SHINDENGEN Schottky Rectifiers (SBD) Dual OUTLINE DIMENSIONS DF10SC4M Case : STO-220 Unit : mm 40V 10A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, With heatsink, Tc=125℃ Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM 50Hz sine wave, R-load, Rating for each diode Io/2, On Al-Cu substrate, Ta=33℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Rating of per diode, Tj=25℃ ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions VF Forward Voltage IF=5A, Pulse measurement, Rating of per diode IR Reverse Current V R=VRM, Pulse measurement, Rating of per diode Cj f=1MHz, VR=10V, Rating of per diode Junction Capacitance Thermal Resistance θjc junction to case θja junction to ambient, On Al-Cu substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40∼150 150 40 45 10 6.8 100 330 Unit ℃ ℃ V V A Ratings Max.0.55 Max.3.5 Typ.180 Max.3 Max.25 Unit V mA pF ℃/W A W DF10SC4M Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 DF10SC4M f=1MHz Tc=25°C TYP per diode DF10SC4M Reverse Current 1000 Tc=150°C [MAX] Reverse Current IR [mA] 100 Tc=150°C [TYP] Tc=125°C [TYP] 10 Tc=100°C [TYP] 1 Tc=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 DF10SC4M Reverse Power Dissipation Reverse Power Dissipation PR [W] 20 DC D=0.05 0.1 15 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DF10SC4M Forward Power Dissipation 10 Forward Power Dissipation PF [W] DC D=0.8 8 SIN 0.5 0.3 0.2 6 0.05 0.1 4 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DF10SC4M Derating Curve Average Rectified Forward Current IO [A] 20 DC 15 D=0.8 0.5 SIN 10 0.3 0.2 0.1 5 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T DF10SC4M Derating Curve Average Rectified Forward Current IO [A] 12 DC 10 D=0.8 8 0.5 SIN 0.3 6 0.2 4 0.1 0.05 2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 15V IO 0 0 VR tp D=tp /T T DF10SC4M Peak Surge Forward Capability IFSM 200 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP