STANFORD SSW524

Product Description
Stanford Microdevices’ SSW-524 is a high performance
Gallium Arsenide Field Effect Transistor MMIC switch housed
in a low-cost surface-mountable 8-pin ceramic package.
Preliminary
Preliminary
SSW-524
DC-8 GHz GaAs MMIC
SPST Switch
This single-pole, single-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control
bias. P1db at -5V is +25dBm typical and can be increased to
+28dBm with -8V supply.
The die is fabricated using 0.5 micron FET process with gold
metallization and silicon nitride passivation to achieve
excellent performance and reliability.
Isolation vs. Frequency
VControl = -5 V
Product Features
• High Isolation : 40dB at 2GHz, 30dB at 8GHz
• Low DC Power Consumption
• Low Insertion Loss : 0.9dB at 2GHz
• Non-Reflective (50 Ohm termination) when
Isolated
-20
• Low Cost Surface-Mountable Ceramic Package
-30
Applications
• Analog/Digital Wireless Communications
• AMPS, PCS, DEC and GSM
dB -40
-50
-60
DC
1
2
3
4
GHz
5
6
7
8
Electrical Specifications at Ta = 25C
Sy mbol
Parameters & Test C onditions:
Zo = 50 ohms, VControl = -5V, Ta = 25oC
U nits
Min.
Ty p.
Max.
0.9
1.5
1.8
1.3
1.9
Ins
Inserti on Loss
f = 0.05-2.0 GHz
f = 2.0-6.0 GHz
f = 6.0-8.0 GHz
dB
dB
dB
Isol
Isolati on
f = 0.05-2.0 GHz
f = 2.0-6.0 GHz
f = 6.0-8.0 GHz
dB
dB
dB
VSWR on
Input & Output VSWR
(on or low loss state)
f = 0.05-2.0 GHz
f = 2.0-6.0 GHz
f = 6.0-8.0 GHz
1.3:1
1.5:1
1.7:1
VSWR off
Input & Output VSWR
(off or i solated state)
f = 0.05-2.0 GHz
f = 2.0-6.0 GHz
f = 6.0-8.0 GHz
1.3:1
1.5:1
1.7:1
P 1dB
Output Power at 1dB C ompressi on
at 2 GHz
V = -5V
V = -8V
dB m
dB m
+25
+28
TOIP
Thi rd Order Intercept Poi nt
V = -5V
V = -8V
dB m
dB m
+44
+47
uA
40
nsec
10
Id
Isw
D evi ce C urrent
Swi tchi ng Speed
10% to 90% or 90% to 10%
35
25
45
35
30
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-101286 Rev B
SSW-524 DC-8.0 GHz GaAs MMIC Switches
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
R F In p u t P o w e r
2 W M a x>5 0 0 M Hz
C o ntro l Vo lta g e
-10V
O p e r a t i n g Te m p e r a t u r e
-4 5 C to +8 5 C
S t o r a g e Te m p e r a t u r e
-6 5 C to +1 5 0 C
The rma l Re s i s ta nc e
2 0 d e g C /W
Insertion Loss vs. Frequency
VControl = -5 V
0 .0
-0 .5
dB
-1 .0
-1 .5
-2 .0
DC
1
2
3
4
5
6
7
8
7
8
GHz
On Port Input/Output VSWR vs. Frequency
VControl = -5 V
2 .0
1 .8
1 .6
dB
1 .4
1 .2
1 .0
DC
1
2
3
4
5
6
GHz
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101286 Rev B
Preliminary
Preliminary
SSW-524 DC-8.0 GHz GaAs MMIC Switches
Part Number Ordering Information
Caution ESD Sensitive:
Appropriate precautions in handling, packaging and
testing devices must be observed.
Part N umber
D ev ices Per R eel
R eel Siz e
SSW-524
500
7"
Truth Table
Switch Schematic
V1
V2
J1-J2
Switch shown in “Low Loss” state (V1=0, V2=Vcontrol)
0
V c o ntro l
Low Loss
V c o ntro l
0
Is o l a t i o n
VControl = -5 to -8
50 Ohms
Part Symbolization
The part will be symbolized with a “W5” designator
on the top surface of the package.
50 Ohms
Package Dimensions
.096 [2.44]
.015 [.38]
.050 [1.27]
.010 [.25]
7° MAX. TYP
.020 [.51] (8X)
.065 [1.65] (8X)
60°
.030 [.76] TYP(8X)
.010 [.25] REF
.065 [1.65] REF
Pin Out
P in
F u n c tio n
D e s c rip tio n
1
J1
RF i n
2
V1
C o ntro l 1
3
V2
C o ntro l 2
4
GND
Gro und
5
J2
RF o ut 1
6
GND
Gro und
7
GND
Gro und
8
GND
Gro und
.160 [4.06]
W5
.290 [7.37]
DOT MARK
DENOTES
PIN 1
LOCATION
.140 [3.56] REF
HEATSINK PLATE
45° MAX. TYP(8X)
.008 [.20] (8X)
.200 [5.08]
.036 [.91]
.010 [.25]
SEATING PLANE TO BE ±.002 FROM
HEATSINK PLATE BOTTOM.
.180 [4.57]
R.010 [.25] TYP
(4X)
.010 [.25]
.020 [.51]
.160 [4.06] REF
.140 [3.56]
.035 [.89] TYP
(4X)
HEATSINK PLATE
.200 [5.08] REF
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-101286 Rev B