VISHAY GBPC12

GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
GBPC-W
FEATURES
GBPC
• UL recognition file number E54214
~
• Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
~
• Typical IR less than 0.3 μA
• High surge current capability
~
• Low thermal resistance
~
~
• Solder dip 260 °C, 40 s
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
12 A, 15 A, 25 A, 35 A
VRRM
50 V to 1000 V
IFSM
200 A, 300 A, 300 A, 400 A
IR
5 μA
VF
1.1 V
TJ max.
150 °C
Case: GBPC, GBPC-W
Epoxy meets UL 94 V-0 flammability rating
Terminals: Nickel plated on faston lugs or silver plated on
wire leads, solderable per J-STD-002 and JESD22-B102.
E4 suffix for consumer grade. Suffix letter “W” added to
indicate wire leads (e.g. GBPC12005W).
Polarity: As marked, positive lead by belevled corner
Mounting Torque: 20 inches-lbs. max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GBPC12, 15, 25, 35
UNIT
005
01
02
04
06
08
10
100
200
400
600
800
1000
V
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
12
GBPC12
Maximum average forward rectified
output current (Fig. 1)
Peak forward surge current single
sine-wave superimposed on rated load
Rating (non-repetitive, for t greater than
1 ms and less than 8.3 ms) for fusing
GBPC15
GBPC25
IF (AV)
25
GBPC35
35
GBPC12
200
GBPC15
GBPC25
IFSM
300
300
GBPC35
400
GBPC12
160
GBPC15
GBPC25
I2t
GBPC35
RMS isolation voltage from case to leads
Operating junction storage temperature range
Document Number: 88612
Revision: 28-Mar-11
15
375
375
A
A
A2s
660
VISO
2500
V
TJ, TSTG
- 55 to + 150
°C
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST
CONDITIONS
PARAMETER
Maximum instantaneous
forward drop per diode
GBPC12
IF = 6.0 A
GBPC15
IF = 7.5 A
GBPC25
IF = 12.5 A
GBPC35
IF = 17.5 A
Maximum reverse DC current at rated
DC blocking voltage per diode
TA = 25 °C
Typical junction capacitance per diode
4 V, 1 MHz
TA = 125 °C
GBPC12, 15, 25, 35
SYMBOL
UNIT
005
01
02
04
06
08
10
1.1
VF
V
5.0
IR
μA
500
300
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GBPC12, 15, 25, 35
PARAMETER
SYMBOL
UNIT
005
GBPC12 to GBPC25
Typical thermal resistance
GBPC35
01
02
04
06
08
10
1.9
RJC (1)
°C/W
1.4
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GBPC1206-E4/51
15.79
51
100
Paper box
GBPC1506-E4/51
15.79
51
100
Paper box
GBPC2506-E4/51
15.79
51
100
Paper box
GBPC3506-E4/51
15.79
51
100
Paper box
GBPC1206W-E4/51
13.8
51
100
Paper box
GBPC1506W-E4/51
13.8
51
100
Paper box
GBPC2506W-E4/51
13.8
51
100
Paper box
GBPC3506W-E4/51
13.8
51
100
Paper box
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For technical questions within your region, please contact one of the following:
Document Number: 88612
[email protected], [email protected], [email protected]
Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1000
Bridges Mounted on
9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate
35
30
Peak Forward Surge Current (A)
Average Forward Current (A)
40
5 x 6 x 4.9"
AL, Finned Plate
25
20
5 x 4 x 3"
AL, Finned Plate
15
6 x 2.2 x 2.2"
AL, Finned Plate
10
60 Hz
Resistive or
Inductive Load
5
100
GBPC12
GBPC15
GBPC25
10
0
25
50
75
100
125
150
175
200
10
1
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Maximum Output Rectified Current
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
GBPC35
RthSA = 0.5 °C/W
35
30
60 Hz
Resistive or
Inductive Load
Instantaneous Forward Current (A)
40
Average Forward Current (A)
GBPC35
1.0 Cycle
0
GBPC25
RthSA = 0.5 °C/W
25
20
GBPC15
RthSA = 1.0 °C/W
15
10
GBPC12
RthSA = 1.0 °C/W
5
0
10
20
30
40
50
60
70
80
90
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
TA = 25 °C
1
0.1
0.4
0
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Output Rectified Current
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
1000
80
70
Instantaneous Reverse Leakage
Current (µA)
Average Power Dissipation of Bridge (W)
TJ = TJ Max.
0.5 ms Single Sine-Wave
Capacitive Load
60
TJ = TJ Max.
50
40
Resistive or
Inductive Load
30
20
10
TA = 150 °C
TA = 125 °C
100
TA = 100 °C
10
1
TA = 25 °C
0.1
0
0
10
20
30
40
0
10
20
30
40
50
60
70
80
90
100
Average Output Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Power Dissipation
Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
Document Number: 88612
Revision: 28-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected]hay.com, [email protected]
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
1000
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
100
10
1
0.01
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
1
0.1
10
100
Reverse Voltage (V)
t - Heating Time (s)
Fig. 7 - Typical Junction Capacitance Per Diode
Fig. 8 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GBPC-W
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
1.135 (28.8)
1.115 (28.3)
0.24 (6.0)
0.18 (4.6)
0.042 (1.07)
0.038 (0.97)
DIA.
0.310 (7.87)
0.290 (7.36)
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GBPC
0.24 (6.0)
0.18 (4.6)
0.732 (18.6)
0.692 (17.6)
0.470 (11.9)
0.430 (10.9)
0.50 (12.7)
0.44 (11.7)
Hole for
#10 Screw
0.220 (5.59)
DIA.
0.200 (5.08)
0.672 (17.1)
0.632 (16.1)
0.672 (17.1)
0.632 (16.1)
1.135 (28.8)
1.115 (28.3)
AC
0.582 (14.8)
0.542 (13.8)
0.034 (0.86)
0.030 (0.76)
0.732 (18.6)
0.692 (17.6)
0.094 (2.4)
DIA.
1.25
(31.8)
MIN.
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.030 (0.76)
0.310 (7.62)
0.290 (7.36)
0.25
(6.35)
0.840 (21.3)
0.740 (18.8)
For technical questions within your region, please contact one of the following:
Document Number: 88612
[email protected], [email protected], [email protected]
Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
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Document Number: 91000
Revision: 11-Mar-11
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