T-1 PACKAGE NPN PHOTOTRANSISTOR MID-30422 Package Dimensions Description The MID-30422 is a NPN silicon phototransistor moun- Unit: mm (inches ) nted in a lensed , clear transparent plastic package. The ψ3.00 (.118) lensing effect of the package allows an acceptance half 4.00 (.157) view angle of 10° that is measured from the optical axis 5.25 (.207) to the half power point . 1.00 (.040) 0.80±0.50 (.032±.020) FLAT DENOTES COLLECTOR 23.40MIN (.920) Features l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Acceptance view angle : 20o 0.50 TYP (.020) 1.00MIN (.040) 2.54 (.100) E C Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 1.5 mm (.059") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-30422 Optical-Electrical Characteristics Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Test Conditions Ic=0.1mA Ee=0 IE=0.1mA Ee=0 Ic=0.5mA Symbol V(BR)CEO Min. 30 V(BR)ECO 5 0.4 Ee=0.1mW/cm VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Tr Tf 100 IC(ON) 2.8 IC Normalized Collector Current 0.01 0.001 40 80 120 TA - Ambient Temperature - oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 80 40 0 6 8 10 Relative Sensitivity RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE Vce =5 V Ee =0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 4 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Relative Collector Current (mA) Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time µS mA Ee=0.1mW/cm 1 2 nA 2 0.1 0 µS ICEO 10 120 V 15 15 100 160 V VCE(SAT) 1000 200 Max. 2 Typical Optical-Electrical Characteristic Curves 0 Typ . @ TA=25oC Unit V 0° 10° 12 Vce = 5 V 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002 MID-30422/MID-30A22 . 100% 90% 80% Relative Spectral Sensitivity MID-30422 MID-30A22 70% 60% 50% 40% 30% 20% 10% 0% 600 700 800 Wavelength-nm 900 1000