Preliminary Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 1960 MHz 1 Watt Power Amp with Active Bias This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1950 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. VCC Active Bias VBIAS RFOUT/ VCC RFIN N/C Symbol f0 P 1dB Input Match U nits Min. Frequency of Operati on MHz 1930 Output Power at 1dB C ompressi on Vc1, Vbi as, Vc2 = 5.0V dB m 29.5 dB 12.0 - 1.5:1 dB m 48.0 mA 320 ºC /W 40 Small Si gnal Gai n S11 Input VSWR Icc Rth, j-l Applications • PCS Systems • Multi-Carrier Applications Parameters: Test C onditions: Z0 = 50 Ohms, VC C =5V, Temp = 27ºC S 21 OIP3 Product Features • On-chip Active Bias Control • Patented High Reliability GaAsHBT Technology • High Linearity Performance: +48dBm OIP3 Typ. • Surface-Mountable Plastic Package Output Thi rd Order Intercept Poi nt Power out per tone = +14 dBm D evi ce C urrent, VC C = 5V Thermal Resi stance (juncti on - lead) Typ. Max. 1990 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101428 Rev A Preliminary Preliminary SPA-1218 1950 MHz 1 Watt Power Amp. 1950 MHz Application Circuit Data, Icc=320 mA, T=+27C, VCC=5V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 16 32 30 14 26 dB dBm 28 24 25C 22 85C -40C 20 1.93 1.94 1.95 1.96 1.97 1.98 25C -40C 10 85C 8 1.93 1.99 dBm 40 35 25C 1.94 1.95 1.96 1.97 -40C 25 S12 1.98 85C 20 1.93 1.99 1.94 1.95 1.97 1.98 1.99 Device Current vs. Source Voltage 55 Device Current (mA) 50 45 40 35 25C -40C 85C 20 13 1.96 GHz Output Third Order Intercept vs. Tone Power, 1.96 GHz dBm 1.99 45 GHz 8 1.98 50 30 25 1.97 Output Third Order Intercept vs. Frequency (POUT per tone = 11dBm) S11 30 1.96 Input/Output Return Loss, Isolation vs Frequency S22 -35 -40 1.93 1.95 GHz 55 -5 -10 -15 -20 -25 -30 1.94 GHz 0 dB 12 18 23 400 350 300 250 200 150 100 50 0 -50 25C -40C 85C 0 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 1 2 3 4 5 VS (V) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101428 Rev A Preliminary Preliminary SPA-1218 1950 MHz 1 Watt Power Amp. Vcc 10uF, Tantalum 0.047uF 270pF 100nH, LL1608-FS 22pF 390Ω 1 8 2 7 3 6 4 5 22nH, LL1608-FS 68pF Z=50Ω, 23.6° 1.8 pF 1930-1990 MHz Schematic Vbias Vcc 10uF Tantalum 0.047uF 100nH LL1608-FS 270pF 390W 22nH LL1608-FS 22pF 68pF 1.8pF Vpc ECB-101161 Rev. B SOIC-8 PA Eval Board 1930-1990 MHz Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101428 Rev A Preliminary Preliminary SPA-1218 1950 MHz 1 Watt Power Amp. Pin # Function 1 VC C VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 2 V bi as Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration is shown in the Application Schematic. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 3 RF In 4 N/C Description Device Schematic 1 2 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. ACTIVE BIAS NETWORK 5-8 No connection 5 RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. 6 RF Out/Vcc Same as Pin 5 7 RF Out/Vcc Same as Pin 5 8 RF Out/Vcc Same as Pin 5 3 Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Value U nit Supply C urrent (ID) Parameter 750 mA D evi ce Voltage (VD) 6.0 V Power D i ssi pati on 4.0 W Operati ng Temperature (TOP) RF Input Power Storage Temperature Range Operati ng Juncti on Temperature (TJ) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 -40 to +85 ºC +500 mW -40 to +150 ºC +150 ºC http://www.stanfordmicro.com EDS-101428 Rev A Preliminary Preliminary SPA-1218 1950 MHz 1 Watt Power Amp. Part Number Ordering Information Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Devices Per Reel Reel Siz e SPA-1218 500 7" Package Outline Drawing .035 [.889] .045 [1.143] 3 4 .194 [4.93] 1 2 XXXX SPA 1218 8 7 EXPOSED PAD .078 [1.969] .155 [3.937] .236 [5.994] .061 [1.549] 5 6 TOP VIEW BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .058 [1.473] .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW END VIEW Recommended Land Pattern PARTING LINE .15 [3.81] .025 5° .24 [6.22] .16 [4.02] .33 [8.42] DETAIL A Note: XXXX represents the lot code .11 [2.71] .05 [1.27] .02 [.60] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101428 Rev A