SHINDENGEN Square In-line Package Bridge Diode S3WB60 OUTLINE DIMENSIONS Case : S3WB Unit : mm 600V 2.3A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current IO 50Hz sine wave, R-load, On glass-epoxy substrate, Ta=40℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ Current Squared Time I2t 1ms≦t＜10ms Ｔc=25℃ Ratings Unit -40～150 ℃ 150 ℃ 600 V 2.3 A 120 A 60 A2ｓ ● Electrical Characteristics (Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=2A, Pulse measurement, Rating of per diode Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Thermal Resistance θjl junction to lead θja junction to ambient Ratings Unit Max.1.05 V Max.10 μA Max.5.5 ℃/W Max.26.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S3WBx Forward Voltage 100 Forward Current IF [A] 10 Tl=150°C [TYP] Tl=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 S3WBx Forward Power Dissipation Forward Power Dissipation PF [W] 16 14 12 SIN 10 8 6 4 2 0 0 1 2 3 4 5 6 Average Rectified Forward Current IO [A] Tj= 150°C Sine wave 7 S3WBx Derating Curve Average Rectified Forward Current IO [A] 2.4 l 2 PCB Glass-epoxy substrate Solering land 5mmφ 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air 140 160 S3WBx IFSM Peak Surge Forward Capability 160 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 120 80 40 0 1 2 5 10 20 Number of Cycles [cycles] 50 100