SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS M1FH3 30V 1.5A RATINGS Absolute Maximum Ratings (Tc=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current IO 50Hz sine wave, R-load Tc=105 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Electrical Characteristics Item Forward Voltage Reverse Current Junction Capacitance Thermal Resistance Tc=25 Symbol VF1 VF2 IR Cj Æjc Æjl Æja Conditions IF=0.5A, Pulse measurement IF=1.5A, Pulse measurement VR=VRM, Pulse measurement f=1MHz, VR=10V junction to case junction to lead junction to ambient On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55`125 125 30 1.5 30 Unit V A A Ratings Max.0.30 Max.0.36 Max.1.0 Typ.80 Max.18 Max.20 Max.80 Unit V mA pF /W M1FH3 Forward Voltage 10 Forward Current IF [A] 5 2 Tc=125°C [MAX] Tc=125°C [TYP] Tc= 25°C [MAX] Tc= 25°C [TYP] 1 0.5 0.2 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage VF [V] 1 1.2 M1FH3 Forward Power Dissipation Forward Power Dissipation PF [W] 3 2.5 0.05 0.1 0.2 0.5 0.3 SIN D=0.8 DC 2 1.5 1 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 125°C IO 0 tp D=tp/T T Peak Surge Forward Capability M1FH3 IFSM 50 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycle] 50 100 M1FH3 Reverse Current 1000 Tc=125°C [TYP] Reverse Current IR [mA] 100 Tc=100°C [TYP] 10 Tc=75°C [TYP] Tc=50°C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 M1FH3 Reverse Power Dissipation Reverse Power Dissipation PR [W] 7 6 DC D=0.05 0.1 5 0.2 4 0.3 3 0.5 2 SIN 0.8 1 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 125°C 0 VR tp D=tp/T T M1FH3 Junction Capacitance 1000 f=1MHz Tc=25°C TYP Cj [pF] 500 Junction Capacitance 200 100 50 20 10 0.1 0.2 0.5 1 2 Reverse Voltage 5 VR [V] 10 20 30 M1FH3 Derating Curve Average Rectified Forward Current IO [A] 3 2.5 DC D=0.8 2 0.5 1.5 SIN 0.3 0.2 1 0.1 0.05 0.5 0 0 20 40 60 80 100 120 140 Case Temperature Tc [°C] VR = 15V IO 0 0 VR tp D=tp/T T M1FH3 Derating Curve Average Rectified Forward Current IO [A] 3 2.5 DC D=0.8 2 0.5 1.5 SIN 0.3 0.2 1 0.1 0.05 0.5 0 0 20 40 60 80 100 120 140 Lead Temperature Tl [°C] VR = 15V IO 0 0 VR tp D=tp/T T M1FH3 Transient Thermal Impedance 100 Transient Thermal Impedance Æjc,Æjl,Æja [°C/W] Æja Æjl Æjc 10 1 0.1 10-4 10-3 10-2 10-1 Time 100 t [s] 101 102 103 M1FH3 θja - Conductor pattern area 160 Glass-epoxy substrate Conductor layer 35um 140 θja [°C/W] 120 100 80 60 40 20 0 1 10 100 Conductor pattern area 1000 [mm2]