UOT MID

T-1 PACKAGE
NPN PHOTOTRANSISTOR
Description
MID-30H22
Package Dimensions
The MID-30H22 is a NPN silicon phototransistor mou-
Unit : mm (inches )
nted in a lensed , special dark plastic package.The lens-
ψ3.00
(.118)
ing effect of the package allows an acceptance half view
4.00
(.157)
angle of 10° that is measured from the optical axis to the
5.25
(.207)
half power point .
1.00
(.040)
0.80±0.50
(.032±.020)
FLAT DENOTES COLLECTOR
23.40MIN
(.920)
0.50 TYP
(.020)
Features
1.00MIN
(.040)
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Good spectral matching to IRED (λp=850nm) type.
l
Acceptance view angle : 20o
2.54
(.100)
E
C
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 0.8 mm (.031") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-30H22
.
@ TA=25oC
Max.
Unit
V
Optical-Electrical Characteristics
Symbol
V(BR)CEO
Min.
30
V(BR)ECO
5
Iceo-Collector Dark Current -µA
Tr Tf Rise and Fall Time - µS
100
10
1
0.1
0.01
0.001
0
40
80
120
TA- Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
160
120
80
40
0
0
2
4
6
8
10
0.4
Tr
Tf
V
µS
15
15
ICEO
100
IC(ON)
nA
2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
mA
Vce = 5 V
Ee = 0.1
mW/cm2
λ
-75
-25
25
75
125
TA - Ambient Temperature - oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
10
Vce = 5 V
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
Relative Sensitivity
Relative Spectral Sensitivity
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
V
VCE(SAT)
Typical Optical-Electrical Characteristic Curves
1000
Typ .
IC Normalized Collector Current
Test Conditions
Ic=0.1mA
Ee=0
Ie=0.1mA
Ee=0
Ic=0.5mA
Ee=0.1mW/cm2
VCC =5V, RL=1KΩ
IC=1mA
VCE=10V
Ee=0
VCE=5V
Ee=0.1mW/cm2
Relative Collector Current
(mA)
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
600
700
800
900
1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
30°
40°
50°
60°
70
80°
90°
1.
0
0.
9
0.5 0.3 0.1
0.2 0.4 0.6
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002