SANKEN 2SC5249

2SC5249
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
A
IB
1.5
PC
35(Tc=25°C)
Tj
Tstg
µA
600min
V
hFE
VCE=4V, IC=1A
20 to 40
A
VCE(sat)
IC=1A, IB=0.2A
0.5max
W
VBE(sat)
IC=1A, IB=0.2A
1.2max
V
150
°C
fT
VCE=12V, IE=–0.3A
6typ
MHz
–55 to +150
°C
COB
VCB=10V, f=1MHz
50typ
pF
16.9±0.3
100max
3.9
V
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
200
200
1
10
–5
0.1
–0.1
1.0max
19max
1.0max
0
1
2
3
0
0.01
4
Collector-Emitter Voltage V C E (V)
0.05
h FE – I C Characteristics (Typical)
0.1
0.5
1
30
t o n • t s tg • t f (µ s)
25˚C
–55˚C
10
0.5
1
3
10
V C C 200V
5 I C :I B 1 :–I B2 =10:1:1
t on
tf
1
0.5
0.2
0.1
0.5
1
3
Tem
1
0.5
0.3
1
10
5
5
100
7
nk
Collect or Cur ren t I C (A)
si
0.05
10
at
0.05
10
20
he
0.1
ite
0.1
Without Heatsink
Natural Cooling
L=3mH
–IB2=–1.0A
Duty:less than 1%
fin
0.5
In
1
30
ith
Without Heatsink
Natural Cooling
P c – T a Derating
W
0.5
1000
35
µs
1
100
Time t(ms)
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
7
1.0
θ j-a – t Characteristics
Collector Current I C (A)
Collector Current I C (A)
Collecto r Cur ren t I C (A)
0.5
3
Ma xim um Powe r Dissipation P C ( W)
0.1
t s tg
Transient Thermal Resistance
100
Switching Ti me
DC Cur rent Gain h FE
125˚C
0.05
0
Base-Emittor Voltage V B E (V)
t on •t stg • t f – I C Characteristics (Typical)
200
5
0.01
p)
0
3
(V C E =4V)
50
1
Collector Current I C (A)
θ j- a (˚ C/W)
0
25˚C (Case Temp)
–55˚C (Case Temp)
se
I B =20mA
125˚C (Case Temp)
2
(Ca
50mA
1
I C / I B =5 Const.
˚C
100m A
(V C E =4V)
3
0.5
125
2
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
Collector-Emitter Saturation Voltage V C E (s at) (V )
Collector Current I C (A)
200 mA
2.4±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B C E
VCE(sat)–IC Characteristics (Typical)
300mA
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.2±0.2
VCC
(V)
3
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
ø3.3±0.2
a
b
)
3(Pulse6)
IC
VEB=7V
IC=10mA
Temp
V(BR)CEO
4.2±0.2
2.8 c0.5
(Case
IEBO
V
10.1±0.2
–55˚C
V
7
µA
4.0±0.2
600
VEBO
100max
0.8±0.2
VCEO
VCB=600V
±0.2
ICBO
Unit
mp)
V
2SC5249
e Te
600
External Dimensions FM20(TO220F)
(Ta=25°C)
Conditions
(Cas
VCBO
Symbol
25˚C
Unit
8.4±0.2
■Electrical Characteristics
2SC5249
Symbol
13.0min
■Absolute maximum ratings (Ta=25°C)
Application : Switching Regulator and General Purpose
10
Without Heatsink
50
100
Collector-Emitter Voltage V C E (V)
500
50
100
Collector-Emitter Voltage V C E (V)
500
2
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
131