IGBT MODULE GAE75AA120 UL;E76102 M SanRex IGBT Module GAE75AA120 is designed for high speed, high current switching applications. This Module is electrically isolated and contains IGBT connected with clamp diode in series, soft recovery diode (trr=0.1 s) reverse connected across IGBT. IC 75A VCES 1200V VCES sat 3.0V Typ t f 0.10 s Typ Soft recovery diode Applications Brake for motor control (VVVF) Unit mm Maximum Ratings Symbol Item Conditions VCES Collector-Emitter Voltage with gate terminal shorted to emitter VGES Gate-Emitter Voltage with collector shorted to emitter Ic ICP Ic PT Collector Current Unless otherwise Tj 25 Ratings GAE75AA120 DC Total Power Dissipation Tj Junction Temperature Tstg Storage Temperature VISO Isolation Voltage R.M.S. Mounting Torque 1200 V 20 75 V A 150 Pulse ms Reverse Collector Current Tc 25 Unit 75 A 600 W 150 A.C. minute 40 125 2500 Mounting 6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal 5 Recommended Value 1.5 2.5 15 25 Typical Value 2.7 28 210 Mass V N m kgf cm g Electrical Characteristics Symbol V Item IGES Gate Leakage Current VGE ICES Collector Cut-Off Current VCE 1200V VGE 0V BR CES Collector-Emitter Breakdown Voltage VGE 0V Ic VCE 10V Ic 7.5mA VGE th Gate Threshold Voltage VCE sat Collector-Emitter Saturation Voltage Input Capacitance Cies tr td on tf td off VECS trr Rth j-c VFM trr Rth j-c 55 Conditions Turn-on Delay Time Fall Time mA Reverse Recovery Time Thermal Resistance Forward Voltage Drop Reverse Recovery Time Thermal Impedance Typ. Max. 500 1.00 1200 Unit nA mA V 7.50 V Ic 75A VGE 15V 3.00 3.40 V VCE 10V VGE 0V f 1MHz 8.00 15.00 nF 0.10 0.25 0.20 0.35 0.10 0.35 0.25 0.30 2.50 3.50 0.15 0.25 Ic 75A VGE 15V/ 5V Vcc 600V RG 4.2 Turn-off Delay Time Emitter-Collector Voltage Min. 20V VCE 0V Rise Time Switching Time Ratings Ic 75A VGE 0V Ic 75A VGE IGBT-Case 10V di / dt 150A/ s 4.5 0.21 Diode-Case 0.60 s V s /W IF 75A, Clamp Diode 2.50 3.50 IF 75A di F/ dt Clamp Diode 0.15 0.25 s 0.60 /W 150A/ s, Clamp Diode V GAE75AA120 56 GAE75AA120 57