SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.004) • CECC SCREENING OPTIONS A 0.31 rad. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) A= 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) APPLICATIONS: SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector Hermetically sealed surface mount version of the popular 2N2484 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 60V VEBO Emitter – Base Voltage 6V IC Collector Current PD Total Device Dissipation 50mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Semelab plc. Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 360mW 2.06mW / °C 1.2W 6.85mW / °C –65 to +200°C Prelim. 7/95 SEME 2N2484CSM LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CBO* Collector – Base Breakdown Voltage IC = 10µA IE = 0 60 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 60 V(BR)EBO Emitter – Base Breakdown Voltage IE = 10µA IC = 0 6 ICBO Collector Cut-off Current VCB = 45V IE = 0 10 IEBO Emitter Cut-off Current VBE = 5V IC = 0 10 VCE(sat) Collector – Emitter Saturation Voltage IC = 1mA IB = 0.1mA VBE(on) Base – Emitter On Voltage IC = 0.1mA VCE = 5V 0.5 IC = 1µA VCE = 5V 30 IC = 10µA VCE = 5V 100 IC = 100µA VCE = 5V 175 IC = 500µA VCE = 5V 200 IC = 1mA VCE = 5V 250 IC = 10mA VCE = 5V f = 5MHz IC = 0.05mA 15 f = 30MHz IC = 0.5mA 60 VCB = 5V IE = 0 hFE DC Current Gain fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hie Input Impedance VCE = 5V hre Voltage Feedback Ratio IC = 1mA hfe Small Signal Current Gain f = 1kHz nA 0.35 0.7 V 500 — 800 f = 140kHz VBE = 0.5V V IC = 0 f = 140kHz 3.5 150 MHz 6 pF 6 pF 24 kΩ 800 x 10-6 900 — * Pulse Test: tp ≤ 300µs, δ ≤ 2%. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95