T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-32422 Package Dimensions The MID-32422 is a NPN silicon phototransistor mou- Unit : mm (inches ) φ 3.50 ± 0.25 (.138 ± .010) nted in a lensed , water clear plastic package. The lens- φ 3.10 ± 0.20 (.122 ± .008) ing effect of the package allows an acceptance half view angle of 20° that is measured from the optical axis to 4.10 ± 0.20 (.161 ± .008) the half power point . 5.20 ± 0.30 (.205 ± .012) 4.00 (.157) SEE NOTE 2 24.00 MIN. (.945) 0.50 TYP. (.020) 1.00 MIN. (.040) Features l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Acceptance view angle : 40o 2.54 NOM. (.100) SEE NOTE 3 E C Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 1.5 mm (.059") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260 C for 5 seconds o Unity Opto Technology Co., Ltd. 02/04/2002 MID-32422 Optical-Electrical Characteristics Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA 10 1 0.1 0.01 0.001 120 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 80 40 0 0 2 4 6 8 V(BR)ECO 5 V 0.4 V 15 15 µS 100 0.8 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 nA mΑ Vce = 5 V Ee = 0.1 mW/cm2 @λ= 940 nm -75 -25 25 75 125 10 Vce = 5 8 6 4 2 0 10 0 RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE 0.1 0.2 0.3 0.4 0.5 0.6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0° Relative Sensitivity V TA - Ambient Temperature - oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE TA - Ambient Temperature - oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 120 30 Relative Collector Current (mA) Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS 100 160 V(BR)CEO IC(ON) 1000 200 Max. ICEO Typical Optical-Electrical Characteristic Curves 80 Typ . Tr Tf Ee=0.1mW/cm2 40 Min. VCE(SAT) 2 Ee=0.1mW/cm VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V 0 Symbol IC Normalized Collector Current Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current @ TA=25oC Unit 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002