 5V 0.18 Ohm Vgs = 20V, Ids = 24 A 33 Amp Vgs = 20V, Vds = 10V 198 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 24 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1077 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1077 POUT VS PIN F=150 MHZ; IDQ=1.2A; VDS=28.0V F1B 6 DICE CAPACITANCE 180 15.00 160 14.00 140 13.00 120 12.00 1000 Ciss Coss 100 100 11.00 Efficiency = 60% 80 10.00 60 Crss 9.00 40 8.00 0 5 10 15 20 PIN IN WATTS 10 25 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1B 6 DICE IV CURVE F1B 6 DIE GM & ID vs VG 40 100 35 Id 30 25 10 20 15 10 Gm 1 5 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com