SEME 2N2223A LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR IN TO77 HERMETIC PACKAGE 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) FEATURES 12.7 (0.500) Min. 1.02 (0.040) Max. • Silicon Planar Epitaxial NPN Transistor • High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 3 5 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO77 METAL PACKAGE PIN 1 – Collector PIN 2 – Base PIN 3 – Emitter PIN 4 – Emitter PIN 5 – Base PIN 6 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCER VCBO VEBO IC TJ , Tstg Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current Operating and Storage Junction Temperature Range PD Total Device Dissipation PD Total Device Dissipation Semelab plc. @ TA = 25°C Derate above 25°C @ TC = 25°C Derate above 25°C Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 60V 80V 100V 7V 500mA –65 to +200°C Per Side Total Device 0.5W 0.6W 2.86mW/°C 3.43mW/°C 1.6W 3.0W 9.1mW/°C 11.4mW/°C Prelim. 5/98 SEME 2N2223A LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter VCER(sus)* Test Conditions OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = 100mA Min. Typ. Max. Unit RBE £ 10W 80 V VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 30mA IB = 0 60 V V(BR)CBO Collector – Base Breakdown Voltage IC = 100mA IE = 0 100 V V(BR)EBO Emitter – Base Breakdown Voltage IE = 100mA IC = 0 7 V ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VCB = 80V 0.01 mA IE = 0 TA = 150°C 15 VBE = 5V IC = 0 10 nA IC = 10mA VCE = 5V 15 IC = 100mA VCE = 5V 25 150 — IC = 10mA VCE = 5V 50 200 ON CHARACTERISTICS DC Current Gain hFE VCE(sat) Collector – Emitter Saturation Voltage IC = 50mA IB = 5mA 1.2 VBE(sat) Base – Emitter Saturation Voltage IC = 50mA IB = 5mA 0.9 IC = 50mA VCE = 10V V SMALL SIGNAL CHARACTERISTICS fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hib Input Impedance hfe Small Signal Current Gain IC = 1mA hoe Output Admittance f = 1kHz hFE1/hFE2 MATCHING CHARACTERISTICS DC Current Gain Ratio 1 IC = 100mA VCE = 5V f = 20MHz IE = 0 MHz VCB = 10V 15 pF 85 pF 20 30 W 40 200 — .05 mmhos 1.0 — f = 1MHz IC = 0 VBE = 0.5V f = 1MHz IC = 1mA VCB = 5V f = 1kHz VCE = 5V ½VBE1-VBE2½ Base – Emitter Voltage Differential IC = 100mA VCE = 5V D(VBE1-VBE2) Base – Emitter Voltage Differential IC = 100mA VCE = 5V Change Due To Temperature TA = –55 to +125°C DT 50 0.9 5.0 mV 25 mV/°C * Pulse Test: tp £ 300ms, d £ 2%. 1) The lowest hFE reading is taken as hFE1 for this ratio. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/98