SLOTTED PHOTOINTERRUPTER MIT-5A116-U Description Package Dimensions The MIT-5A116-U consists of a Gallium Arsenide 4 1 infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing . It is a transmissive subminiature photointerrupter. 3 2 14.00(.551) Dual - in - line socket mounting l Fast switching speed 0.50TYP 2.54 NOM 6.00 ± 0.10 (.236±.004) 2.54 9.00± 0.30 (.100) (.100) 1.00(.040) MIN (.406±.012) B-B' SECTION 2-φ 0.70± 0.10 2.35 ± 0.10 6.60± 0.10 (.038±.004) 0.70 (.027) 1.70 (.067) 0.90 (.035) (.260±.004) 1.50(.059) 6.00 (.236) (.028±004) (.205±.004) A-A' SECTION 5.20± 0.10 Choice of mounting configuration. 10.00(.394) 7.50 ± 0.30 (.295±.012) (.020) (.394) l A' 5.20(.205) For- direct pc board (.197±.008) 10.00MIN Non -contact switching (.020±.004) 2.50(.098) B' l l A 0.70(.028) Features l 0.50± 0.10 5.00± 0.20 B (.146±.008) 3.70± 0.20 0.50 ± 0.10 (.020±.004) NOTE 1. Tolerance is ± 0.25 mm (.006") unless otherwise noted. Absolute Maximum Ratings @TA =25oC Parameter Symbol IF Maximum Rating Unit 50 mA Reverse Voltage VR 5 V Power Dissipation Pad 75 mW Collector-emitter breakdown voltage V(BR)CEO 30 V OUTPUT Emitter-Collector breakdown voltage V(BR)ECO 5 V PC 75 100 mW Continuous Forward Current INPUT Collector power dissipation Total power dissipation PTOT mW o o Operating Temperature Range Topr -25 C to + 85 C Storage Temperature Range Tstg -40oC to + 100oC Unity Opto Technology Co., Ltd. 04/01/2002 MIT-5A116-U @TA =25oC Optical-Electrical Characteristics Parameter Input Output symbol VF Min. Typ. Max. Unit. Forward Voltage - 1.2 1.4 V Reverse Current IR - - 10 µA VR =5V - - 100 nA Vce =10V - - 0.4 V Ic (on) tr 0.4 - 4 mA Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V - 20 100 µS tf - 20 100 µS Collector Dark Current Iceo Collector Emitter Saturation Voltage VCE(SAT) Collector Current Transfer Cha- Response Time (RISE) racteristics Response Time (FALL) Test Conditions IF =20mA Ic=100µA, Vce =5V RL =1k, d =1mm 60 Power Dissipation (mW) Forward Current IF (mA) Typical Optical-Electrical Characteristic Curves 50 40 30 20 10 0 -25 0 25 50 75 120 100 PTOT 80 PD , PC 60 40 20 0 100 -25 Collector Current Ic (µA) Forward Current IF (mA) 100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 20mA 500 400 IF=15mA 300 10mA 200 4mA 100 0 0 2 4 6 8 10 12 Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Unity Opto Technology Co., Ltd. 50 75 100 Vce=2V 600 Ta=25oC 500 400 300 200 100 0 0 Relative Collector Current (%) Collector Current Ic (µA) 700 600 25 700 2.8 Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Ta=25oC 0 Ambient Temperature TA (oC ) Fig.2 Power Dissipation vs Ambient Temperature Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature 5 10 15 20 25 30 Forward Current IF (mA) Fig.4 Collector Current vs Forward Voltage 120 100 80 60 40 20 0 -25 0 25 50 75 100 Ambient Temperature TA ( oC ) Fig.6 Relative Collector Current VS. TA 04/01/2002 MIT-5A116-U 10-6 1000 VCE=20V Response Time (µs) Collector Dark Current ICEO Typical Optical-Electrical Characteristic Curves -7 10 10-8 10-9 25 50 75 Ambient Temperature TA (o C ) Fig.7 Collector Dark Current vs. Ambient Temperature 100 Ta=25 o C 4 10 1 0.1 1 10 100 Load Resistance Rt (KΩ) Fig.8 Response Time vs. Load Resistance 100 Relative Sensitivity (%) 100 0.1 0.01 10-10 0 V CE =2V I C =100mA Response Time Measurement Circuit Ta=25 oC 80 60 Input 40 t 90 % 10 % Output 20 t tr 0 700 800 900 1000 1100 Input 1200 Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) tf IL VCC VR Output Sensing Position Characteristics (Typical) Relative light current IL (%) X 100 Y I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 o C Ta=25 o C (Center of optical axis) 50 X Y 0 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) + + Distance d (mm) Unity Opto Technology Co., Ltd. 04/01/2002