SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS D3FS6 Case : 2F Unit : mm 60V 3A RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Peake Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=25℃ On alumina substrate 50Hz sine wave, R-load Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM Tl=87℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ Pulse width 10μs, Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Forward Voltage IF=3A, Pulse measurement VF Reverse Current IR VR=VRM , Pulse measurement Junction Capacitance Cj f=1MHz, VR=10V θjl junction to lead Thermal Resistance θja junction to ambient On alumina substrate junction to ambient On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55∼150 150 60 65 1.65 3.0 80 330 Unit ℃ ℃ V V A Ratings Max.0.58 Max.2.5 Typ.130 Max.24 Max.90 Max.124 Unit V mA pF A W ℃/W D3FS6 Forward Voltage Forward Current IF [A] 10 Tl=150°C [MAX] Tl=150°C [TYP] Tl=25°C [MAX] Tl=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 10 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 D3FS6 f=1MHz Tl=25°C TYP D3FS6 Reverse Current 100 Tl=150°C [TYP] Tl=125°C [TYP] 10 Reverse Current IR [mA] Tl=100°C [TYP] Tl=75°C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 D3FS6 Reverse Power Dissipation Reverse Power Dissipation PR [W] 10 8 DC D=0.05 0.1 6 0.2 0.3 4 0.5 2 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T D3FS6 Forward Power Dissipation 1.4 Forward Power Dissipation PF [W] DC D=0.8 1.2 0.5 1 SIN 0.3 0.8 0.2 0.1 0.6 0.05 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T D3FS6 Derating Curve Average Rectified Forward Current IO [A] 3 DC 2.5 Alumina substrate Soldering land 2mmφ Conductor layer 20µm Substrate thickness 0.64mm D=0.8 2 SIN 0.5 1.5 1 0.3 0.2 0.5 0.1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 30V IO 0 0 VR tp D=tp /T T D3FS6 Derating Curve Average Rectified Forward Current IO [A] 6 5 DC D=0.8 4 0.5 SIN 3 0.3 0.2 2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Lead Temperature Tl [°C] VR = 30V IO 0 0 VR tp D=tp /T T D3FS6 Peak Surge Forward Capability IFSM 100 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 80 60 40 20 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP