isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630N DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9.3 A PD Total Dissipation@TC=25℃ 82 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.83 ℃/W 62 ℃/W isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630N ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance IGSS MIN MAX 200 V 4 V VGS=10V; ID=5.4A 0.3 Ω Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 25 uA VSD Diode Forward Voltage IF= 5.4A; VGS=0 1.3 V isc Website：www.iscsemi.cn 2 UNIT