SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - (Volts) -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr 0 -0.01 IC - Collector Current (Amps) -0.1 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds -1.4 100 80 -1.2 60 - (Volts) VCE=-10V 40 0 -0.0001 -0.001 -0.01 -0.1 - (Volts) V VEBO -5 V ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb = 25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB =-140V VCB =-140V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V IC=-100mA, VCE =-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 100 Output Capacitance Cobo -0.001 -0.01 -0.1 -1 Single Pulse Test at Tamb=25°C DC 1s 100ms 10ms 1ms 100µs 1V 10V 100V Safe Operating Area VBE(on) v IC Emitter-Base Voltage Peak Pulse Current IC=-100µA VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) V -0.6 0.001 0.1V -1 -150 CONDITIONS. 1 -0.1 VCEO V 0.01 -0.01 V Collector-Emitter Voltage UNIT 0.1 -0.001 UNIT -160 -160 10 -0.0001 VALUE VCBO MIN. VBE(sat) v IC -0.6 SYMBOL Collector-Base Voltage V(BR)CBO hFE v IC -0.8 PARAMETER SYMBOL IC - Collector Current (Amps) -1.0 SOT23 ABSOLUTE MAXIMUM RATINGS. Collector-Base Breakdown Voltage -0.0001 VCE=-10V B PARAMETER IC - Collector Current (Amps) -1.2 555 -0.8 1 -1.4 PARTMARKING DETAIL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 V 20 IC /IB =10 h - Normalised Gain (%) 600 ns 0 FMMT455 1000 td 0 COMPLEMENTARY TYPE ns ts 5 100 0 tf 1000V MAX IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 300 10 MHz IC=-50mA, VCE =-10V f=100MHz pF VCB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 132 E C IB1=IB2=IC/10 -0.8 IC /IB=10 FMMT555 ISSUE 3 JANUARY 1996 FEATURES * 150 Volt VCEO * 1 Amp continuous current 3 - 131 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - (Volts) -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr 0 -0.01 IC - Collector Current (Amps) -0.1 0 -1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds -1.4 100 80 -1.2 60 - (Volts) VCE=-10V 40 0 -0.0001 -0.001 -0.01 -0.1 - (Volts) V VEBO -5 V ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb = 25°C Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.1 -10 µA µA VCB =-140V VCB =-140V, Tamb=100°C Emitter Cut-Off Current IEBO -0.1 µA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1 V IC=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V IC=-100mA, VCE =-10V* Static Forward Current Transfer Ratio hFE 50 50 Transition Frequency fT 100 Output Capacitance Cobo -0.001 -0.01 -0.1 -1 Single Pulse Test at Tamb=25°C DC 1s 100ms 10ms 1ms 100µs 1V 10V 100V Safe Operating Area VBE(on) v IC Emitter-Base Voltage Peak Pulse Current IC=-100µA VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps) V -0.6 0.001 0.1V -1 -150 CONDITIONS. 1 -0.1 VCEO V 0.01 -0.01 V Collector-Emitter Voltage UNIT 0.1 -0.001 UNIT -160 -160 10 -0.0001 VALUE VCBO MIN. VBE(sat) v IC -0.6 SYMBOL Collector-Base Voltage V(BR)CBO hFE v IC -0.8 PARAMETER SYMBOL IC - Collector Current (Amps) -1.0 SOT23 ABSOLUTE MAXIMUM RATINGS. Collector-Base Breakdown Voltage -0.0001 VCE=-10V B PARAMETER IC - Collector Current (Amps) -1.2 555 -0.8 1 -1.4 PARTMARKING DETAIL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). -1.0 V 20 IC /IB =10 h - Normalised Gain (%) 600 ns 0 FMMT455 1000 td 0 COMPLEMENTARY TYPE ns ts 5 100 0 tf 1000V MAX IC=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* 300 10 MHz IC=-50mA, VCE =-10V f=100MHz pF VCB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 132 E C IB1=IB2=IC/10 -0.8 IC /IB=10 FMMT555 ISSUE 3 JANUARY 1996 FEATURES * 150 Volt VCEO * 1 Amp continuous current 3 - 131