SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS DE3S6M Case : E-pack Unit : mm 60V 3A FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche ● guaranteed High current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tｃ=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=31℃ On alumina substrate Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM ●Electrical Characteristics (If not specified Item Symbol Forward Voltage VF IR Reverse Current Junction Capacitance Cj Thermal Resistance θjc θja 50Hz sine wave, R-load Tc=117℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Tj=25℃ Ratings -40∼150 150 60 65 2.5 3 80 330 Unit ℃ ℃ V V A Ratings Max.0.58 Max.2.5 Typ.130 Max.12 Max.55 Unit V mA pF ℃/W A W Tｃ=25℃) Conditions IF =3A, Pulse measurement V R=VRM, Pulse measurement f=1MHz, V R=10V junction to case junction to ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd DE3S6M Forward Voltage Forward Current IF [A] 10 1 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] Pulse measurement per diode 0.1 0 0.5 1 Forward Voltage VF [V] 1.5 2 Junction Capacitance Cj [pF] 10 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 DE3S6M f=1MHz Tc=25°C TYP per diode DE3S6M Reverse Current 1000 Tc=150°C [MAX] 100 Reverse Current IR [mA] Tc=150°C [TYP] Tc=125°C [TYP] 10 Tc=100°C [TYP] Tc=75°C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 DE3S6M Reverse Power Dissipation Reverse Power Dissipation PR [W] 10 8 DC D=0.05 0.1 6 0.2 0.3 4 0.5 2 0 SIN 0.8 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DE3S6M Forward Power Dissipation 4 Forward Power Dissipation PF [W] 3.5 3 DC D=0.8 2.5 0.3 SIN 0.5 0.2 2 0.05 1.5 0.1 1 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DE3S6M Derating Curve Average Rectified Forward Current IO [A] 6 5 DC D=0.8 4 0.5 SIN 3 0.3 0.2 2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 30V IO 0 0 VR tp D=tp /T T DE3S6M Derating Curve 5 Average Rectified Forward Current IO [A] Alumina substrate Alumina base DC 4 Soldering land (leads) 1.5mm × 2.5mm Soldering land (heatsink) 7mmφ Conductor layer 20µm Substrate thickness 0.64mm D=0.8 3 0.5 SIN 0.3 2 0.2 0.1 1 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 30V IO 0 0 VR tp D=tp /T T DE3S6M Peak Surge Forward Capability IFSM 150 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP