NPN T-1 Standard Phototransistor LTR-4206/LTR-4206E Features Package Dimensions Wide range of collector currents. Lens for high sensitivity. Low cost plastic package. Description INFRARED PRODUCTS The LTR-4206 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10 measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-4206 series of infrared emitting diodes. The LTR-4206E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under flange is 1.5mm (.059") max. 4. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. Absolute Maximum Ratings at Ta=25 Maximum Rating Unit Power Dissipation Parameter 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temperature Range -40 to +85 Storage Temperature Range -55 to +100 Lead Soldering Temperature [1.6mm (.063 in.) from body] 260 for 5 Seconds Electrical Optical Characteristics at Ta=25 Parameter Symbol Part No. Min. Typ. Max. Unit Collector-Emitter Breakdown Voltage V(BR)CEO 30 V Emitter-Collector Breakdown Voltage V(BR)ECO 5 V Collector Emitter Saturation Voltage VCE(SAT) 0.4 V Rise Time Tr 10 S Fall Time Tf 15 S Collector Dark Current On State Collector Current I CEO IC(ON) 100 LTR-4206 1 4 LTR-4206E 1 2 nA mA Test Condition IC=1mA Ee=0mW/cm2 IE=100 A Ee=0mW/cm2 IC=100 A Ee=1mW/cm2 VCC=5V IC=1mA RL=1K VCE=10V Ee=0mW/cm2 VCE=5V Ee=1mW/cm2 =940nm 10-31 Typical Electrical/Optical Characteristic Curves (25 Ambient Temperature Unless Otherwise Noted) 10-32