Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions · Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact 2:Gate 3:Source 4:No Contact 5:Drain 6:Drain SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –60 V Gate-to-Source Voltage VGSS ±25 V –2 A Drain Current (DC) ID Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation PD Tc=25˚C PD Tch Mounted on ceramic board (750mm2×0.8mm) Channel Temperature Storage Temperature Tstg –8 A 8 W 2 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter D-S Breakdown Voltage G-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS V(BR)GSS IDSS Conditions Ratings min ID=–1mA, VGS=0 –60 IG=±100µs, VDS=0 VDS=–60V, VGS=0 ±2 5 typ max Unit V V –100 µA ±10 µA VGS=±20V, VDS=0 Forward Transfer Admittance IGSS VGS(off) | Yfs | Static Drain-to-Source ON-State Resistance RDS(on) ID=–1A, VGS=–10V 300 400 mΩ RDS(on) 450 650 mΩ 240 pF 150 pF Cutoff Voltage VDS=–10V, I D=–1mA VDS=–10V, I D=–1A –1.5 1.2 –2.5 2 V S Input Capacitance Ciss ID=–1A, VGS=–4V VDS=–20V, f=1MHz Output Capacitance Coss VDS=–20V, f=1MHz Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time td(on) tr VDS=–20V, f=1MHz See specified Test Circuit 12 ns See specified Test Circuit 16 ns See specified Test Circuit 85 ns Fall Time td(off) tf See specified Test Circuit 55 Diode Forward Voltage VSD IS=–2A, VGS=0 Rise Time Turn-OFF Delay Time –1.0 ns –1.5 V · Marking:205 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/42895MO (KOTO) BX-1506 No.4917-1/3 FX205 No.4917-2/3 FX205 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.4917-3/3