Ordering number:EN5579A N-Channel Silicon MOSFET FW211 DC-DC Converter Applications Features Package Dimensions · Low ON resistance. · 2.5V drive. unit:mm 2129 [FW211] 5 4 0.595 1.27 0.1 1.5 5.0 1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1 0.2 1.8max 1 6.0 4.4 0.3 8 0.43 Specifications SANYO:SOP8 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Symbol Conditions Ratings Unit VDSS VGSS Drain Current (DC) 20 V ±10 V 6 A ID Drain Current (pulse) IDP Allowable Power Dissipation Total Dissipation PD PT 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) 52 A 1.7 W Electrical Characteristics at Ta=25˚C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ max 20 Unit V VDS=20V, VGS=0 100 µA ±10 µA 1.3 V 27 35 mΩ 48 mΩ VGS=±8V, VDS=0 Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source ON-State Resistance RDS(on)1 ID=5A, VGS=4V RDS(on)2 Ciss ID=2A, VGS=2.5V 35 Input Capacitance VDS=10V, f=1MHz VDS=10V, f=1MHz 750 pF 520 pF 300 pF 20 ns Cutoff Voltage VDS=10V, ID=1mA VDS=10V, ID=5A 0.4 9 15 S Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=10V, f=1MHz See Specified Test Circuit tr See Specified Test Circuit 200 ns td(off) See Specified Test Circuit 150 ns tf See Specified Test Circuit 150 ns 30 nC 5 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=1A 7 IS=5A, VGS=0 1.0 nC 1.2 V SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61598TS (KOTO) TA-0861 No.5579-1/3 FW211 Switching Time Test Circuit 4V 0V VDD=10V VIN ID=5A RL=2Ω VIN PW=10µs D.C.≤1% D VOUT G FW211 P.G 50Ω S I D - VDS 3 2 6 ˚C 5 4 - 25 4 7 Ta = 1.5V 5 75˚C 8 25˚C 8V 6 I D - VGS VDS =10V 9 Drain Current, ID – A Drain Current, ID – A 7 10 6V 4 3V 2.5 V V 2V 8 3 2 1 1 VGS=1V 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.2 3 2 10 7 5 Ta =- ˚C 25 5˚C 2 ˚C 75 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 1.8 40 2A 30 20 10 1 2 3 4 5 6 7 8 9 10 0.9 1.0 I F - VSD 30 S =4V ID =5A,VG 1.0 7 5 3 2 5˚C 2.5V ,VGS = 3 2 0.1 7 5 Ta =7 Forward Current, IF – A Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ 50 3 2 10 0 -60 1.6 ID=5A 10 7 VGS=0 5 60 20 1.4 Gate-to-Source Voltage, VGS – V 70 ID =2A 1.2 50 0 0 2 3 5 7 100 R DS(on) - Tc 40 1.0 Tc=25˚C Drain Current, ID – A 80 0.8 R DS(on) - VGS 60 VDS=10V Static Drain-to-Source ON-State Resistance, RDS (on) – mΩ Forward Transfer Admittance, | yfs | – S | yfs | - I D 100 7 5 0.6 Gate-to-Source Voltage, VGS – V Drain-to-Source Voltage,VDS – V 25˚C 0.1 - 25˚C 0 0 0 0 -40 -20 0 20 40 60 80 Case Temperature, Tc – ˚C 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD – V No.5579-2/3 FW211 Ciss,Coss,Crss - VDS 10000 VDS=10V 9 ID =1A Gate-to-Source Voltage, VGS – V 7 Ciss,Coss,Crss – pF 5 3 2 1000 Ciss 7 5 Coss 3 Crss 2 VGS - Qg 10 f=1MHz 8 7 6 5 4 3 2 1 100 0 2 4 6 8 10 12 14 16 18 0 0 20 5 Drain-to-Source Voltage,VDS – V SW Time - I D 1000 Drain Current, ID – A 3 2 tr Switching Time, SW Time – ns 5 3 tf 2 td (of 100 f) 7 5 3 t d(on) 30 A S O ,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,, 10 I =6A 7 D 5 3 2 10 µs 10 0µ s 1m s 10m s 10 0m s DC 1.0 Operation in this 7 area is limited 5 by RDS(on). op era tio n 2 3 5 7 1.0 2 3 5 7 10 0.1 1unit 7 Mounted ceramic board (1000mm2 × 0.8mm) 5 2 3 5 7 10 2 3 5 7 1.0 2 Drain Current, ID – A P D (FET2) - P D (FET1) 2.0 M 1.4 ou nte 1.2 d ce ram 1.0 ic bo ard 0.8 (1 00 0m 0.6 m2 ×0 .8m m) 0.4 0.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 PD - 2.5 1.8 1.6 2 3 Drain-to-Source Voltage, VDS – V Allowable Power Disipation, PD – W Allowable Power Disipation, PD (FET2) – W 25 1pulse 10 7 0.1 0 20 3 2 Ta= 25˚C 2 0 15 100 7 I DP = 5 2 A 5 VDD =10V VGS=4V 7 10 Total Gate Charge, Qg – nC 1.8 Allowable Power Disipation, PD (FET 1) – W 2.0 Ta 2.0 1.7 1.5 To tal Di ss 1u 1.0 nit ip ati on 0.5 0 0 Mounted ceramic board (1000mm2 × 0.8mm) 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice. PS No.5579-3/3