SHINDENGEN Schottky Rectifiers (SBD) SBD Bridges OUTLINE DIMENSIONS D10SBS4 Case : 3S (Unit : mm) 40V 10A FEATURES ● Thin Single In-Line Package ● SBD Bridge ● Low VF APPLICATION ● Switching power supply ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load With heatsink Tc=67℃ Peak Surge Forward Current Repetitive Peak Surge Reverse Power Dielectric Strength Mounting Torque IFSM PRRSM Vdis TOR 50Hz sine wave, R-load Without heatsink Ta=25℃ 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 ℃ Pulse width 10μs, Rating of per diode, Tj=25℃ Terminals to case, AC 1 minute （Recommended torque：0.5N･m） ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions VF I F=5A, Forward Voltage Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode θjc junction to case With heatsink Thermal Resistance θjl junction to lead Without heatsink θja junction to ambient Without heatsink Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings Unit -55∼150 ℃ 150 ℃ 40 V 45 V 10 A 3.4 100 A 330 W 2 kV 0.8 N･m Ratings Unit Max.0.55 V Max.3.5 mA TYP 180 pF Max.5.5 Max.6 ℃/W Max.30 D10SBS4 Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 D10SBS4 f=1MHz Tc=25°C TYP per diode D10SBS4 Reverse Current 1000 Tc=150°C [MAX] Reverse Current IR [mA] 100 Tc=150°C [TYP] Tc=125°C [TYP] 10 Tc=100°C [TYP] 1 Tc=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 D10SBS4 Reverse Power Dissipation Reverse Power Dissipation PR [W] 20 DC D=0.05 0.1 15 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T D10SBS4 Forward Power Dissipation 20 Forward Power Dissipation PF [W] D=0.8 15 SIN DC 0.5 0.3 0.2 0.05 0.1 10 5 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T D10SBS4 Derating Curve Average Rectified Forward Current IO [A] 20 DC 15 D=0.8 0.5 SIN 10 0.3 0.2 0.1 5 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T D10SBS4 Derating Curve Average Rectified Forward Current IO [A] 6 DC 5 D=0.8 4 SIN 0.5 3 0.3 2 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T D10SBS4 Peak Surge Forward Capability IFSM 150 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP