1 TC4626 TC4627 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER 2 FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ The TC4626/4627 are single CMOS high speed drivers with an on-board voltage boost circuit. These parts work with an input supply voltage from 4 to 6 volts. The internal voltage booster will produce a VBOOST potential up to 12 volts above VIN. This VBOOST is not regulated, so its voltage is dependent on the input VDD voltage and output drive loading requirements. An internal undervoltage lockout circuit keeps the output in a low state when VBOOST drops below 7.8 volts. Output is enabled when VBOOST is above 11.3 volts. Power driver with on Board Voltage Booster Low IDD ......................................................... < 4 mA Small Package ........................................ 8-Pin PDIP Under-Voltage Circuitry Fast Rise-Fall Time .................. < 40nsec @ 1000pF Below-Rail Input Protection APPLICATIONS ■ ■ Raises 5V to drive higher-Vgs (ON) MOSFETs Eliminates one system power supply 3 ORDERING INFORMATION PIN CONFIGURATIONS 16-Pin SOIC (Wide) 8-Pin Plastic DIP /CerDIP C1– 1 8 VDD C1+ 2 7 IN C2 3 GND 4 TC4626 TC4627 6 VBOOST 5 OUT Part No. Package Temp. Range TC4626COE 16-Pin SOIC (Wide) TC4626CPA 8-Pin Plastic DIP – 40°C to +85°C – 40°C to +85°C – 55°C to +125°C 1 16 VDD TC4626EOE 16-Pin SOIC (Wide) 2 15 NC TC4626EPA 8-Pin Plastic DIP – 0°C to +70°C C1+ 3 14 NC TC4626MJA 8-Pin CerDIP – 0°C to +70°C NC 4 13 IN C2 5 TC4627COE 16-Pin SOIC (Wide) TC4627CPA 8-Pin Plastic DIP – 40°C to +85°C 10 NC TC4627EOE 16-Pin SOIC (Wide) – 40°C to +85°C 9 OUT TC4627EPA 8-Pin Plastic DIP – 0°C to +70°C TC4627MJA 8-Pin CerDIP – 0°C to +70°C C1– NC NC TC4626 TC4627 11 VBOOST 6 NC 7 GND 12 NC 8 – 55°C to +125°C 4 5 FUNCTIONAL BLOCK DIAGRAM EXT + C1 C1+ EXT + C2 C2 C1- 2 VBOOST (UNREGULATED 3 x VDD) 1 3 V = 2 x VDD 6 6 EXT + C3 VOLTAGE BOOSTER UV LOCK NONINVERTING 4627 5 VDD IN GND 8 7 OUTPUT CLOCK 7 INVERTING 4626 4 8 NOTE: Pin numbers correspond to 8-pin package TC4626/7-7 10/21/96 TELCOM SEMICONDUCTOR, INC. 4-271 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 ABSOLUTE MAXIMUM RATINGS Package Power Dissipation (TA ≤ 70°C) PDIP .................................................................730mW CerDIP .............................................................. 800mW SOIC .................................................................760mW Derating Factor PDIP ....................................... 5.6 mW/°C Above 36°C CerDIP ........................................................ 6.0 mW/°C Supply Voltage ...........................................................6.2V Input Voltage, Any Terminal ...... VS + 0.3V to GND – 0.3V Operating Temperature : M Version ...... – 55°C to +125°C E Version ......... – 40°C to +85°C C Version .............. 0°C to +70°C Maximum Chip Temperature ................................. +150°C Storage Temperature ............................ – 65°C to +150°C Lead Temperature (10 sec) ................................... +300°C ELECTRICAL CHARACTERISTICS: TA = 25°C VDD = 5V C1 = C2 = C3 10µF unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 0V ≤ VIN ≤ VDRIVE 2.4 — –1 — — — — 0.8 1 V V µA VBOOST – 0.025 — — — — — — 10 8 1.5 — 0.025 15 10 — V V Ω Ω A Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1 VDD = 5V, VBOOST > 8.5V — — — — 1.0 33 27 35 45 — 40 35 45 55 — nsec nsec nsec nsec MHz IL = 10 mA, VDD = 5V — 300 400 Ω — 120 200 Ω 12 4.5 — — 28 10 kHz V 7.0 7.8 8.5 V 10.5 11.3 12 V Driver Input VIH VIL IIN Logic 1, Input Voltage Logic 0, Input Voltage Input Current Driver Output VOH VOL RO RO IPK High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current IOUT = 10 mA, VDD = 5V IOUT = 10 mA, VDD = 5V Switching Time tR tF tD1 tD2 FMAX Rise Time Fall Time Delay Time Delay Time Maximum Switching Frequency Voltage Booster R3 R2 FOSC VOSC UV @ VBOOST VSTART @ VBOOST VBOOST Voltage Tripler Output Source Resistance Voltage Doubler Output Source Resistance Oscillator Frequency Oscillator Amplitude Measured at C1Undervoltage Threshold RLOAD = 10kΩ Start Up Voltage @VDD = 5V No Load 14.6 — — V Power Supply Current Supply Voltage VIN = LOW or HIGH — 4.0 — — 2.5 6.0 mA V Power Supply IDD VDD 4-272 TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER 1 TC4626 TC4627 ELECTRICAL CHARACTERISTICS: TA = Over Operating Temperature Range VDD = 5V C1 = C2 = C3 10µF unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 0V ≤ VIN ≤ VBOOST 2.4 — – 10 — — — — 0.8 10 V V µA VDRIVE – 0.025 — — — — 0.025 V V — — 15 15 20 25 Ω — — — 10 10 1.5 13 15 — Ω — — — — 750 — — — — — 55 50 60 70 — nsec nsec nsec nsec kHz — 400 500 Ω — 170 300 Ω 5 4.5 — — 50 10 kHz V 7.0 7.8 8.5 V 10.5 11.3 12 V 2 Driver Input VIH VIL IIN Logic 1, Input Voltage Logic 0, Input Voltage Input Current Driver Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance, High RO Output Resistance, Low IPK IOUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) IOUT = 10 mA, VDD = 5V C & E Version (TA = 70°C or 85°C) M Version (TA = 125°C) Peak Output Current A 3 4 Switching Time tR tF tD1 tD2 FMAX Rise Time Fall Time Delay Time Delay Time Maximum Switching Frequency Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1,2 Test Figure 1 VDD = 5V, VBOOST > 8.5V 5 Voltage Booster R3 R2 FOSC VOSC UV @ VBOOST VSTART @ VBOOST VBOOST Voltage Boost Output Source Resistance Voltage Doubler Output Source Resistance Oscillator Frequency Oscillator Amplitude Measured at C1Undervoltage Threshold IL = 10 mA, VDD = 5V RLOAD = 10kΩ Start Up Voltage @VDD = 5V No Load 14.6 — — V Power Supply Current Supply Voltage VIN = LOW or HIGH — 4.0 — — 4 6.0 mA V Power Supply IDD VDD 6 7 8 TELCOM SEMICONDUCTOR, INC. 4-273 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 SWITCHING TIME TEST CIRCUITS VBOOST VBOOST 0.1 µF Ceramic C3 10 µF 6 INPUT 7 2 C1 INPUT OUTPUT CL = 1000 pF C1+ C1 10 µF 10 µF 1 3 C2 10 µF C1- C2 7 2 1 TC4626 8 3 VDD = 5V C2 10 µF 4 +5V 10 µF 6 5 0.1µF Ceramic C3 90% 5 OUTPUT CL = 1000 pF C1+ C1- C2 TC4627 8 VDD = 5V 4 +5V 90% INPUT* INPUT* 0V VBOOST 10% tD1 tF tD2 0V tR 10% * 100kHz SQUARE WAVE, tr = tf < 10nsec Figure 1. Inverting Driver Switching Time 4-274 tD1 90% tR OUTPUT OUTPUT 0V VBOOST 90% 90% 10% 10% 0V 10% 90% tD2 tF 10% * 100kHz SQUARE WAVE, tr = tf < 10nsec Figure 2. Non-Inverting Driver Switching Time TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER 1 TC4626 TC4627 BOOSTER FUNCTION The voltage booster is an unregulated voltage tripler circuit. The tripler consists of three sets of internal switches and three external capacitors. S1a and S1b charge capacitor C1 to VDD potential. S2a and S2b add C1 potential to VDD input to charge C2 to 2 x VDD. S3a and S3b add C1 potential to C2 to charge C3 to 3 x VDD. The position of the switches is controlled by the internal 4 phase clock. 2 Pin 1 & 2 Waveforms 3 x VDD PIN 2 VOLTAGE 2 x VDD VDD 3 2 x VDD 6 PIN 1 VOLTAGE 3 x VDD, VBOOST VDD 6 C3 0 S3a 2 x VDD 3 S2a C2 (4 To 6V) VDD S3b 4 8 S1a S2b 2 ON S1 OFF C1 S2 1 ON OFF S1b 5 GND 4 S3 ON OFF Voltage Booster Position of Switches 6 7 8 TELCOM SEMICONDUCTOR, INC. 4-275 POWER CMOS DRIVERS WITH VOLTAGE TRIPLER TC4626 TC4627 TYPICAL CHARACTERISTICS TC4626 VOH vs. Frequency VS = 5V, Temperature = –55°C 16 14 470pF 14 12 12 470pF 10 VOUT Hi (Volts) VOUT Hi (Volts) TC4626 VOH vs. Frequency VS = 5V, Temperature = 25°C 10 2200pF 8 1000pF 6 4 8 6 2200pF 2 2 0 0 5 10 500 1,000 1,500 2,000 2,500 3,000 3,500 500 1,000 1,500 2,000 2,500 3,000 3,500 FREQUENCY (kHz) FREQUENCY (kHz) TC4626 VOH vs. Frequency VS = 5V, Temperature = 125°C 14 100 12 10 Time (nsec) VOUT Hi (Volts) 80 470pF 8 6 60 40 2200pF 1000pF 4 Delay Time vs. Temperature VS = 4V, CLOAD = 1000pF Input = 0-5V; TR & TF <10nsec; @ <20 kHz TD2 TD1 TR 20 2 0 5 TF 0 500 1,000 1,500 2,000 2,500 3,000 3,500 -40 -20 Delay Time vs. Temperature VS = 5V, CLOAD= 1000 pF 60 80 100 120 40 Time (nsec) Time (nsec) 40 50 50 TD2 TD1 30 TR 20 20 Delay Time vs. Temperature VS = 6V, CLOAD= 1000 pF 60 40 0 TEMPERATURE (°C) FREQUENCY (kHz) 30 Input = 0-5V; TR & TF <10nsec; @ <20 kHz 0 TD2 TD1 20 TF 10 TR TF Input = 0-5V; TR & TF <10nsec; @ <20 kHz 10 0 -40 -20 0 20 40 60 TEMPERATURE (°C) 4-276 1000pF 4 80 100 120 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (°C) TELCOM SEMICONDUCTOR, INC. POWER CMOS DRIVERS WITH VOLTAGE TRIPLER 1 TC4626 TC4627 TYPICAL CHARACTERISTICS (Cont.) 16 15 15 14 14 VOUT HI (Volts) VOUT HI (Volts) 16 13 12 470 pF 11 1,000 pF 10 9 2 TC4626 VOH vs. Frequency VS = 5V, Temperature = -55°C TC4626 VOH vs. Frequency VS = 5V, Temperature = 25°C 470 pF 13 12 3 1,000 pF 11 2,200 pF 10 9 2,200 pF 8 8 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 4 FREQUENCY x 100 kHz FREQUENCY x 100 kHz TC4626 VOH vs. Frequency VS = 5V, Temperature = 125°C 16 15 VOUT HI (Volts) 14 5 13 12 11 470 pF 10 1,000 pF 9 2,200 pF 8 0 1 2 3 4 5 6 7 8 9 6 10 FREQUENCY x 100 kHz 7 8 TELCOM SEMICONDUCTOR, INC. 4-277