Product Data Sheet Gain Block Amplifier TGA8320-SCC Key Features and Performance • • • • • • DC to 8 GHz Frequency Range (L, S, and C-band) 9.5 dB Gain 1.3:1 Input/Output SWR 17 dBm Output Power at 1 dB Gain Compression Typical Noise Figure is 5 dB 1.066 x 1.219 x 0.152 mm (0.042 x 0.048 x 0.006 in.) Description The TriQuint TGA8320-SCC is a general purpose gain block amplifier, which operates from DC to 8 GHz. Four 200 um FETs produce 9.5 dB nominal gain and a noise figure that is 5 dB across the band. Typical input and output return loss is 16 dB at midband. Nominal power output is 17 dBm at 1 dB gain compression. Ground is provided to the circuitry through vias to the backside metallization. The TGA8320-SCC gain block amplifier is suitable for a variety of military and commercial applications such as L, S, and C-band radar systems, ECM, and communication systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire-bonding processes. The TGA8320-SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGS8320-SCC TYPICAL S-PARAMETERS S 21 S 11 Frequency S 12 S 22 GAIN (GHz) MAG ANG (°) MAG ANG (°) MAG ANG (°) MAG ANG (°) (dB) 0 .5 0 .0 5 - 79 3 .1 8 166 0 .0 0 1 111 0 .0 4 52 1 0 .1 1 .0 0 .0 6 - 113 3 .1 1 155 0 .0 0 1 109 0 .0 7 59 9 .8 1 .5 0 .0 8 - 132 3 .0 7 144 0 .0 0 1 127 0 .0 9 59 9 .7 2 .0 0 .1 0 - 146 3 .0 3 133 0 .0 0 2 129 0 .1 1 55 9 .6 2 .5 0 .1 2 - 159 2 .9 9 122 0 .0 0 3 135 0 .1 3 50 9 .5 3 .0 0 .1 3 - 171 2 .9 6 112 0 .0 0 3 133 0 .1 4 43 9 .4 3 .5 0 .1 5 - 180 2 .9 3 101 0 .0 0 4 149 0 .1 5 37 9 .3 4 .0 0 .1 6 173 2 .9 1 90 0 .0 0 7 145 0 .1 6 26 9 .3 4 .5 0 .1 6 168 2 .9 1 79 0 .0 0 9 143 0 .1 5 12 9 .3 5 .0 0 .1 6 166 2 .8 9 68 0 .0 1 2 135 0 .1 5 -3 9 .2 5 .5 0 .1 8 166 2 .8 6 57 0 .0 1 9 131 0 .1 4 - 19 9 .1 6 .0 0 .1 8 149 2 .8 3 47 0 .0 1 8 107 0. 13 - 39 9 .0 6 .5 0 .1 2 148 2 .8 6 36 0 .0 1 7 105 0 .1 5 - 70 9 .1 7 .0 0 .0 9 164 2 .8 3 24 0 .0 1 8 104 0 .1 7 - 99 9 .0 7 .5 0 .0 9 - 164 2 .8 0 12 0 .0 2 0 101 0 .2 1 - 124 8 .9 8 .0 0 .1 3 - 150 2 .7 3 0 0 .0 2 2 95 0 .2 6 - 144 8 .7 TA = 25oC, V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA Reference planes for S-parameter data include bond wires as specified in the “Recommended Assembly Diagram”. The S-parameters are also available on floppy disk and the world wide web. RF CHARACTERISTICS TYP UNIT GP Sm all- s ig n al p o wer g ain P ARAMETER TES T CONDITIONS f = DC t o 8 GHz 9 .5 dB SWR(in ) In p u t s t an d in g wave rat io f = DC t o 8 GHz 1 .3 :1 - f = DC t o 8 GHz f = DC t o 8 GHz 1 .3 :1 17 d Bm SWR(o u t ) Ou t p u t s t an d in g wave rat io P1 d B Ou t p u t p o wer at 1 –d B g ain co m p res s io n NF IP 3 IP 2 No is e fig u re f = DC t o 8 GHz 5 dB Ou t p u t t h ird –o rd er in t ercep t p o in t f = 2 GHz f = 4 GHz 30 31 d Bm Ou t p u t s eco n d –o rd er in t ercep t p o in t f = 8 GHz f = 2 GHz 28 33 d Bm Ou t p u t t h ird h arm o n ic at 1 –d B g ain co m p res s io n f = 4 GHz f o = 2 GHz 39 - 2 3 .5 d Bc* f o = 4 GHz - 32 f o = 2 GHz - 19 f o = 4 GHz - 25 Ou t p u t s eco n d h arm o n ic at 1 –d B g a in co m p res s io n d Bc* V+ = 12 V, VG2 = 1.5 V, I+ = 70 mA, TA = 25oC *Unit dBc applies to decibels with respect to the carrier or fundamental frequency, fo. THERMAL INFORMATION P ARAMETER RΘ JC Th erm al res is t an ce, ch an n el t o b ack s id e TriQuint Semiconductor Texas : (972)994 8465 TES T CONDITION NOM UNIT V = 1 2 V, V G2 = 1 .5 V, I = 7 0 m A 27 °C/ W + + Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGS8320-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 5 Product Data Sheet TGS8320-SCC Refer to TriQuint Gallium Arsenide Products Designers’ Information on TriQuint’s web site. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 6 Product Data Sheet TGS8320-SCC GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 7