THYRISTOR MODULE（SINGLE PHASE BRIDGE TYPE） FSD20A30/60 UL:E76102 （M） FSD20A is a single phase bridge module consist of thyristors and diodes ● ID=20A, VRRM=600V Construction ● Highly reliable glass passivated chips 62.0 ● Easy 48.0 φ5.2×6.2 14.6±0.3 33.0 （Applications） Rectification (Bridge) Motor Drive 22.1±0.5 5.2 26.1±0.5 G1 − AC1 ＋ AC2 G2 G2 2.6 AC1 22.5max + G1 11.6 250TAB（t＝0.8） AC2 Unit：A - ■Maximum Ratings Symbol （Tj＝25℃ unless otherwise specified） Ratings Item FSD20A30 FSD20A60 Unit VRRM Repetitive Peak Reverse Voltage 300 600 V VDRM Repetitive Peak Off-State Voltage 300 600 V Symbol IT(AV) ITSM I2t Item Conditions Average On-State Current Single phase, half wave, 180°conduction, Tc：65℃ Surge On-State Current 1 ／2cycle, 50Hz/60Hz, peak value, non-repetitive I2t Ratings Unit 20 180/200 165 A A A2S PGM Peak Gate Power Dissipation 10 W PG（AV） Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Reverse) 5 V di／dt Critical Rate of On-State Current IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C.1minute Tj Operating Junction Temperature −30 to ＋125 ℃ Storage Temperature −30 to ＋125 ℃ 2.7（28） N･ｍ （㎏f･B） 66 g Tstg Mounting Torque（M5） Recommended Value 1.5-2.5（15-25） Mass 100 A /μs 2500 V ■Electrical Characteristics Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current, max. at VDRM, single phase, half wave, Tj＝125℃ 5 mA IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj＝125℃ 5 mA VTM Peak On-State Voltage, max. On-State Current 30A, Tj＝25℃ Inst. measurement IGT／VGT Gate Trigger Current/Voltage, max. Tj＝25℃，IT＝1A，VD＝6V VGD Non-Trigger Gate, Voltage. min. Tj＝125℃，VD＝1／2VDRM tgt Turn On Time, max. IT＝10A，IG＝100mA，Tj＝25℃，VD＝1／2VDRM，dIG/dt＝1A/μs dv／dt IH Critical Rate of Rise of Off-State Voltage, min. Holding Current, typ. Rth（j-c） Thermal Impedance, max. SanRex 1.5 V 40/1.2 0.2 mA/V V 10 μs 50 V/μs Tj＝25℃ 30 mA Junction to case 1.0 ℃/W Tj＝125℃, VD＝2／3VDRM, Exponential wave. ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] ; Gate Characteristics Average On-State Current（A） Peak Forward Gate Voltag（10V） １０１ Gate Voltage（V） On-State Voltage max ５ Av er ag ２ e Ga t Pe a Po k G we at r(1 e 0W ) e １００ Po we （ r 1W ） ５ 25℃ Tj＝125℃ −30℃ ２ ５00 １００ Maximum Gate Voltage that will not trigger any unit ５0 ２０ １０ −１ １０ １ １０ ５ ２ １０２ ２ １０３ ５ ２ ５ ０ ５ １． ０ Gate Current（mA） θ＝180゜ ６０ θ＝120゜ θ＝60゜ θ＝90゜ θ＝30゜ ３０ ２０ ０ 2π π θ １０ θ ３６０゜ θ：Conduction Angle ０ ０ １０ 60Hz １００ 50Hz ５０ Total Power Dissipation（W） ２０ ５ １０ ２０ ５０ ３６０゜ θ：Conduction Angle ９０ ８０ ７０ θ＝30゜ θ＝60゜θ＝90゜θ＝120゜ θ＝180゜ ６０ ０ ８０ Total Power Dissipation（W） １５０ 2π θ １００ １０ ３０ Ambient Temperature Vs Total Power Dissipation 7０ ６０ ５０ ４０ ３０ ２０ Rth 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 １０ ０ ０ １００ ２０ Output Current（A） ４０ ５０ ６０ ７０ ８０ ９０ １００ １１０ １２０ １３０ Time（cycles） Ambient Temperature（℃） Free Wheeling Diode Average On-State Current Vs Power Dissipation（Pulse Waving form） Free Wheeling Diode Averge On-State Current Vs Maximum Allowable Case Temperature（Pulse Waving form） θ＝180゜ １５ θ＝120゜ θ＝90゜ θ＝60゜ １０ θ＝30゜ ５ θ ３６０゜ θ：Conduction Angle ０ ０ ５ 10 Average Forward Current（A） 1５ Allowable Case Temperature（℃） Surge On-State Current（A） ２００ ２ ５． ０ π θ １１０ ２０ Per one element Tj＝25℃ ０ １２０ Surge On-State Current Rating （Non-Repetitive） ０ １ ４． ０ １３０ Output Current（A） ２５０ ３． ０ Output Current Vs Maximum Allowable Case Temperature（Single phase full bridge） Allowable Case Temperature（℃） Total Power Dissipation（W） 7０ ４０ ２． ０ On-State Voltage（V） Output Current Current Vs Total Power Dissipation ５０ Tj＝125℃ ２００ Peak Gate Current（3A） ２ FSD20A30/60 １３０ １２０ １１０ １００ θ ３６０゜ θ：Conduction Angle ９０ ８０ ７０ ６０ θ＝30゜ θ＝60゜θ＝90゜θ＝120゜θ＝180゜ ０ ０ ５ １０ Average Forward Current（A） １５